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公开(公告)号：US5486488A
公开(公告)日：1996-01-23
申请号：US347712
申请日：1994-12-01
申请人： Satoshi Kamiyama
发明人： Satoshi Kamiyama
IPC分类号： H01L21/28 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10852 , Y10S148/014
摘要： In a conventional method for forming a capacity element for DRAM, a tantalum oxide film is formed on the surface of polycrystal silicon film constituting a capacity lower electrode, and a high temperature treatment is then carried out in an oxygen atmosphere to improve leakage current properties, thereby converting this tantalum oxide film. In the capacity element having the thus formed capacity insulating film, an obtainable capacity value is small. In the present invention, a densification treatment is carried out at a relatively low temperature in place of the high temperature treatment step of the tantalum oxide film, whereby the capacity element having the large capacity value can be formed without deteriorating the leakage current properties.
摘要翻译： 在用于形成用于DRAM的电容元件的常规方法中，在构成容量下电极的多晶硅膜的表面上形成氧化钽膜，然后在氧气氛中进行高温处理以改善漏电流特性， 从而转化该钽氧化物膜。 在具有如此形成的电容绝缘膜的电容元件中，可获得的容量值小。 在本发明中，代替氧化钽膜的高温处理工序，在相对较低的温度下进行致密化处理，能够形成具有大容量值的电容元件，而不会使漏电流特性恶化。
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公开(公告)号：US5254505A
公开(公告)日：1993-10-19
申请号：US753765
申请日：1991-09-03
申请人： Satoshi Kamiyama
发明人： Satoshi Kamiyama
IPC分类号： H01L27/04 , C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , B05D5/12
CPC分类号： C23C16/405 , H01L21/31604 , H01L28/40
摘要： A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N.sub.2 0) gas, said steps being performed in the same apparatus.
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公开(公告)号：US5185755A
公开(公告)日：1993-02-09
申请号：US756016
申请日：1991-09-06
CPC分类号： H01S5/2231 , H01S5/221 , H01S5/32325
摘要： A semiconductor laser comprising an active waveguide formed of a compound semiconductor comprising a Group V element phosphorous, comprised of an active layer and two cladding layers that hold the active layer between them, and a current confinement structure formed on the active waveguide by the use of a compound semiconductor comprising Group V element arsenic. This semiconductor laser can achieve a small astigmatism, a low threshold current and a low operation current. Also disclosed is a method of fabricating a semiconductor laser having characteristic features that the crystal growth may be carried out only twice, the movement of the impurities in crystals does not easily occur, a regrowth interface with a very little defect can be readily obtained, and the structure wherein the outer cladding layer has a smaller width at its portion nearer to the active waveguide can be naturally formed.
摘要翻译： 一种半导体激光器，包括由包括V族元素磷的化合物半导体形成的有源波导，该有源波导包括有源层和在其之间保持有源层的两个包层，以及通过使用在有源波导上形成的电流限制结构 包含V族元素砷的化合物半导体。 该半导体激光器可以实现小的散光，低阈值电流和低工作电流。 还公开了一种制造半导体激光器的方法，该半导体激光器的特征在于晶体生长可以仅进行两次，晶体中的杂质的移动不容易发生，可以容易地获得具有非常小的缺陷的再生界面，并且 可以自然地形成外包层在其更靠近有源波导的部分具有较小宽度的结构。
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公开(公告)号：US08143632B2
公开(公告)日：2012-03-27
申请号：US12498758
申请日：2009-07-07
申请人： Yuji Imai , Satoshi Kamiyama
发明人： Yuji Imai , Satoshi Kamiyama
CPC分类号： F21V19/0055 , F21K9/23 , F21K9/232 , F21K9/233 , F21K9/64 , F21S41/14 , F21S41/147 , F21V3/049 , F21V3/08 , F21V5/005 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265
摘要： To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and white light of good color rendering to be produced, and heat generated by the LED elements to be smoothly transmitted to an SiC fluorescent substrate. The light emitting device is provided with first LED elements for emitting UV radiation, second LED elements for emitting visible light, an SiC fluorescent substrate that is mounted with the first LED elements and the second LED elements and is made of SiC doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements, and has a body made of inorganic material.
