摘要:
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.
摘要:
The present invention is to provide a trifluoro-substituted benzoic acid, an ester thereof, particularly 2,3,4-trifluoro-5-iodobenzoic acid, 2,3,4-trifluoro-5-trifluoromethylbenzoic acid, esters thereof, which are useful as a starting material for synthesizing a quinolonecarboxylic acid compound useful as a medicine, an anti-bacterial agent or an antiviral agent, and processes for preparing these compounds and 2,4,5-trifluoro-3-iodobenzoic acid, 2,4,5-trifluoro-3-trifluoromethylbenzoic acid and esters thereof.
摘要:
The present invention provides a spacer for a liquid crystal display which is excellent in light shielding properties, does not suffer from fading even after the lapse of a long period, thus being excellent in long-term reliability, and has satisfactory strengths and a liquid crystal display made by using the spacer. The above spacer is composed of colored fine particles prepared by copolymerizing a polymerizable anthraquinone dye having at least one ethylenically unsaturated bond in the molecule with an ethylenically unsaturated monomer component in an aqueous medium.
摘要:
A resin composition comprising an epoxy group-containing cycloolefin resin and a crosslinking agent is provided. More specifically, a resin composition comprising an epoxy group-containing thermoplastic norbornene resin obtained by introducing epoxy groups into a thermoplastic norbornene resin, and as the crosslinking agent, a curing agent for epoxy resins or a photoreactive substance is provided. The resin composition is suitable for use as an insulating material.
摘要:
A pattern-forming method using an electroconductive composition comprising at least one TCNQ complex salt selected from the group consisting of isoquinolinium-TCNQ complex salts, quinolinium-TCNQ complex salts, alkyl pyridinium-TCNQ complex salts, and morpholinium-TCNQ complex salts, a specific polymer, and a solvent are disclosed. This composition gives an electroconductive film having a superior long-term storage stability and electroconductive characteristics.When this electroconductive composition is coated on a resist to form an electroconductive film, and a pattern is formed by an irradiation with charging beams, such as electron beams, an accumulation of charges (charge-up) is prevented and a fine resist pattern in which a misregistration is completely prevented is obtained.
摘要:
A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.
摘要:
A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.
摘要:
Provided is a method for producing a polishing composition capable of reducing scratches and particles of an object to be polished, after polishing. It is a method for producing a polishing composition including a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm, wherein the filtration filter includes diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule.
摘要:
A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.
摘要:
A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less.