公开(公告)号：US08455302B2

公开(公告)日：2013-06-04

申请号：US13558540

申请日：2012-07-26

申请人： Goji Shiga ,  Naohide Takamoto ,  Fumiteru Asai

发明人： Goji Shiga ,  Naohide Takamoto ,  Fumiteru Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3164 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T428/24959 ,  Y10T428/265 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 μm to 40 μm.

摘要翻译： 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，具有：依次层叠有基材和粘合剂层的切割带和设置在所述压敏粘合剂上的半导体背面用膜 层，其中压敏粘合剂层的厚度为20μm至40μm。

公开(公告)号：US08420509B2

公开(公告)日：2013-04-16

申请号：US12975783

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  C09J163/00 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/16 ,  H01L24/27 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/73204 ,  H01L2224/8101 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/831 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/31511 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has an elastic modulus (at 50° C.) of 10 MPa or less and the laser marking layer has an elastic modulus (at 50° C.) of 100 MPa or more.

摘要翻译： 本发明提供了一种用于倒装芯片型半导体背表面的薄膜，其将形成在连接在被粘物上的半导体元件倒装芯片的背面上，该薄膜包括晶片粘合层和激光标记层，其中 晶片粘合层的弹性模量（50℃）为10MPa以下，激光打标层的弹性模量（50℃）为100MPa以上。

公开(公告)号：US08269213B2

公开(公告)日：2012-09-18

申请号：US12600578

申请日：2008-05-14

申请人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

发明人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

IPC分类号： H01L23/29

CPC分类号： H01L23/293 ,  C08G59/621 ,  C08G59/688 ,  C08K5/55 ,  H01L2924/0002 ,  C08L63/00 ,  H01L2924/00

摘要： An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 μm and a standard deviation of not greater than 5 μm, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

摘要翻译： 一种用于半导体封装的环氧树脂组合物，其包含：（A）在其分子中具有至少两个环氧基的环氧树脂; （B）在其分子中具有至少两个酚羟基的化合物; 和（C）由通式（1）表示的化合物的颗粒，最大粒径不大于30μm，标准偏差不大于5μm的颗粒，分散在环氧树脂组合物中的颗粒： 其中X1〜X5可以相同或不同，分别为氢原子，碳原子数为1〜9的烷基或氟原子。 环氧树脂组合物是适用期，流动性和固化性优异的氯化物离子含量低的封装材料。 环氧树脂组合物提供了高可靠性的耐湿可靠性优异的半导体装置。

公开(公告)号：US20120208350A1

公开(公告)日：2012-08-16

申请号：US13396554

申请日：2012-02-14

申请人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

发明人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L21/78

CPC分类号： H01L23/293 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3157 ,  H01L24/10 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/10126 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

摘要： The present invention aims to provide a method of manufacturing a semiconductor device that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer, while also suppressing an increase in the number of steps in the manufacturing process. This object is achieved by a method of manufacturing a semiconductor device including the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

摘要翻译： 本发明的目的在于提供一种能够防止半导体晶片的低电介质材料层中的裂纹的半导体器件的制造方法，同时也抑制了制造工序中的工序数量的增加。 该目的通过一种制造半导体器件的方法来实现，该半导体器件包括以下步骤：将用于形成保护层的膜，其中将支撑基底，粘合剂层和热固性树脂层按顺序粘贴到凸起的晶片上 其中形成低介电材料层，热固性树脂层用作糊化表面，此外，从热固性树脂层剥离支撑基底和粘合剂层，通过热固化热固性树脂层形成保护层， 并将凸起的晶片和保护层切割在一起。

公开(公告)号：US20110084413A1

公开(公告)日：2011-04-14

申请号：US12903498

申请日：2010-10-13

申请人： Yuichiro Shishido ,  Naohide Takamoto

发明人： Yuichiro Shishido ,  Naohide Takamoto

IPC分类号： C09J133/08 ,  H01L29/00

CPC分类号： H01L24/29 ,  C08G59/4261 ,  C08G59/621 ,  C08K3/36 ,  C08L63/00 ,  H01L24/27 ,  H01L24/32 ,  H01L24/45 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48221 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： An object thereof is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing a semiconductor element onto an adherend, wherein the gel fraction in an organic component after thermal curing is performed by a heat treatment at 120° C. for 1 hour is 20% by weight or less, and the gel fraction in the organic component after thermal curing is performed by a heat treatment at 175° C. for 1 hour is in a range of 10 to 30% by weight.