摘要翻译： 为了提供不会使用中的辐射效率的下降的发光装置，能够提高来自LED元件的光通量，并且能够产生良好显色的白光，并且由LED元件产生的热量能够平滑地传输 涉及SiC荧光基板。 发光器件设置有用于发射UV辐射的第一LED元件，用于发射可见光的第二LED元件，安装有第一LED元件和第二LED元件的SiC荧光基板，并且由掺杂有至少一个 的B和Al以及N，并且当从第一LED元件发射的辐射激发时发射可见光，并且具有由无机材料制成的主体。
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公开(公告)号：US07368766B2
公开(公告)日：2008-05-06
申请号：US10891968
申请日：2004-07-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L31/072
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译： 本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。
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公开(公告)号：US06518082B1
公开(公告)日：2003-02-11
申请号：US09805767
申请日：2001-03-16
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L33/007 , H01S5/32341 , H01S5/34333
摘要： First, the substrate temperature is set to 1020° C., and an n-type cladding layer (14) made of n-type Al0.1Ga0.9N, an n-type optical guide layer (15) made of n-type GaN, and a flatness maintenance layer (16) made of n-type Al0.2Ga0.8N for maintaining the surface flatness of the n-type optical guide layer (15) by suppressing re-evaporation of the constituent atoms of the n-type optical guide layer (15), are grown in this order on a substrate (11) made of sapphire. Then, the supply of a group III material gas is stopped, the substrate temperature is decreased to 780° C., and the carrier gas is switched from a hydrogen gas to a nitrogen gas. Then, an active layer (17) having a multiple quantum well structure is grown by introducing NH3 as a group V source and selectively introducing TMI and TMG as a group III source.
摘要翻译： 首先，将衬底温度设定为1020℃，由n型Al 0.1 Ga 0.9 N构成的n型覆层（14），由n型GaN构成的n型光导层（15） 以及由n型Al 0.2 Ga 0.8 N制成的平面维持层（16），用于通过抑制n型光导体（15）的构成原子的再蒸发来维持n型光导层（15）的表面平坦度 引导层（15）依次生长在由蓝宝石制成的基板（11）上。 然后，停止供给III族原料气体，将基板温度降低至780℃，并将载气从氢气切换为氮气。 然后，通过引入NH 3作为V族源并选择性地引入作为III族源的TMI和TMG，生长具有多量子阱结构的活性层（17）。
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公开(公告)号：US06169296A
公开(公告)日：2001-01-02
申请号：US09176906
申请日：1998-10-22
申请人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
发明人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/145 , H01L33/38 , H01L33/42
摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.
摘要翻译： 本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。 有源层形成在n型半导体衬底上。 接触层形成在有源层上。 肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。 欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。
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公开(公告)号：US5663974A
公开(公告)日：1997-09-02
申请号：US555284
申请日：1995-11-08
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/347 , H01S5/2004 , H01S5/3409
摘要： A semiconductor laser of the present invention includes: a Zn.sub.1-X Cd.sub.X Se active layer (0
摘要翻译： 本发明的半导体激光器包括：Zn1-XCdXSe活性层（0
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公开(公告)号：US5619520A
公开(公告)日：1997-04-08
申请号：US523189
申请日：1995-09-05
CPC分类号： B82Y20/00 , H01S5/347 , H01S5/2231
摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x
摘要翻译： 本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0
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公开(公告)号：US5523256A
公开(公告)日：1996-06-04
申请号：US278395
申请日：1994-07-21
CPC分类号： H01S5/10 , H01S5/2231 , H01S5/0655 , H01S5/0658 , H01S5/106 , H01S5/1064 , H01S5/209 , H01S5/2206 , H01S5/2219 , H01S5/222 , H01S5/32325
摘要： A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.
摘要翻译： 根据本发明的半导体激光器包括：半导体衬底; 设置在所述半导体衬底上的多层结构，所述多层结构包括有源层，插入所述有源层的一对包覆层以及用于将电流注入到所述有源层的条形预定区域中的电流限制部分，其中，所述电流 限制部分包括形成在除了与有源层的预定区域相对应的区域之外的区域中的第一电流限制层，第一电流限制层具有大于有源层的能带隙的能带隙并具有更小的折射率 比活性层的折射率高。
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