公开(公告)号：US20180209042A1

公开(公告)日：2018-07-26

申请号：US15849253

申请日：2017-12-20

Applicant: Applied Materials, Inc.

Inventor： Xiaowei Wu ,  David Fenwick ,  Jennifer Y. Sun ,  Guodong Zhan

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/06

CPC classification number: H01J37/32495 ,  C23C16/045 ,  C23C16/06 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of Y2O3—ZrO2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

公开(公告)号：US10008381B2

公开(公告)日：2018-06-26

申请号：US14929070

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L27/108 ,  H01L49/02 ,  C01G23/04 ,  H01L23/373 ,  H05K1/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/367

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y02P20/129 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

公开(公告)号：US20180155379A1

公开(公告)日：2018-06-07

申请号：US15831621

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: C07F15/0053 ,  C07F15/0046 ,  C23C16/18 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US09988411B2

公开(公告)日：2018-06-05

申请号：US15598398

申请日：2017-05-18

Applicant: ADEKA CORPORATION

Inventor： Hiroki Sato ,  Junji Ueyama

IPC: C07C17/00 ,  C07F11/00 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  C07F17/00 ,  C23C16/40

CPC classification number: C07F17/00 ,  C07F11/00 ,  C23C16/18 ,  C23C16/405 ,  C23C16/44 ,  C23C16/45525

Abstract: In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)

公开(公告)号：US20180151354A1

公开(公告)日：2018-05-31

申请号：US15882710

申请日：2018-01-29

Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventor： Christian DUSSARRAT ,  Nicolas BLASCO ,  Audrey PINCHART ,  Christophe LACHAUD

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

CPC classification number: H01L21/02205 ,  C07F7/00 ,  C07F7/003 ,  C07F17/00 ,  C23C16/18 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45553 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.

公开(公告)号：US20180122645A1

公开(公告)日：2018-05-03

申请号：US15659163

申请日：2017-07-25

Applicant: HANSOL CHEMICAL CO., LTD

Inventor： Jung-Woo PARK ,  Hong-Ki KIM ,  Mi-Ra PARK ,  Jun-Hyuck KWON

IPC: H01L21/28 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28194 ,  C07F17/00 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L29/517

Abstract: The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.

公开(公告)号：US09953830B2

公开(公告)日：2018-04-24

申请号：US15124915

申请日：2014-03-13

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Takuro Ushida ,  Tsukasa Kamakura ,  Yoshiro Hirose ,  Kimihiko Nakatani

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/52 ,  H01L21/02186 ,  H01L21/02277

Abstract: A method of manufacturing a semiconductor device includes forming an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.

公开(公告)号：US20180094348A1

公开(公告)日：2018-04-05

申请号：US15820871

申请日：2017-11-22

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/56 ,  C23C16/455 ,  C23C16/02 ,  C23C16/30

CPC classification number: C23C16/40 ,  C23C16/0227 ,  C23C16/30 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01J37/32467 ,  H01J37/32495

Abstract: Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride. Also described are chamber components having a plasma resistant ceramic coating of an erbium containing oxide, an erbium containing oxy-fluoride, or an erbium containing fluoride.

公开(公告)号：US09911590B2

公开(公告)日：2018-03-06

申请号：US15407913

申请日：2017-01-17

Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventor： Christian Dussarrat ,  Nicolas Blasco ,  Audrey Pinchart ,  Christophe Lachaud

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C07F7/00 ,  C07F7/003 ,  C07F17/00 ,  C23C16/18 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45553 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

Abstract: Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.

公开(公告)号：US20180037993A1

公开(公告)日：2018-02-08

申请号：US15786358

申请日：2017-10-17

Applicant: William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

Inventor： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  H01J37/02 ,  B81B3/00 ,  H01J37/317 ,  C23C16/40 ,  H01J37/12

CPC classification number: C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

Abstract: A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.