-
公开(公告)号：US11891697B2
公开(公告)日：2024-02-06
申请号：US17208306
申请日：2021-03-22
IPC分类号： C23C16/458 , H01L21/02 , C23C16/34 , C23C16/40
CPC分类号： C23C16/4584 , C23C16/345 , C23C16/401 , H01L21/022 , H01L21/0217 , H01L21/02164 , H01L21/02271
摘要： There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.
-
公开(公告)号：US11887781B2
公开(公告)日：2024-01-30
申请号：US17685346
申请日：2022-03-02
申请人： Forge Nano, Inc.
发明人： David M. King , Paul Lichty
IPC分类号： H01G11/24 , B22F1/054 , C23C16/455 , C23C16/40 , H01M4/36 , C23C18/12 , H01G4/008 , H01G4/12 , C23C16/44 , C23C16/442 , H01G11/50 , C23C16/34 , C23C16/02 , H01G11/30 , B05D1/00 , H01M4/62 , B22F1/16 , H01G4/30 , H01G11/46 , H01G4/33
CPC分类号： H01G11/24 , B05D1/00 , B22F1/054 , B22F1/056 , B22F1/16 , C23C16/0236 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/442 , C23C16/4417 , C23C16/45525 , C23C16/45555 , C23C18/1216 , H01G4/008 , H01G4/0085 , H01G4/1227 , H01G11/30 , H01G11/50 , H01M4/366 , H01M4/62 , H01G4/30 , H01G4/33 , H01G11/46
摘要： The present invention provides various passive electronic components comprising a layer of coated particles, and methods for producing and using the same. Some of the passive electronic components of the invention include, but are not limited to conductors, resistors, current collectors, capacitors, piezoelectronic devices, inductors and transformers. The present invention also provides energy storage devices and electrode layers for such energy storage devices having passive, electrically-conductive particles coated with one or more thin film materials.
-
公开(公告)号：US20240026500A1
公开(公告)日：2024-01-25
申请号：US18038648
申请日：2021-11-22
申请人： AB SANDVIK COROMANT
CPC分类号： C22C29/02 , C22C29/005 , C23C16/34 , C23C16/36 , C23C16/403
摘要： A coated cutting tool has a CVD coated and a substrate of a cemented carbide, wherein the metallic binder in the cemented carbide includes Ni. The CVD coating has an inner layer of TiN and a subsequent layer of TiCN. The C-activity relative to graphite in the metallic binder is lower than 0.15 and an average d electron value of the metallic binder is 7.00-7.43, wherein an interface between the substrate and the inner TiN layer is free of Ti-containing intermetallic phase.
-
公开(公告)号：US20240014033A1
公开(公告)日：2024-01-11
申请号：US18218221
申请日：2023-07-05
申请人： ASM IP Holding B.V.
发明人： Hiroshi Kou , Hideaki Fukuda
CPC分类号： H01L21/02211 , H01L21/0217 , C23C16/345 , H01L21/0228 , H01L21/02274
摘要： Methods of depositing material onto a surface of a substrate. Exemplary methods include flowing a gas-phase precursor within the reaction chamber, condensing the precursor onto the surface of the substrate to form condensed material, and curing the condensed material to transform the condensed material to cured material. The step of curing can be a plasma process and can include use of a reactant.
-
55.发明授权公开(公告)号：US11867876B2
公开(公告)日：2024-01-09
申请号：US17252079
申请日：2019-06-13
发明人： William Trottier-Lapointe , Bruce Faure , Bill Baloukas , Richard Vernhes , Oleg Zabeida , Ludvik Martinu , Sasha Woodward , Nicolas Desjardins-Lecavalier , Julien Gagnon
IPC分类号： G02B1/118 , C03C17/34 , C23C14/08 , C23C14/10 , C23C14/22 , C23C14/30 , C23C16/34 , C23C16/455 , C23C16/56 , C23C28/04 , G02C7/10
CPC分类号： G02B1/118 , C03C17/3435 , C23C14/083 , C23C14/10 , C23C14/226 , C23C14/30 , C23C16/34 , C23C16/45555 , C23C16/56 , C23C28/042 , G02C7/104 , C03C2217/213 , C03C2217/219 , C03C2217/281 , C03C2217/73 , C03C2217/78 , C03C2217/948 , C03C2218/151 , C03C2218/152
摘要： An optical article includes a substrate with front and rear main faces, one main face coated with a columnar micro- or nano-structured coating. The substrate and optical article are transparent in at least a part of the visible region ranging from 380 to 780 nm, along at least one incidence angle. The columnar micro- or nano-structured coating includes an array of columns including each a core and an upper layer covering the core, the core and the upper layer being structurally and/or chemically different and have light absorbing properties with an extinction coefficient “k” ≥10-2 in the spectrum 250-2500 nm and are able to cause a change in transmission or in reflection of incident light through the optical article as a function of the angle of incidence of light. Also disclosed is a method for manufacturing an optical article including a columnar micro- or nano-structured coating.
