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公开(公告)号：US06582989B2
公开(公告)日：2003-06-24
申请号：US10004819
申请日：2001-12-07
IPC分类号： H01L2144
CPC分类号： H01F17/0006 , H01F17/0033 , H01F41/041 , H01F2027/2814 , H01G5/18 , H01G5/38 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/48091 , H01L2924/014 , H01L2924/19042 , H05K3/4092 , H01L2924/00014
摘要： An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. Alternately, the loop winding can be formed of two elastic members in which the free ends are joined in mid-air. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
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公开(公告)号：US06549691B1
公开(公告)日：2003-04-15
申请号：US09708814
申请日：2000-11-08
IPC分类号： G02B626
CPC分类号： G02B6/3586 , G02B6/3512 , G02B6/3556 , G02B6/3588 , G02B6/359 , H04Q11/0005 , H04Q2011/0026 , H04Q2011/0039 , H04Q2011/0058
摘要： An optical cross switch including an improved system to align optical components is described. The system utilizes a highly transmissive sensor positioned in the optical path of an optical signal to determine the precise position of the optical signal. A feedback loop uses output from the highly transmissive sensor to readjust elements that maintains the optical signal in a desired position. The current system is particularly suitable for use in an optical cross switch.
摘要翻译： 描述了包括改进的对准光学部件的系统的光交叉开关。 该系统利用位于光信号的光路中的高度透射的传感器来确定光信号的精确位置。 反馈回路使用高度透射传感器的输出来重新调整将光信号保持在期望位置的元件。 目前的系统特别适用于光交叉开关。
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53.发明授权公开(公告)号：US06429417B1
公开(公告)日：2002-08-06
申请号：US09708808
申请日：2000-11-08
IPC分类号： H01L2700
CPC分类号： H01L31/1055 , G02B6/3518 , G02B6/3546 , G02B6/356 , G02B6/3588 , G02B26/0841 , H01L31/108 , H04Q11/0005 , H04Q2011/003 , H04Q2011/0039
摘要： A system to align optical components is described. The system utilizes a highly transmissive sensor positioned in the optical path of an optical signal to determine the precise position of the optical signal. A feedback loop uses output from the highly transmissive sensor to readjust elements that maintains the optical signal in a desired position. The current system is particularly suitable for use in an optical cross switch.
摘要翻译： 描述了对准光学部件的系统。 该系统利用位于光信号的光路中的高度透射的传感器来确定光信号的精确位置。 反馈回路使用高度透射传感器的输出来重新调整将光信号保持在期望位置的元件。 目前的系统特别适用于光交叉开关。
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54.发明授权Method and structure for eliminating polarization instability in laterally-oxidized VCSELs 有权消除侧向氧化VCSEL中极化不稳定性的方法和结构公开(公告)号：US06304588B1
公开(公告)日：2001-10-16
申请号：US09389160
申请日：1999-09-02
IPC分类号： H01S308
CPC分类号： H01S5/18355 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18338 , H01S5/18358 , H01S5/18394 , H01S5/2063 , H01S5/2068 , H01S5/2081 , H01S5/34313 , H01S5/34353 , H01S5/423
摘要： The polarization instability inherent in laterally-oxidized VCSELs may be mitigated by employing an appropriately-shaped device aperture, a misoriented substrate, one or more cavities or employing the shaped device aperture together with a misoriented substrate and/or cavities. The laterally-oxidized VCSELs are able to operate in a single polarization mode throughout the entire light output power versus intensity curve. Combining the use of misoriented substrates with a device design that has an asymmetric aperture that reinforces the polarization mode favored by the substrate further improves polarization selectivity. Other device designs, however, can also be combined with substrate misorientation to strengthen polarization selectivity.
