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159 条记录 (耗时 0.04 秒)

    Image forming apparatus
    61.
    发明授权
    Image forming apparatus 失效

    公开(公告)号：US06434349B1

    公开(公告)日：2002-08-13

    申请号：US09895187

    申请日：2001-07-02

    申请人： Yasushi Shimizu ,  Junichi Kato ,  Hiroshi Satoh ,  Masahiro Yoshida ,  Hiroyuki Oba

    发明人： Yasushi Shimizu ,  Junichi Kato ,  Hiroshi Satoh ,  Masahiro Yoshida ,  Hiroyuki Oba

    IPC分类号： G03G1502

    CPC分类号： G03G15/0225 ,  G03G2215/022

    摘要： An image forming apparatus includes an image bearing member; a charge member, contactable to the image bearing member, for electrically charging the image bearing member, the charge member being capable of being supplied with a voltage; developing means for developing an electrostatic image formed on the image bearing member with a developer; wherein the charge member is rotatable so as to provide a first peripheral speed difference between a surface of charge member and a surface of the image bearing member when the image bearing member is charged for image formation; wherein there is provided a cleaning period for transferring the developer from the charge member to the image bearing member with a second peripheral speed difference, which is smaller than the first peripheral speed difference, between the surface charge member of and surface of the image bearing member, when a charging operation for the image formation is not effected to the image bearing member.

    Flow passage closing mechanism of beverage pouring apparatus
    67.
    发明授权
    Flow passage closing mechanism of beverage pouring apparatus 失效
    饮料灌装设备流道关闭机构

    公开(公告)号：US5615802A

    公开(公告)日：1997-04-01

    申请号：US309975

    申请日：1994-09-20

    申请人： Morikatsu Horino ,  Hiroshi Satoh

    发明人： Morikatsu Horino ,  Hiroshi Satoh

    IPC分类号： B67D1/14 ,  B67D1/12 ,  B67D1/04

    CPC分类号： B67D1/1247 ,  Y10T137/7326

    摘要： A flow passage closing mechanism of a beverage pouring apparatus for supplying the beverage to a dispenser by pushing the beverage in the keg due to the pressure of gas introduced therein. The mechanism includes a first connecting portion to be connected to the keg, a descending tube connected to the first connecting portion, a floating ball movably inserted into the descending tube, a valve seat formed at a lower end portion of the descending tube, a separating mechanism for lifting the floating ball from the valve seat, and a second connecting portion to be connected to the dispenser. When beverage in the keg is used up, the flow passage closing mechanism closes the flow passage of the beverage pouring apparatus by pushing the floating ball to the valve seat. The flowing path is reopened by the separating mechanism.

    摘要翻译： 一种饮料倾倒装置的流路关闭机构，其用于通过将饮料引入小桶中，由于其中引入的气体的压力而将饮料供给到分配器。 该机构包括连接到小桶的第一连接部分，连接到第一连接部分的下降管，可移动地插入下降管中的浮动球，形成在下降管的下端部分的阀座，分离器 用于将浮球从阀座提升的机构，以及要连接到分配器的第二连接部分。 当小桶中的饮料用尽时，流动通道关闭机构通过将浮球推到阀座来关闭饮料倾倒装置的流动通道。 流动路径由分离机构重新打开。

    Method for production of SOI transistor device and SOI transistor device
    68.
    发明授权
    Method for production of SOI transistor device and SOI transistor device 失效
    生产SOI晶体管器件和SOI晶体管器件的方法

    公开(公告)号：US5493137A

    公开(公告)日：1996-02-20

    申请号：US427798

    申请日：1995-04-26

    申请人： Hiroshi Satoh ,  Yasunori Ohokubo ,  Takeshi Matsushita ,  Toshiyuki Nishihara ,  Makoto Hashimoto

    发明人： Hiroshi Satoh ,  Yasunori Ohokubo ,  Takeshi Matsushita ,  Toshiyuki Nishihara ,  Makoto Hashimoto

    IPC分类号： H01L29/772 ,  H01L21/762 ,  H01L23/544 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L23/544 ,  H01L21/76251 ,  H01L27/1082 ,  H01L27/10832 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S438/975 ,  Y10S438/977