-
公开(公告)号：US11866373B2
公开(公告)日：2024-01-09
申请号：US18042963
申请日：2021-08-25
发明人： Arnaud Delehouze , Eric Bouillon , Amine El Mansouri , Nathalie Dominique Bertrand , Alain Jean-Michel Guette
IPC分类号： C04B35/573 , C04B35/628 , C04B35/657 , C04B35/80 , C23C16/04 , C23C16/26 , C23C16/34
CPC分类号： C04B35/62884 , C04B35/62868 , C04B35/62871 , C04B35/62873 , C04B35/62878 , C04B35/62897 , C04B35/657 , C04B35/80 , C23C16/045 , C23C16/26 , C23C16/342 , C23C16/345 , C04B2235/428 , C04B2235/526 , C04B2235/5248 , C04B2235/5252 , C04B2235/5264 , C04B2235/616
摘要： A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.
-
57.发明公开公开(公告)号：US20230407472A1
公开(公告)日：2023-12-21
申请号：US18359107
申请日：2023-07-26
发明人： Hiroki HATTA , Takeo HANASHIMA , Koei KURIBAYASHI , Shin SONE
IPC分类号： C23C16/455 , C23C16/34 , C23C16/30 , C23C16/40 , H01L21/02
CPC分类号： C23C16/45527 , C23C16/345 , C23C16/308 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.
-
58.发明授权公开(公告)号：US11842883B2
公开(公告)日：2023-12-12
申请号：US17718047
申请日：2022-04-11
发明人： Jong-hoon Park , Sukwon Jung , Hyunwoo Joo , Jaihyuk Choi , Kyungjoo Min , Wonwoong Park
IPC分类号： H01J37/32 , C23C16/44 , C23C16/505 , C23C16/455 , C23C16/509 , H10K71/00 , C23C16/34 , H10K71/16
CPC分类号： H01J37/32082 , C23C16/4411 , C23C16/4412 , C23C16/45565 , C23C16/505 , C23C16/5096 , H01J37/3244 , H01J37/32091 , H01J37/32458 , H01J37/32467 , H01J37/32568 , H01J37/32577 , H10K71/00 , C23C16/345 , H01J2237/3321 , H10K71/164
摘要： A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.
-
公开(公告)号：US20230386831A1
公开(公告)日：2023-11-30
申请号：US18245939
申请日：2021-09-23
IPC分类号： H01L21/02 , C23C16/04 , C23C16/455 , C23C16/56 , C23C16/40 , C23C16/34 , C23C16/02 , H01J37/32
CPC分类号： H01L21/02304 , C23C16/04 , C23C16/45544 , C23C16/56 , C23C16/40 , C23C16/34 , C23C16/0245 , H01L21/02211 , H01L21/0228 , H01L21/02315 , H01L21/0234 , H01J37/32834 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02164 , H01L21/0214
摘要： The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region.
-
公开(公告)号：US20230377953A1
公开(公告)日：2023-11-23
申请号：US18248562
申请日：2021-10-01
发明人： Hiroki MURAKAMI
IPC分类号： H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/311 , C23C16/40 , C23C16/34 , C23C16/52 , H01J37/32
CPC分类号： H01L21/7682 , H01L21/02164 , H01L21/0228 , H01L21/31055 , H01L21/31138 , H01L21/31116 , H01L21/76831 , H01L21/02115 , H01L21/0217 , H01L21/02211 , C23C16/402 , C23C16/345 , C23C16/52 , H01J37/32449 , H01J2237/3321 , H01J2237/3341
摘要： A substrate processing method includes: preparing a substrate having a recess and a first film embedded in the recess; and removing the first film by etching while forming a second film so as to cover the recess from which the first film was removed by supplying a processing gas to the substrate, the processing gas including a gas contributing to film formation and a gas contributing to the etching.
-
-
-
-
-
-
-
-
-
搜索结果
3544 条记录 (耗时 0.027 秒)