摘要翻译： 侧向氧化VCSEL中固有的极化不稳定性可以通过采用适当形状的器件孔径，不对准衬底，一个或多个空腔或采用成形器件孔与错误取向的衬底和/或空腔一起来减轻。 横向氧化的VCSEL能够在整个光输出功率对强度曲线中以单一偏振模式工作。 结合使用不方向取向的基板与具有不对称孔径的装置设计，加强由基板有利的偏振模式进一步提高了极化选择性。 然而，其他器件设计也可以与衬底取向差异化以增强极化选择性。
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55.发明授权Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage 失效制造具有降低的寄生电容和降低的馈通电压的薄膜晶体管的方法
公开(公告)号：US06019796A
公开(公告)日：2000-02-01
申请号：US960025
申请日：1997-10-29
IPC分类号： H01L21/223 , H01L21/225 , H01L21/266 , H01L21/336 , H01L27/144 , H01L27/146 , H01L29/786 , H01L31/0216 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/2255 , H01L21/266 , H01L27/1443 , H01L27/14603 , H01L29/66757 , H01L29/66765 , H01L29/78669 , H01L31/02162 , H01L31/02165 , Y10S438/94
摘要： A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
摘要翻译： 提供了不具有源极/栅极或漏极/栅极重叠的制造改进的薄膜晶体管结构的方法。 应用激光辅助掺杂技术来制造这种晶体管。 使用辐射滤光器，其在光刻波长下对光是透明的，但在激光波长处是反射的或不透明的。 消除源极/栅极和漏极/栅极重叠显着降低或消除了源极和栅极之间的寄生电容和馈通电压。 可以获得具有高场效应迁移率的短沟道a-Si：H薄膜晶体管。 提供了改进的像素性能和像素到像素的均匀性。
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56.发明授权Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices 失效光刻图案弹簧接触件和用于电接触器件的装置和方法
公开(公告)号：US5944537A
公开(公告)日：1999-08-31
申请号：US990508
申请日：1997-12-15
CPC分类号： H01L23/49811 , H01L21/563 , H01L24/72 , H05K3/4092 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/4943 , H01L2224/73203 , H01L2224/85424 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01049 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01R4/48
摘要： A photolithographically patterned spring contact is formed on a substrate and electrically connects contact pads on two devices. The spring contact also compensates for thermal and mechanical variations and other environmental factors. An inherent stress gradient in the spring contact causes a free portion of the spring contact to bend up and away from the substrate. An anchor portion remains fixed to the substrate and is electrically connected to a first contact pad on the substrate. The spring contact is made of an elastic material and the free portion compliantly contacts a second contact pad, thereby electrically interconnecting the two contact pads.
摘要翻译： 光刻图案的弹簧触点形成在基板上并电连接两个器件上的接触焊盘。 弹簧触点还补偿热和机械变化等环境因素。 弹簧接触中的固有应力梯度使得弹簧接触件的自由部分向上弯曲并远离基板。 锚固部分保持固定到基底上，并且电连接到基底上的第一接触垫。 弹簧接触由弹性材料制成，并且自由部分顺从地接触第二接触垫，由此电连接两个接触垫。
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公开(公告)号：US09166375B2
公开(公告)日：2015-10-20
申请号：US13586469
申请日：2012-08-15
IPC分类号： H01S5/343 , B82Y20/00 , H01S5/04 , H01S3/109 , H01S5/183 , H01S5/34 , H01S3/0933 , H01S5/024 , H01S5/14
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译： 半导体发光器件包括泵浦光源，增益结构和输出耦合镜。 增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。 来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。 分布式布拉格反射器在增益结构内引起内部反射。 输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。 倍增结构可以设置在增益结构和输出耦合镜之间。 可以实现深紫外光谱中的输出波长。
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公开(公告)号：US08908161B2
公开(公告)日：2014-12-09
申请号：US13217821
申请日：2011-08-25
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译： 讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。 在蚀刻过程中，大块AlN暴露于蚀刻剂。 在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。
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59.发明授权公开(公告)号：US08571817B2
公开(公告)日：2013-10-29
申请号：US12208255
申请日：2008-09-10
申请人： David P. Bour , Christopher L. Chua , Zhihong Yang
发明人： David P. Bour , Christopher L. Chua , Zhihong Yang
IPC分类号： G01F1/34
CPC分类号： C23C16/4482 , C23C16/52
摘要： One disclosed feature of the embodiments is a control processor in a vapor delivery system for chemical vapor deposition precursors. A pressurization rate processor calculates first and second pressurization rate curves at first and second time instants. A volume calculator computes consumed volume based on first and second volumes at the respective first and second time instants. The first and second volumes are computed using slopes of lines fitting the first and second pressurization rate curves.
摘要翻译： 实施例的一个公开的特征是用于化学气相沉积前体的蒸气输送系统中的控制处理器。 加压率处理器计算第一和第二时刻的第一和第二加压速率曲线。 体积计算器基于相应的第一和第二时刻的第一和第二体积计算消耗的体积。 使用适合第一和第二加压速率曲线的线的斜率来计算第一和第二体积。
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公开(公告)号：US20130016746A1
公开(公告)日：2013-01-17
申请号：US13586469
申请日：2012-08-15
CPC分类号： H01S5/34333 , B82Y20/00 , H01S3/0933 , H01S3/109 , H01S5/02415 , H01S5/041 , H01S5/141 , H01S5/18347 , H01S5/1835 , H01S5/18369 , H01S5/18383 , H01S5/3407 , H01S2301/14 , H01S2304/04
摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
摘要翻译： 半导体发光器件包括泵浦光源，增益结构和输出耦合镜。 增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。 来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。 分布式布拉格反射器在增益结构内引起内部反射。 输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。 倍增结构可以设置在增益结构和输出耦合镜之间。 可以实现深紫外光谱中的输出波长。
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