公开(公告)号：US08134166B2

公开(公告)日：2012-03-13

申请号：US12498738

申请日：2009-07-07

申请人： Yuji Imai ,  Satoshi Kamiyama

发明人： Yuji Imai ,  Satoshi Kamiyama

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： F21V5/005 ,  F21K9/23 ,  F21K9/64 ,  F21S41/14 ,  F21S41/147 ,  F21V3/049 ,  F21V3/08 ,  F21V19/0055 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00012

摘要： A light emitting device that has a radiant efficiency that does not decline in use, enables luminous flux to be increased by a high electric current, and produces white light with good color rendering and a method for producing a light emitting device capable of smoothly transmitting heat generated by LED elements to a carrier substrate. The radiation emitting device has first LED elements for emitting UV radiation, second LED elements for emitting visible light, a substrate made of an inorganic material and which carries the first LED elements and the second LED elements, a body made of inorganic material containing the first LED elements, the second LED elements and the substrate, and an SiC fluorescent screen that is doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements.

摘要翻译： 具有不会在使用中下降的辐射效率的发光装置能够通过高电流增加光通量，并且产生具有良好显色性的白光，以及能够平滑地发射热量的发光装置的制造方法 由LED元件产生到载体衬底。 辐射发射装置具有用于发射紫外线辐射的第一LED元件，用于发射可见光的第二LED元件，由无机材料制成并载有第一LED元件和第二LED元件的基板，由无机材料制成的主体， LED元件，第二LED元件和衬底，以及掺杂有B和Al以及N中的至少一种的SiC荧光屏，并且当由从第一LED元件发射的辐射激发时发射可见光。

公开(公告)号：US08143632B2

公开(公告)日：2012-03-27

申请号：US12498758

申请日：2009-07-07

申请人： Yuji Imai ,  Satoshi Kamiyama

发明人： Yuji Imai ,  Satoshi Kamiyama

IPC分类号： H01J1/62 ,  H01J9/24

CPC分类号： F21V19/0055 ,  F21K9/23 ,  F21K9/232 ,  F21K9/233 ,  F21K9/64 ,  F21S41/14 ,  F21S41/147 ,  F21V3/049 ,  F21V3/08 ,  F21V5/005 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

摘要： To provide a light emitting device that does not experience a decline in radiant efficiency in use, enables luminous flux from LED elements to be increased, and white light of good color rendering to be produced, and heat generated by the LED elements to be smoothly transmitted to an SiC fluorescent substrate. The light emitting device is provided with first LED elements for emitting UV radiation, second LED elements for emitting visible light, an SiC fluorescent substrate that is mounted with the first LED elements and the second LED elements and is made of SiC doped with at least one of B and Al as well as N and emits visible light when excited by radiation emitted from the first LED elements, and has a body made of inorganic material.

摘要翻译： 为了提供不会使用中的辐射效率的下降的发光装置，能够提高来自LED元件的光通量，并且能够产生良好显色的白光，并且由LED元件产生的热量能够平滑地传输 涉及SiC荧光基板。 发光器件设置有用于发射UV辐射的第一LED元件，用于发射可见光的第二LED元件，安装有第一LED元件和第二LED元件的SiC荧光基板，并且由掺杂有至少一个 的B和Al以及N，并且当从第一LED元件发射的辐射激发时发射可见光，并且具有由无机材料制成的主体。

公开(公告)号：US09412586B2

公开(公告)日：2016-08-09

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L33/00

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US07612381B2

公开(公告)日：2009-11-03

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。

公开(公告)号：US20090159924A1

公开(公告)日：2009-06-25

申请号：US12391531

申请日：2009-02-24

申请人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

发明人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/02272 ,  H01S5/2068 ,  H01S5/2201 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/3403 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  Y10S257/918 ,  Y10T428/12528

摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

摘要翻译： 本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在活性层的c面产生各向异性应变。

公开(公告)号：US6087725A

公开(公告)日：2000-07-11

申请号：US161498

申请日：1998-09-28

申请人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

发明人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

IPC分类号： H01L33/28 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/28

摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

摘要翻译： 在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。 在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层 的p型ZnS0.5Te0.5和第五层p型ZnTe。

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US5705831A

公开(公告)日：1998-01-06

申请号：US415540

申请日：1995-04-03

申请人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

发明人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06

摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0

摘要翻译： 根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

公开(公告)号：US5438012A

公开(公告)日：1995-08-01

申请号：US102634

申请日：1993-08-05

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L28/40

摘要： A capacitor element of a semiconductor device used for a super-LSI is formed by the steps including (a) removing a natural oxide film on a surface of a lower electrode of polysilicon, (b) forming on the surface of the lower electrode an impurity-doped tantalum oxide film, and (c) forming an upper electrode with at least a bottom thereof constituted by titanium nitride. The steps may further include (d) nitriding the surface of the lower electrode after the removal of the natural oxide film, and (e) densifying the tantalum oxide film by way of a high temperature heat treatment after the formation of the tantalum oxide film. In this way, it is possible to reduce thickness of a capacitive insulating film and to form the capacitor element in which the leakage current characteristics are improved.

摘要翻译： 用于超级LSI的半导体器件的电容器元件通过以下步骤形成，所述步骤包括：（a）在多晶硅的下电极的表面上去除自然氧化物膜，（b）在下电极的表面上形成杂质 掺杂的氧化钽膜，（c）至少形成由氮化钛构成的底部的上部电极。 这些步骤还可以包括（d）在去除天然氧化物膜之后氮化下电极的表面，和（e）在氧化钽膜形成之后通过高温热处理使氧化钽膜致密化。 以这种方式，可以减小电容绝缘膜的厚度并形成其中泄漏电流特性得到改善的电容器元件。

公开(公告)号：US5352623A

公开(公告)日：1994-10-04

申请号：US196486

申请日：1994-02-15

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L27/10852 ,  H01L28/40

摘要： A method for manufacturing a semiconductor device, wherein a thin film of tantalum oxide is formed as a dielectric film in a capacitor element, increases capacitance per unit area and reduces a leakage current in the capacitor element of DRAM memory cells. The method includes steps of forming a polysilicon film constituting a lower electrode of the capacitor element, removing a natural oxide film from the surface of the polysilicon film, nitriding the surface of the polysilicon by rapid thermal nitriding (RTN) using lamp-annealing, forming a tantalum oxide film, densifying and nitriding consecutively the tantalum oxide film, and forming an upper capacitor electrode thereon. The capacitor element formed by the method has a large capacitance per unit area Cs=13.8 fF/.mu.m.sup.2.

摘要翻译： 一种用于制造半导体器件的方法，其中在电容器元件中形成氧化钽薄膜作为电介质膜，增加了每单位面积的电容，并降低了DRAM存储单元的电容器元件中的漏电流。 该方法包括以下步骤：形成构成电容器元件的下电极的多晶硅膜，从多晶硅膜的表面去除自然氧化膜，通过使用灯退火的快速热氮化（RTN）对多晶硅的表面进行氮化，形成 氧化钽膜，连续致密化氮化钽膜，在其上形成上层电容电极。 由该方法形成的电容器元件具有单位面积Cs = 13.8fF / m 2的大电容。