摘要翻译： 其目的在于提供一种能够通过抑制芯片接合后的膜的固化收缩来防止被粘物翘曲的热固性型芯片接合薄膜和切割/芯片接合薄膜。 本发明涉及一种用于将半导体元件粘附并固定在被粘物上的热固性芯片接合膜，其中通过在120℃下热处理1小时进行热固化后的有机成分中的凝胶分数为20％ 以下，通过在175℃下热处理1小时进行热固化后的有机成分中的凝胶分数为10〜30重量％的范围。

公开(公告)号：US20100219507A1

公开(公告)日：2010-09-02

申请号：US12279633

申请日：2007-02-15

申请人： Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto ,  Tsubasa Miki

发明人： Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto ,  Tsubasa Miki

IPC分类号： H01L23/00 ,  B32B7/12 ,  H01L21/78

CPC分类号： H01L24/29 ,  C09J7/28 ,  C09J7/38 ,  C09J2201/128 ,  C09J2201/36 ,  C09J2203/326 ,  H01L24/27 ,  H01L24/32 ,  H01L24/45 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/3011 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the invention, a process for producing a semiconductor device using an adhesive sheet for a spacer, comprising preparing an adhesive sheet having a spacer layer provided with an adhesive layer on at least one surface thereof as the adhesive sheet for a spacer, a step of sticking the adhesive sheet for a spacer onto a dicing sheet with the adhesive layer as a sticking surface, a step of dicing the adhesive sheet for a spacer to form a chip-shaped spacer provided with the adhesive layer, a step of peeling the spacer from the dicing sheet together with the adhesive layer, and a step of fixing the spacer onto an adherend with the adhesive layer interposed therebetween.

摘要翻译： 根据本发明，一种使用间隔物用粘合片的半导体器件的制造方法，其特征在于，在其至少一个面上制备具有间隔层的粘合片作为间隔物的粘合片， 将用于间隔物的粘合剂片粘附到具有粘合剂层作为粘着表面的切割片上，切割用于间隔物的粘合片以形成设置有粘合剂层的芯片形间隔物的步骤，剥离间隔物的步骤 从切割片与粘合剂层一起，以及将间隔物固定在粘合剂层上的粘合剂层之间的步骤。

公开(公告)号：US20100148379A1

公开(公告)日：2010-06-17

申请号：US12600578

申请日：2008-05-14

申请人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

发明人： Hiroshi Noro ,  Naohide Takamoto ,  Eiji Toyoda

IPC分类号： H01L23/29 ,  C08L63/00

CPC分类号： H01L23/293 ,  C08G59/621 ,  C08G59/688 ,  C08K5/55 ,  H01L2924/0002 ,  C08L63/00 ,  H01L2924/00

摘要： An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 μm and a standard deviation of not greater than 5 μm, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

摘要翻译： 一种用于半导体封装的环氧树脂组合物，其包含：（A）在其分子中具有至少两个环氧基的环氧树脂; （B）在其分子中具有至少两个酚羟基的化合物; 和（C）由通式（1）表示的化合物的颗粒，最大粒径不大于30μm，标准偏差不大于5μm的颗粒，分散在环氧树脂组合物中的颗粒： 其中X1〜X5可以相同或不同，分别为氢原子，碳原子数为1〜9的烷基或氟原子。 环氧树脂组合物是适用期，流动性和固化性优异的氯化物离子含量低的封装材料。 环氧树脂组合物提供了高可靠性的耐湿可靠性优异的半导体装置。

公开(公告)号：USD589473S1

公开(公告)日：2009-03-31

申请号：US29293537

申请日：2007-11-30

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

设计人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

公开(公告)号：US20080213943A1

公开(公告)日：2008-09-04

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01B1/12

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。