公开(公告)号：US08387674B2

公开(公告)日：2013-03-05

申请号：US12054097

申请日：2008-03-24

申请人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

IPC分类号： B29C65/00

CPC分类号： H01L25/50 ,  H01L21/67051 ,  H01L24/28 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01094 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/19042 ,  Y10T156/14 ,  H01L2924/00

摘要： The present disclosure provides a bonding apparatus. The bonding apparatus includes a cleaning module designed for cleaning chips; and a chip-to-wafer bonding chamber configured to receive the chips from the cleaning module and designed for bonding the chips to a wafer.

公开(公告)号：US08148826B2

公开(公告)日：2012-04-03

申请号：US13273845

申请日：2011-10-14

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L25/00 ,  H01L21/58 ,  H01L21/56

CPC分类号： H01L21/8221 ,  H01L21/76898 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10S148/164 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/013

摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。

公开(公告)号：US08053277B2

公开(公告)日：2011-11-08

申请号：US12878112

申请日：2010-09-09

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu ,  Ku-Feng Yang

IPC分类号： H01L21/50

CPC分类号： H01L21/8221 ,  H01L21/76898 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  Y10S148/164 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/013

摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。

公开(公告)号：US20100171197A1

公开(公告)日：2010-07-08

申请号：US12348622

申请日：2009-01-05

申请人： Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Hung-Pin Chang ,  Kuo-Ching Hsu ,  Chen-Shien Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L23/48 ,  H01L21/34

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/6834 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05558 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00

摘要： An isolation structure for stacked dies is provided. A through-silicon via is formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon via. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon via. The isolation film is thinned to re-expose the through-silicon via, and conductive elements are formed on the through-silicon via. The conductive element may be, for example, a solder ball or a conductive pad. The conductive pad may be formed by depositing a seed layer and an overlying mask layer. The conductive pad is formed on the exposed seed layer. Thereafter, the mask layer and the unused seed layer may be removed.

摘要翻译： 提供了一种用于堆叠模具的隔离结构。 在半导体衬底中形成贯通硅通孔。 半导体衬底的背面变薄以暴露通硅通孔。 在半导体衬底的背面和透硅通孔的暴露部分之后形成隔离膜。 隔离膜被稀薄以重新暴露通硅通孔，并且导电元件形成在穿硅通孔上。 导电元件可以是例如焊球或导电垫。 可以通过沉积种子层和覆盖掩模层来形成导电焊盘。 导电焊盘形成在暴露的种子层上。 此后，可以去除掩模层和未使用的种子层。

公开(公告)号：US20100144068A1

公开(公告)日：2010-06-10

申请号：US12329304

申请日：2008-12-05

申请人： Wen-Chih Chiou ,  Weng-Jin Wu ,  Chen-Hua Yu

发明人： Wen-Chih Chiou ,  Weng-Jin Wu ,  Chen-Hua Yu

IPC分类号： H01L21/98

CPC分类号： H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541

摘要： A method of forming integrated circuits includes providing a wafer that includes a plurality of dies; aligning a first top die to a first bottom die in the wafer; recording a first destination position of the first top die after the first top die is aligned to the first bottom die; bonding the first top die onto the first bottom die; calculating a second destination position of a second top die using the first destination position; moving the second top die to the second destination position; and bonding the second top die onto a second bottom die without any additional alignment action.

摘要翻译： 一种形成集成电路的方法包括提供包括多个管芯的晶片; 将第一顶模与所述晶片中的第一底模对准; 在所述第一顶模与所述第一底模对准之后，记录所述第一顶模的第一目的位置; 将第一顶模连接到第一底模上; 使用所述第一目的地位置计算第二顶模的第二目的位置; 将第二顶部模具移动到第二目的地位置; 以及将所述第二顶模连接到第二底模上而没有任何附加的对准作用。

公开(公告)号：US08716867B2

公开(公告)日：2014-05-06

申请号：US12778867

申请日：2010-05-12

申请人： Francis Ko ,  Chi-Chun Hsieh ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Francis Ko ,  Chi-Chun Hsieh ,  Shang-Yun Hou ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B41F33/00

CPC分类号： H01L23/5384 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49883 ,  H01L23/525 ,  H01L23/5328 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method of forming a device includes printing conductive patterns on a dielectric sheet to form a pre-ink-printed sheet, and bonding the pre-ink-printed sheet onto a side of a substrate. The conductive feature includes a through-substrate via extending from a first major side of the substrate to a second major side of the substrate opposite the first major side. A conductive paste is then applied to electrically couple conductive patterns to a conductive feature in the substrate.

