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公开(公告)号:US20180087695A1
公开(公告)日:2018-03-29
申请号:US15560104
申请日:2016-03-18
Applicant: Kongsberg Actuation Systems II, Inc.
Inventor: Laurentius Andreas Gerardus MENTINK
IPC: F16L11/12 , F16L11/10 , B32B1/08 , B32B7/02 , B32B5/10 , B32B27/32 , B32B27/34 , B32B27/08 , B29C47/06 , B32B25/08
CPC classification number: F16L11/125 , B29C47/065 , B29K2023/12 , B29K2023/16 , B29K2105/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0016 , B29L2023/005 , B32B1/08 , B32B5/10 , B32B7/02 , B32B25/08 , B32B25/16 , B32B27/08 , B32B27/18 , B32B27/304 , B32B27/32 , B32B27/34 , B32B2264/108 , B32B2274/00 , B32B2307/202 , B32B2307/3065 , B32B2323/10 , B32B2323/16 , B32B2377/00 , B32B2597/00 , F16L11/10
Abstract: A flame resistant hose assembly is disclosed. The hose assembly comprises a tubular inner layer and a flame resistant layer. The tubular inner layer has an interior radial surface and an exterior radial surface and defines a longitudinal axis. The flame resistant layer is disposed about and covers the exterior radial surface of the tubular inner layer. The flame resistant layer is formed N from a flame resistant material comprising a polymeric binder and expandable graphite in an amount of from about 5 to about 40 parts by weight based on 100 parts by weight of the flame resistant material. The flame resistant layer expands when heated to a temperature of about 220° C. or greater and maintains a post-expansion coverage of the exterior radial surface of the tubular inner layer of greater than about 95%.
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公开(公告)号:US20180086671A1
公开(公告)日:2018-03-29
申请号:US15564645
申请日:2016-04-08
Applicant: ARQLITE SPC
Inventor: Sebastian SAJOUX
IPC: C04B30/00 , C04B18/20 , C04B14/06 , C04B18/02 , C08J11/06 , B29C47/00 , B29B13/10 , B29B7/00 , B28C5/00 , B28B3/20 , E01C3/00
CPC classification number: C04B30/00 , B28B3/20 , B28C5/003 , B29B7/002 , B29B13/10 , B29C48/0022 , B29C48/022 , B29K2105/16 , B29K2105/26 , C04B14/06 , C04B18/027 , C04B18/20 , C04B28/02 , C04B2111/00612 , C04B2111/0075 , C04B2201/20 , C08J11/06 , E01C3/003 , Y02W30/96 , C04B20/0008 , C04B20/026 , C04B20/04 , C04B20/1074 , C04B20/1077
Abstract: Disclosed herein is an artificial stone comprised of a first waste plastic material and a second waste plastic material, wherein the first and/or second waste plastic material is a non-recyclable or a recyclable plastic material. A method of manufacturing the artificial stone is also disclosed. The artificial stone may be used, for example, as an aggregate in a concrete mix or as a filler on a road laying base or sub-base.
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公开(公告)号:US09923096B2
公开(公告)日:2018-03-20
申请号:US15474096
申请日:2017-03-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: John B. Campi, Jr. , Robert J. Gauthier, Jr. , Rahul Mishra , Souvick Mitra , Mujahid Muhammad
IPC: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/78 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/66
CPC classification number: H01L29/7856 , B29C37/0025 , B29C47/065 , B29C47/56 , B29K2023/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0007 , B29L2009/003 , B29L2009/005 , B29L2031/34 , B32B3/08 , B32B7/02 , B32B27/00 , B32B27/08 , B32B27/28 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2262/106 , B32B2264/105 , B32B2264/12 , B32B2270/00 , B32B2274/00 , B32B2307/202 , B32B2307/204 , B32B2307/206 , B32B2307/518 , B32B2307/732 , B32B2457/16 , H01G4/005 , H01G4/14 , H01G4/228 , H01G4/30 , H01G4/33 , H01L21/26513 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L21/823493 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/1045 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66681 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/66795 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7816 , H01L29/7825 , H01L29/7851 , H01L2029/7858
Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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公开(公告)号:US20180076328A1
公开(公告)日:2018-03-15
申请号:US15819486
申请日:2017-11-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: John B. CAMPI, JR. , Robert J. GAUTHIER, JR. , Rahul MISHRA , Souvick MITRA , Mujahid MUHAMMAD
CPC classification number: H01L29/7856 , B29C37/0025 , B29C48/21 , B29C48/49 , B29K2023/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0007 , B29L2009/003 , B29L2009/005 , B29L2031/34 , B32B3/08 , B32B7/02 , B32B27/00 , B32B27/08 , B32B27/28 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2262/106 , B32B2264/105 , B32B2264/12 , B32B2270/00 , B32B2274/00 , B32B2307/202 , B32B2307/204 , B32B2307/206 , B32B2307/518 , B32B2307/732 , B32B2457/16 , H01G4/005 , H01G4/14 , H01G4/228 , H01G4/30 , H01G4/33 , H01L21/26513 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L21/823493 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/1045 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66681 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/66795 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7816 , H01L29/7825 , H01L29/7851 , H01L2029/7858
Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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公开(公告)号:US20180072871A1
公开(公告)日:2018-03-15
申请号:US15814049
申请日:2017-11-15
Applicant: International Business Machines Corporation
Inventor: Sarah K. CZAPLEWSKI , Joseph KUCZYNSKI , Jason T. WERTZ , Jing ZHANG
IPC: C08K9/06 , B29C45/40 , B29C70/64 , B29C45/00 , B29K509/02 , B29K105/16
CPC classification number: C08K9/06 , B29C45/0001 , B29C45/40 , B29C70/64 , B29K2105/16 , B29K2509/02 , B29K2905/00
Abstract: A composition of matter includes a particle, a resin bonding functionality bonded to a first portion of the particle, and a lubricating functionality bonded to a second portion of the particle.
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公开(公告)号:US20180050390A1
公开(公告)日:2018-02-22
申请号:US15803076
申请日:2017-11-03
Applicant: Desktop Metal, Inc.
Inventor: Michael Andrew Gibson , Jonah Samuel Myerberg , Ricardo Fulop , Matthew David Verminski , Richard Remo Fontana , Christopher Allan Schuh , Yet-Ming Chiang , Anastasios John Hart
IPC: B22F3/00 , B28B1/00 , B22F3/10 , B29K105/16 , B29K505/00 , B29K507/04
CPC classification number: B22F3/1021 , B22F1/0059 , B22F3/008 , B22F3/1055 , B22F3/22 , B22F3/24 , B22F7/02 , B22F7/04 , B22F2003/1057 , B22F2003/1058 , B22F2003/242 , B22F2007/042 , B22F2998/10 , B22F2999/00 , B28B1/001 , B29C64/10 , B29C64/106 , B29C64/112 , B29C64/147 , B29C64/153 , B29C64/165 , B29C64/20 , B29C64/264 , B29C64/268 , B29C64/386 , B29C64/40 , B29K2105/16 , B29K2505/00 , B29K2507/04 , B29K2509/02 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/00 , B33Y50/02 , B33Y70/00 , B33Y80/00 , Y02P10/295
Abstract: Support structures are used in certain additive fabrication processes to permit fabrication of a greater range of object geometries. For additive fabrication processes with materials that are subsequently sintered into a final part, a printer is configured to further fabricate an interface layer between the object and the support structure in order to inhibit bonding between adjacent surfaces of the support structure and the object during sintering.