    摘要： A wafer bonding method for forming a SOI structure comprising the steps of bringing wafers into proximity in a state with one wafer a slight, substantially uniform clearance away from the other wafer and pressing one point of at least one wafer of the two wafers against the other wafer. In another aspect of the invention, there is provided a method of positioning for photolithography using an alignment mark portions and/or a vernier portions formed on a SOI substrate, which comprises the step of removing semiconductor layer portions corresponding to the alignment mark portions and/or the vernier portions. In further another aspect of the invention, there is provided a new DRAM semiconductor device formed by using SOI structure, which comprises a new pattern of a strage node formed longitudinally along a word line. Further, there is provided a new DRAM semiconductor device formed by using SOI structure, which comprises a unique strage node having a conductive side wall.

    摘要翻译： 一种用于形成SOI结构的晶片接合方法，包括以下步骤：使晶片在与一个晶片的状态相接近的状态下与另一个晶片略微，基本上均匀的间隙，并将两个晶片的至少一个晶片的一个点压在另一个晶片上 晶圆。 在本发明的另一方面，提供了一种使用在SOI衬底上形成的对准标记部分和/或游标部分进行光刻定位的方法，其包括以下步骤：去除对准标记部分对应的半导体层部分和/ 或游标部分。 在本发明的另一方面，提供了一种通过使用SOI结构形成的新的DRAM半导体器件，其包括沿字线纵向形成的栅格节点的新图案。 此外，提供了通过使用SOI结构形成的新的DRAM半导体器件，其包括具有导电侧壁的独特的栅栏节点。

    Method bonding for production of SOI transistor device
    69.
    发明授权
    Method bonding for production of SOI transistor device 失效
    用于生产SOI晶体管器件的方法接合

    公开(公告)号：US5478782A

    公开(公告)日：1995-12-26

    申请号：US063641

    申请日：1993-05-20

    申请人： Hiroshi Satoh ,  Yasunori Ohokubo ,  Takeshi Matsushita ,  Toshiyuki Nishihara ,  Makoto Hashimoto

    发明人： Hiroshi Satoh ,  Yasunori Ohokubo ,  Takeshi Matsushita ,  Toshiyuki Nishihara ,  Makoto Hashimoto

    IPC分类号： H01L29/772 ,  H01L21/762 ,  H01L23/544 ,  H01L27/108 ,  H01L21/76

    CPC分类号： H01L23/544 ,  H01L21/76251 ,  H01L27/1082 ,  H01L27/10832 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S438/975 ,  Y10S438/977

    摘要： A wafer bonding method for forming a SOI structure comprising the steps of bringing wafers into proximity in a state with one wafer a slight, substantially uniform clearance away from the other wafer and pressing one point of at least one wafer of the two wafers against the other wafer. In another aspect of the invention, there is provided a method of positioning for photolithography using an alignment mark portions and/or a vernier portions formed on a SOI substrate, which comprises the step of removing semiconductor layer portions corresponding to the alignment mark portions and/or the vernier portions. In further another aspect of the invention, there is provided a new DRAM semiconductor device formed by using SOI structure, which comprises a new pattern of a strage node formed longitudinally along a word line. Further, there is provided a new DRAM semiconductor device formed by using SOI structure, which comprises a unique strage node having a conductive side wall.

    摘要翻译： 一种用于形成SOI结构的晶片接合方法，包括以下步骤：使晶片在与一个晶片的状态相接近的状态下与另一个晶片略微，基本上均匀的间隙，并将两个晶片的至少一个晶片的一个点压在另一个晶片上 晶圆。 在本发明的另一方面，提供了一种使用在SOI衬底上形成的对准标记部分和/或游标部分进行光刻定位的方法，其包括以下步骤：去除对准标记部分对应的半导体层部分和/ 或游标部分。 在本发明的另一方面，提供了一种通过使用SOI结构形成的新的DRAM半导体器件，其包括沿字线纵向形成的栅格节点的新图案。 此外，提供了通过使用SOI结构形成的新的DRAM半导体器件，其包括具有导电侧壁的独特的栅栏节点。