摘要翻译： 形成器件的方法包括在电介质片上印刷导电图案以形成预先印墨的片材，以及将预印墨片材粘合到基片的一侧上。 导电特征包括从衬底的第一主侧延伸到与第一主侧相对的衬底的第二主侧的贯通衬底。 然后施加导电膏以将导电图案电耦合到衬底中的导电特征。

公开(公告)号：US08674513B2

公开(公告)日：2014-03-18

申请号：US12779734

申请日：2010-05-13

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Tsang-Jiuh Wu

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Tsang-Jiuh Wu

IPC分类号： H01L23/522

CPC分类号： H01L21/76895 ,  H01L21/563 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49894 ,  H01L23/5283 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00

摘要： A device for use with integrated circuits is provided. The device includes a substrate having a through-substrate via formed therethrough. Dielectric layers are formed over at least one side of the substrate and metallization layers are formed within the dielectric layers. A first metallization layer closest to the through-substrate via is larger than one or more overlying metallization layers. In an embodiment, a top metallization layer is larger than one or more underlying metallization layers. Integrated circuit dies may be attached to the substrate on either or both sides of the substrate, and either side of the substrate may be attached to another substrate, such as a printed circuit board, a high-density interconnect, a packaging substrate, an organic substrate, a laminate substrate, or the like.

摘要翻译： 提供了一种与集成电路一起使用的装置。 该器件包括具有通过其形成的贯通基板通孔的基板。 电介质层形成在衬底的至少一侧上，并且在电介质层内形成金属化层。 最靠近贯穿衬底通孔的第一金属化层大于一个或多个上覆的金属化层。 在一个实施例中，顶部金属化层大于一个或多个下面的金属化层。 集成电路管芯可以在衬底的一侧或两侧附着到衬底，并且衬底的任一侧可以附接到另一个衬底，例如印刷电路板，高密度互连，封装衬底，有机 基板，层叠基板等。

公开(公告)号：US08567837B2

公开(公告)日：2013-10-29

申请号：US12954180

申请日：2010-11-24

申请人： Hsin Chang ,  Hsin-Yu Chen ,  Fang Wen Tsai ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Hsin Chang ,  Hsin-Yu Chen ,  Fang Wen Tsai ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： B66F19/00

CPC分类号： H01L21/6875 ,  B65G47/90 ,  H01L21/68707 ,  Y10T74/20305

摘要： An apparatus includes a robot arm, and a plurality of guide pins mounted on the robot arm. Each of the plurality of guide pins includes a plurality of wafer supports at different levels, with each of the plurality of wafer supports configured to support and center a wafer having a size different from wafers configured to be supported and centered by remaining ones of the plurality of wafer supports.

公开(公告)号：US08540506B2

公开(公告)日：2013-09-24

申请号：US12857245

申请日：2010-08-16

申请人： Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/67126 ,  H01L23/3121 ,  H01L24/94 ,  H01L2224/16145 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/94 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00

摘要： A system and method for a semiconductor molding chamber is disclosed. An embodiment comprises a top molding portion and a bottom molding portion that form a cavity between them into which a semiconductor wafer is placed. The semiconductor molding chamber has a first set of vacuum tubes which hold and fix the position of the semiconductor wafer and a second set of vacuum tubes which evacuate the cavity of extraneous ambient gasses. The encapsulant may then be placed over the semiconductor wafer in order to encapsulate the semiconductor wafer.

公开(公告)号：US08528802B2

公开(公告)日：2013-09-10

申请号：US12204063

申请日：2008-09-04

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu

IPC分类号： B23K1/06 ,  B23K31/02

CPC分类号： H01L24/64 ,  B23K1/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/056 ,  H01L2224/75 ,  H01L2224/751 ,  H01L2224/75301 ,  H01L2224/81011 ,  H01L2224/81054 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10T29/53174 ,  H01L2924/00014

摘要： An apparatus including a bond head, a supplemental support, a reduction module, and a transducer is provided. The bond head holds a first substrate that contains a first set of metal pads. The supplemental support holds a second substrate that contains a second set of metal pads. The aligner forms an aligned set of metal pads by aligning the first substrate to the second substrate. The reduction module contains the aligned substrates and a reduction gas flows into the reduction module. The transducer provides repeated relative motion to the aligned set of metal pads.

摘要翻译： 提供了一种包括接合头，补充支撑，还原模块和换能器的装置。 结合头保持包含第一组金属垫的第一衬底。 补充支撑件保持包含第二组金属垫的第二基底。 对准器通过将第一衬底与第二衬底对准而形成对准的一组金属衬垫。 还原模块包含对准的基板，并且还原气体流入还原模块。 传感器向对准的一组金属焊盘提供重复的相对运动。