COUPLING BETWEEN NANOSTRUCTURES AND OPTICAL FIBERS
    57.
    发明申请
    COUPLING BETWEEN NANOSTRUCTURES AND OPTICAL FIBERS 有权
    纳米结构与光纤之间的耦合

    公开(公告)号:US20160049214A1

    公开(公告)日:2016-02-18

    申请号:US14458202

    申请日:2014-08-12

    发明人: Peter J. Reece

    摘要: Technologies are generally provided for enhancing optical coupling between nanostructures, such as a nanowire, and an optical element, such as an optical fiber, for example in order to enable effective optical communication. A nanostructure may be automatically aligned with an optical fiber by suspending the nanowire within a fluid and causing the nanowire to align itself with a tip of the optical fiber also suspended within the fluid. Light may be directed through the optical fiber to induce an optical gradient in the fluid near the optical fiber tip. The optical gradient may attract the nanowire to the tip of the optical fiber, and may cause to align with the optical fiber. Post-alignment, the nanowire may be permanently coupled with the optical fiber to form a nanowire-optical fiber assembly to couple light between the optical fiber and a nanophotonic circuit integrated with the nanowire.

    摘要翻译: 通常提供技术用于增强例如纳米线和诸如光纤的光学元件之类的纳米结构之间的光学耦合,例如以便能够进行有效的光学通信。 纳米结构可以通过将纳米线悬浮在流体内并使纳米线自身与也悬浮在流体内的光纤的尖端对准而自动地与光纤对准。 光可以引导通过光纤以在光纤尖端附近的流体中引起光学梯度。 光学梯度可以将纳米线吸引到光纤的尖端,并且可能导致与光纤对准。 后对准,纳米线可以与光纤永久耦合以形成纳米线光纤组件,以在光纤和与纳米线集成的纳米光子电路之间耦合光。

    Self-assemblable polymer and methods for use in lithography
    59.
    发明授权
    Self-assemblable polymer and methods for use in lithography 有权
    自组装聚合物和用于光刻的方法

    公开(公告)号:US08956804B2

    公开(公告)日:2015-02-17

    申请号:US14123943

    申请日:2012-06-07

    摘要: A block copolymer, adapted to self-assemble to form an ordered pattern on a substrate, has first and second blocks with a terminal moiety covalently bonded to the end of the first block. The molecular weight of the terminal moiety is 20% or less than that of the block copolymer and the terminal moiety has a low chemical affinity for the first block. The terminal moiety can assist the accurate positional placement of the domains of the ordered array and lead to improved critical dimension uniformity and/or reduced line edge roughness. The polymer may be useful in combination with a graphoepitaxy template, where the terminal moiety is chosen to associate with a sidewall of the template. This may reduce undesired aggregation of polymer domains at a sidewall and/or assist in domain placement accuracy.

    摘要翻译: 适于自组装以在基底上形成有序图案的嵌段共聚物具有第一和第二嵌段,其末端部分共价键合到第一嵌段的末端。 末端部分的分子量为嵌段共聚物的分子量的20%以下,末端部分对第一嵌段具有低的化学亲和力。 末端部分可以帮助有序阵列的域的精确位置放置并且导致改进的临界尺寸均匀性和/或减少的线边缘粗糙度。 所述聚合物可以与骨架外延模板组合使用,其中末端部分被选择为与模板的侧壁缔合。 这可以减少侧壁处的聚合物域的不希望的聚集和/或有助于域放置精度。

    PATTERN FORMING METHOD
    60.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号:US20140069325A1

    公开(公告)日:2014-03-13

    申请号:US13784620

    申请日:2013-03-04

    发明人: Ayako KAWANISHI

    IPC分类号: C30B19/00

    摘要: According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly pattern that has a first region containing the first segment, and a second region containing the second segment by performing a phase separation of the first self-assembly material layer, a process of forming a second self-assembly material layer containing a third segment and a fourth segment on a projected portion of the graphoepitaxy, and the first self-assembly pattern, a process of forming a second self-assembly pattern that has a third region containing the third segment, and a fourth region containing the fourth segment by performing a phase separation of the second self-assembly material layer.

    摘要翻译: 根据一个实施例,图案形成方法包括在基底上形成划线蛋白石,形成第一自组装材料层的工艺,该第一自组装材料层包含第一部分和第二部分,所述第一部分和第二部分在凹凸部分中,形成 第一自组装图案,其具有包含第一段的第一区域,以及通过执行第一自组装材料层的相分离而包含第二区段的第二区域;形成包含第一自组装材料层的第二自组装材料层的工艺; 第三片段和第四片段,以及第一自组装图案,形成具有包含第三片段的第三区域的第二自组装图案的工艺,以及包含第四片段的第四片段 通过执行第二自组装材料层的相分离。