公开(公告)号：US07528051B2

公开(公告)日：2009-05-05

申请号：US10846734

申请日：2004-05-14

申请人： Reza Arghavani ,  Zheng Yuan ,  Ellie Y. Yieh ,  Shankar Venkataraman ,  Nitin K. Ingle

发明人： Reza Arghavani ,  Zheng Yuan ,  Ellie Y. Yieh ,  Shankar Venkataraman ,  Nitin K. Ingle

IPC分类号： H01L21/76

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7846

摘要： A method of fabricating a semiconductor device, where the method includes forming a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.

摘要翻译： 一种制造半导体器件的方法，其中所述方法包括在衬底上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间传导电荷的沟道区域，形成与所述晶体管相邻的沟槽， 在衬底上和沟槽内，并对材料进行退火，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。 另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料 在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

公开(公告)号：US07431967B2

公开(公告)日：2008-10-07

申请号：US10757770

申请日：2004-01-14

申请人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

发明人： Zheng Yuan ,  Shankar Venkataraman ,  Cary Ching ,  Shang Wong ,  Kevin Mikio Mukai ,  Nitin K. Ingle

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23C16/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/76837

摘要： A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

摘要翻译： 在衬底上填充间隙的方法包括提供含硅处理气体氧化处理气体和含磷处理气体的流向容纳衬底的腔室，并将P掺杂氧化硅膜的第一部分基本上 通过引起处理气体之间的反应并随时间改变气体的比例，间隙中的保形层。 在保形层的沉积过程中，基板的温度保持在约500℃以下。 该方法还包括通过在本体层的整个沉积期间保持气体的比率基本恒定来沉积P掺杂氧化硅膜的第二部分作为本体层。 在本体层的整个沉积过程中，衬底的温度保持在约500℃以下。

公开(公告)号：US07141483B2

公开(公告)日：2006-11-28

申请号：US10757771

申请日：2004-01-14

申请人： Zheng Yuan ,  Reza Arghavani ,  Shankar Venkataraman

发明人： Zheng Yuan ,  Reza Arghavani ,  Shankar Venkataraman

IPC分类号： H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/76224 ,  H01L21/76822 ,  H01L21/76828 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes depositing a first portion of a film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas and the oxidizing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas) and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the conformal layer. The method also includes depositing a second portion of the film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas):(oxidizing gas) substantially constant throughout deposition of the bulk layer and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the bulk layer. The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.

摘要翻译： 填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底并且向腔室提供氧化气体流的腔室。 该方法还包括通过引起含硅处理气体和氧化气体之间的反应，将膜的第一部分沉积在间隙中作为基本上共形的层。 沉积保形层包括随着时间的推移，在沉积共形层的过程中，（含硅处理气体）:(氧化气体）的比例和室的调节范围为约200托至约760托的压力。 该方法还包括将膜的第二部分沉积为本体层。 沉积薄膜的第二部分包括在沉积主体层期间保持（含硅处理气体）:(氧化气体）的比例基本上恒定，并将室调节到约200托至约760的范围内的压力 托盘在整个堆积层的沉积中。 该方法还包括在小于约900℃的温度下将衬底暴露于一氧化二氮以使沉积的膜退火。

公开(公告)号：US20050208759A1

公开(公告)日：2005-09-22

申请号：US11126910

申请日：2005-05-11

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Nguyen ,  Shankar Venkataraman

IPC分类号： C23C16/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/505 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

公开(公告)号：US06855484B2

公开(公告)日：2005-02-15

申请号：US10375853

申请日：2003-02-25

申请人： Francimar Campana ,  Srinivas Nemani ,  Michael Chapin ,  Shankar Venkataraman

发明人： Francimar Campana ,  Srinivas Nemani ,  Michael Chapin ,  Shankar Venkataraman

IPC分类号： C23C16/36 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314 ,  H01L21/768 ,  C23C16/32

CPC分类号： H01L21/02167 ,  C23C16/36 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2221/1031

摘要： A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

摘要翻译： 提供一种形成用于集成电路的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和氮源的气体混合物反应而形成。 沉积的碳化硅层从氮源中掺入氮。

公开(公告)号：US06379492B2

公开(公告)日：2002-04-30

申请号：US09428140

申请日：1999-10-26

申请人： Won Bang ,  Chen-An Chen ,  Shankar Venkataraman ,  Ajay Bhatnagar

发明人： Won Bang ,  Chen-An Chen ,  Shankar Venkataraman ,  Ajay Bhatnagar

IPC分类号： C23F102

CPC分类号： C23C14/5806 ,  C23C14/0694 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32559

摘要： A corrosion resistant part comprising a protective coating formed upon a component part. The protective coating comprises magnesium fluoride, which is substantially pure and substantially dense. Preferably, the coating is at least about 99% pure and at least about 85% dense. For example, such a coating can be formed upon the component part at a temperature of at least about 250° C. and a pressure of not more than about 1×10−5 torr. The resulting coating is effective in protecting the surfaces of an aluminum nitride heater against corrosion within a fluorine-containing environment inside a chemical vapor deposition chamber.

摘要翻译： 一种耐腐蚀部件，包括形成在部件上的保护涂层。 保护性涂层包括氟化镁，其基本上纯且基本上致密。 优选地，涂层为至少约99％纯度且至少约85％致密。 例如，这样的涂层可以在至少约250℃的温度和不大于约1×10-5乇的压力下在组分部分上形成。 所得到的涂层有效地保护氮化铝加热器的表面免受化学气相沉积室内的含氟环境中的腐蚀。

公开(公告)号：US10283321B2

公开(公告)日：2019-05-07

申请号：US13251714

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

公开(公告)号：US08629067B2

公开(公告)日：2014-01-14

申请号：US12969877

申请日：2010-12-16

申请人： Jingmei Liang ,  Xiaolin Chen ,  Matthew L. Miller ,  Nitin K. Ingle ,  Shankar Venkataraman

发明人： Jingmei Liang ,  Xiaolin Chen ,  Matthew L. Miller ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337

摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.

摘要翻译： 描述形成电介质层的方法。 该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。 通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。 电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

公开(公告)号：US08569166B2

公开(公告)日：2013-10-29

申请号：US13152865

申请日：2011-06-03

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

公开(公告)号：US08497211B2

公开(公告)日：2013-07-30

申请号：US13490426

申请日：2012-06-06

申请人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

发明人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

IPC分类号： H01L21/311

CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224

摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.

摘要翻译： 在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。 此后，PSG膜的第一部分的一部分可被回蚀刻。 回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。 该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度 的PSG电影。