公开(公告)号：US10043880B2

公开(公告)日：2018-08-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  C23C16/06 ,  C23C16/455 ,  C23C16/40 ,  H01L21/285 ,  H01L21/324 ,  H01L21/3215 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20170352737A1

公开(公告)日：2017-12-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  H01L29/66 ,  H01L21/3215 ,  H01L21/324 ,  C23C16/06 ,  H01L21/285 ,  C23C16/455 ,  H01L29/78 ,  C23C16/40 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US09816203B2

公开(公告)日：2017-11-14

申请号：US14717919

申请日：2015-05-20

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg

IPC: C30B23/02 ,  C30B29/32 ,  C30B1/02 ,  C30B25/18 ,  C30B29/68 ,  C30B1/04 ,  C30B29/24 ,  H01L21/02

CPC classification number: C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

Abstract: Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

公开(公告)号：US09679808B2

公开(公告)日：2017-06-13

申请号：US14988374

申请日：2016-01-05

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Antti Niskanen ,  Marko Tuominen

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/7685 ,  C23C16/0227 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/02068 ,  H01L21/02697 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76883

Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.

公开(公告)号：US09587307B2

公开(公告)日：2017-03-07

申请号：US13950049

申请日：2013-07-24

Applicant: ASM International N.V.

Inventor： Suvi P. Haukka ,  Marko J. Tuominen ,  Antti Rahtu

IPC: C23C16/08 ,  C23C16/02 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/08 ,  C23C16/0218 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/28562

Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.

Abstract translation: 本发明一般涉及通过原子层沉积来增强在衬底上沉积贵金属薄膜的方法。 使用气态卤化物或金属有机化合物进行处理减少了在特定表面上沉积贵金属的孵育时间。 该方法可用于促进选择性沉积。 例如，可以通过用卤化物反应物预处理来提高贵金属在高k材料上相对于绝缘体的选择性沉积。 此外，可以使用卤化物处理以避免沉积在反应室的石英壁上。

公开(公告)号：US20170018433A1

公开(公告)日：2017-01-19

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/321 ,  H01L21/3215

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/3215 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76886 ,  H01L29/456 ,  H01L29/665 ,  H01L29/78

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

Abstract translation: 一方面，提供了硅化和锗化的方法。 在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。 在界面层上形成金属氧化物。 退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。 另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。 在其它实施例中，直接沉积镍，并且不使用界面层。 另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。 在一些实施例中，镍薄膜通过ALD沉积。 镍薄膜可以直接用于硅化和锗化工艺。

公开(公告)号：US20160031919A1

公开(公告)日：2016-02-04

申请号：US14882083

申请日：2015-10-13

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami Pore ,  Timo Hatanpaa ,  Mikko Ritala ,  Markku Leskelä

IPC: C07F11/00

CPC classification number: C07F11/005 ,  C23C16/306 ,  C23C16/45553 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  Y02P20/582

Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Abstract translation: 提供了用于形成诸如Sb-Te，Ge-Te，Ge-Sb-Te，Bi-Te和Zn-Te薄膜的Te含量薄膜的原子层沉积（ALD）工艺。 还提供了用于形成含Se的薄膜的ALD工艺，例如Sb-Se，Ge-Se，Ge-Sb-Se，Bi-Se和Zn-Se薄膜。 优选使用式（Te，Se）（SiR 1 R 2 R 3）2的Te和Se前体，其中R 1，R 2和R 3是烷基。 还提供了用于合成这些Te和Se前体的方法。 还提供了在相变存储器件中使用Te和Se薄膜的方法。

公开(公告)号：US20150315703A1

公开(公告)日：2015-11-05

申请号：US14557874

申请日：2014-12-02

Applicant: ASM International N.V.

Inventor： Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/38 ,  C23C16/34 ,  C23C16/32

CPC classification number: C23C16/45525 ,  C23C16/32 ,  C23C16/34 ,  C23C16/38 ,  C23C16/40 ,  H01L21/28079 ,  H01L29/517 ,  H01L29/66583

Abstract: Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.

Abstract translation: 提供了用于通过气相沉积工艺在衬底上选择性地沉积包括一种或多种贵金属的薄膜的工艺。 在一些实施例中，原子层沉积（ALD）工艺用于在高k材料，金属，金属氮化物或其它导电金属化合物上沉积含有贵金属的薄膜，同时避免沉积在诸如氧化硅的下部k绝缘体上。 例如在栅电极的形成中，可以使用在第一表面上沉积的能力，例如高k材料，同时避免沉积在第二表面上，例如氧化硅或氮化硅表面。

公开(公告)号：US09153441B2

公开(公告)日：2015-10-06

申请号：US14184116

申请日：2014-02-19

Applicant: ASM International. N.V.

Inventor： Noboru Takamure ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Antti Niskanen ,  Suvi Haukka ,  Ryu Nakano ,  Kunitoshi Namba

IPC: H01L21/225 ,  H01L21/02 ,  H01L21/22 ,  H01L21/324

CPC classification number: H01L21/02321 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/324 ,  H01L29/66803

Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Abstract translation: 本公开涉及通过原子层沉积工艺沉积诸如掺杂氧化硅膜的掺杂剂膜。 在一些实施例中，反应空间中的衬底与硅前体和掺杂剂前体的脉冲接触，使得硅前体和掺杂剂前体吸附在衬底表面上。 氧等离子体用于将吸附的硅前体和掺杂剂前体转化为掺杂的氧化硅。

公开(公告)号：US20150162183A1

公开(公告)日：2015-06-11

申请号：US14570668

申请日：2014-12-15

Applicant: ASM INTERNATIONAL N.V.

Inventor： VILJAMI PORE ,  MIKKO RITALA ,  MARKKU LESKELA

IPC: H01L21/02 ,  H01L49/02

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75

Abstract: The present disclosure relates to the deposition of conductive titanium oxide films by atomic layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD processes comprising titanium oxide deposition cycles and dopant oxide deposition cycles and are subsequently annealed to produce a conductive crystalline anatase film. Doped titanium oxide films may also be deposited by first depositing a doped titanium nitride thin film by ALD processes comprising titanium nitride deposition cycles and dopant nitride deposition cycles and subsequently oxidizing the nitride film to form a doped titanium oxide film. The doped titanium oxide films may be used, for example, in capacitor structures.