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公开(公告)号:US20180047509A1
公开(公告)日:2018-02-15
申请号:US15724803
申请日:2017-10-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: John B. CAMPI, JR. , Robert J. GAUTHIER, JR. , Rahul MISHRA , Souvick MITRA , Mujahid MUHAMMAD
CPC classification number: H01L29/7856 , B29C37/0025 , B29C48/21 , B29C48/49 , B29K2023/12 , B29K2105/16 , B29K2507/04 , B29K2995/0005 , B29K2995/0007 , B29L2009/003 , B29L2009/005 , B29L2031/34 , B32B3/08 , B32B7/02 , B32B27/00 , B32B27/08 , B32B27/28 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2262/106 , B32B2264/105 , B32B2264/12 , B32B2270/00 , B32B2274/00 , B32B2307/202 , B32B2307/204 , B32B2307/206 , B32B2307/518 , B32B2307/732 , B32B2457/16 , H01G4/005 , H01G4/14 , H01G4/228 , H01G4/30 , H01G4/33 , H01L21/26513 , H01L21/266 , H01L21/823412 , H01L21/823431 , H01L21/823475 , H01L21/823481 , H01L21/823493 , H01L27/0886 , H01L29/0649 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/086 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/1045 , H01L29/1095 , H01L29/4236 , H01L29/42376 , H01L29/4238 , H01L29/42392 , H01L29/66681 , H01L29/66704 , H01L29/66712 , H01L29/66734 , H01L29/66795 , H01L29/7802 , H01L29/7809 , H01L29/7811 , H01L29/7816 , H01L29/7825 , H01L29/7851 , H01L2029/7858
Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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公开(公告)号:US09879925B2
公开(公告)日:2018-01-30
申请号:US14906707
申请日:2013-08-05
Applicant: WORLDTUBE CO. LTD
Inventor: Young-Su Park
IPC: F28F21/02 , B29C41/02 , F28F13/18 , H05K7/20 , B29B9/12 , B29B13/08 , B29C35/02 , B29C65/48 , B32B5/16 , B32B5/22 , B32B5/30 , B32B7/12 , B29K1/00 , B29K105/16 , B29K507/04 , B29L31/18
CPC classification number: F28F21/02 , B29B9/12 , B29B13/08 , B29C35/02 , B29C41/02 , B29C65/48 , B29K2001/08 , B29K2105/16 , B29K2507/04 , B29K2995/0013 , B29L2031/18 , B32B5/16 , B32B5/22 , B32B5/30 , B32B7/12 , B32B2264/108 , B32B2264/12 , B32B2307/302 , B32B2457/00 , B32B2457/08 , B32B2457/202 , B32B2457/206 , F28F13/18 , H05K7/20481
Abstract: To effectively dissipate heat discharged from various electronic or mechanical components, a high-performance ultra-thin heat dissipation sheet with high thermal conductivity and thermal emissivity by using a graphene/graphite nanoplate/carbon nanotube/nano-metal complex that forms a high-content 3D-structured complex that is stably dispersed, and a method of manufacturing the same, is provided. The method includes preparing a first heat dissipation film by sintering a composition for dissipating heat including a graphene/graphite nanoplate/carbon nanotube/nano-metal complex dispersion solution and a binder, and forming a second heat dissipation film on one surface or two opposite surfaces of the first heat dissipation film by using a graphene adhesive including the graphene/graphite nanoplate/carbon nanotube/nano-metal complex dispersion solution and an adhesive. A heat dissipation sheet according to the present invention may be utilized as a material with heat dissipation properties constituting a heat sink alone or with other materials with heat dissipation properties.
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公开(公告)号:US09879128B2
公开(公告)日:2018-01-30
申请号:US15064894
申请日:2016-03-09
Applicant: International Business Machines Corporation
Inventor: Sarah K. Czaplewski , Joseph Kuczynski , Jason T. Wertz , Jing Zhang
IPC: C08K9/06 , B29C45/00 , B29C45/40 , B29C70/64 , B29K105/16 , B29K509/02
CPC classification number: C08K9/06 , B29C45/0001 , B29C45/40 , B29C70/64 , B29K2105/16 , B29K2509/02 , B29K2905/00
Abstract: A composition of matter includes a particle, a resin bonding functionality bonded to a first portion of the particle, and a lubricating functionality bonded to a second portion of the particle.
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公开(公告)号:US09877836B2
公开(公告)日:2018-01-30
申请号:US14796564
申请日:2015-07-10
Applicant: Warsaw Orthopedic, Inc.
Inventor: Benjamin T. Reves , David S. Scher , Susan J. Drapeau , Roger E. Harrington , Jerbrena C. Jacobs
IPC: A61F2/28 , A61L27/54 , A61L27/56 , A61L27/44 , B29C41/00 , B29C41/22 , A61L27/46 , B29B7/00 , B29K105/16 , B29K509/02 , B29L31/00
CPC classification number: A61F2/2846 , A61F2002/2835 , A61F2210/0004 , A61L27/446 , A61L27/46 , A61L27/54 , A61L27/56 , A61L2300/222 , A61L2430/02 , A61L2430/38 , B29B7/002 , B29C41/003 , B29C41/22 , B29K2105/16 , B29K2509/02 , B29K2995/006 , B29L2031/7532 , C08L89/06
Abstract: Provided is a compression resistant implant configured to fit at or near a bone defect to promote bone growth, the compression resistant implant comprising porous ceramic particles in a biodegradable polymer, and an oxysterol disposed in or on the compression resistant implant. Methods of making and use are further provided.
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