公开(公告)号：US20250133866A1

公开(公告)日：2025-04-24

申请号：US18730604

申请日：2023-02-01

Applicant: The Regents of the University of California

Inventor： Philip Chan ,  Hsun-Ming Chang ,  Vincent Rienzi ,  Shuji Nakamura

IPC: H10H20/01 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H10H20/815 ,  H10H20/825

Abstract: A method of growing III-nitride-based devices, such as light emitting diodes (LEDs) and laser diodes (LDs) on or above a strain relaxed template (SRT). The SRT uses a thin, thermally decomposed, InGaN underlayer, which is referred to as a decomposition layer (DL). Above the DL is a n-type GaN or low composition InGaN decomposition stop layer (DSL). A buffer layer comprising an n-type InGaN/GaN superlattice (SL) is then grown. For an LD structure. an n-type waveguide layer comprising a second n-type InGaN/GaN SL is then grown. followed by an active region, a p-type electron blocking layer (EBL), a p-type waveguide layer comprising a p-type InGaN/GaN SL, and p-type GaN or p-type InGaN layers. For an LED structure, the waveguide layers may be omitted. In this disclosure, AlGaN means AlxGa(1-x)N with 1≥x≥0 and InGaN means InxGa(1-x)N with 1≥x≥0.

公开(公告)号：US20240371912A1

公开(公告)日：2024-11-07

申请号：US18263566

申请日：2022-02-22

Applicant: The Regents of the University of California

Inventor： Panpan Li ,  Hongjian Li ,  Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: A method of fabricating a plurality of monolithic, cascaded, multiple color III-nitride light-emitting diodes (LEDs) with independent junction control, wherein: each of the LEDs is comprised of at least an n-type III-nitride layer, a III-nitride emitting layer, and a p-type III-nitride layer; at least two of the LEDs are separated by an n-type tunnel junction (TJ) insertion layer grown by selective area growth on or above the p-type III-nitride layer of one of the LEDs; the p-type III-nitride layer of one of the LEDs and the n-type tunnel junction insertion layer form a tunnel junction; and the p-type III-nitride layer of one of the LEDs is at least partially covered by the n-type tunnel junction insertion layer.

公开(公告)号：US20240266165A1

公开(公告)日：2024-08-08

申请号：US18567162

申请日：2022-06-03

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars

IPC: H01L21/02

CPC classification number: H01L21/02334 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

Abstract: A III-V or II-VI compound based device is fabricated having one or more layers with an in-plane lattice constant or strain that is at least 20% biaxially relaxed, preferably more than 20% biaxially relaxed, more preferably 50% or more biaxially relaxed, and most preferably at least 70% biaxially relaxed. A III-V or II-VI compound based decomposition stop layer is created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, and a temperature increase decomposes the III-V or II-VI compound based decomposition layer. A III-V or II-VI compound based device structure is grown on or above the III-V or II-VI compound based decomposition stop layer.

公开(公告)号：US20230268462A1

公开(公告)日：2023-08-24

申请号：US18014541

申请日：2021-07-09

Applicant: The Regents of the University of California

Inventor： Christian J. Zollner ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/075 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L25/0753 ,  H01L33/007

Abstract: A fully transparent UV LED or far-UV LED is disclosed, in which all semiconductor layers except the active region are transparent to the radiation emitted in the active region. The key technology enabling this invention is the transparent tunnel junction, which replaces the optically absorbing p-GaN and metal mirror p-contact currently found in all commercially available UV LEDs. The tunnel junction also enables the use of a second n-AlGaN current spreading layer above the active region (on the p-side of the device) similar to the current spreading layer already found below the active region (on the n-side of the device). Therefore, small-area and/or remote p- and n-contacts can be used, and light can be extracted from both the top-side and bottom-side of the device. This fully transparent semiconductor device can then be packaged using transparent materials into a fully transparent UV LED or far-UV LED with high brightness and efficiency.

公开(公告)号：US11677044B2

公开(公告)日：2023-06-13

申请号：US17205249

申请日：2021-03-18

Applicant: The Regents of the University of California

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L33/60 ,  H01L33/50 ,  H01L33/54 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/32 ,  H01L33/60 ,  H01L33/00 ,  H01L33/06 ,  H01L33/50 ,  H01L33/54 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

公开(公告)号：US11164997B2

公开(公告)日：2021-11-02

申请号：US16320924

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/32 ,  H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01S5/343

Abstract: A III-Nitride LED which utilizes n-type III-Nitride layers for current spreading on both sides of the device. A multilayer dielectric coating is used underneath the wire bond pads, both LED contacts are deposited in one step, and the p-side wire bond pad is moved off of the mesa. The LED has a wall plug efficiency or External Quantum Efficiency (EQE) over 70%, a fractional EQE droop of less than 7% at 20 A/cm2 drive current and less than 15% at 35 A/cm2 drive current. The LEDs can be patterned into an LED array and each LED can have an edge dimension of between 5 and 50 μm. The LED emission wavelength can be below 400 nm and aluminum can be added to the n-type III-Nitride layers such that the bandgap of the n-type III-nitride layers is larger than the LED emission photon energy.

公开(公告)号：US10593854B1

公开(公告)日：2020-03-17

申请号：US16570754

申请日：2019-09-13

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/58 ,  G02B19/00 ,  H01L33/22 ,  H01L33/60 ,  H01L33/38

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

公开(公告)号：US20180152004A1

公开(公告)日：2018-05-31

申请号：US15880999

申请日：2018-01-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/343 ,  H01L31/036

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：US20180013035A1

公开(公告)日：2018-01-11

申请号：US15698181

申请日：2017-09-07

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, JR. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/00 ,  H01S5/343 ,  H01L21/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

公开(公告)号：US09859464B2

公开(公告)日：2018-01-02

申请号：US14757937

申请日：2015-12-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie Fellows DeMille ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/44 ,  H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.