MICRO DEVICE ARRAY
    72.
    发明申请
    MICRO DEVICE ARRAY 有权
    微型设备阵列

    公开(公告)号:US20130128585A1

    公开(公告)日:2013-05-23

    申请号:US13708704

    申请日:2012-12-07

    Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

    Abstract translation: 描述了微型发光二极管(LED)和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层,金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

    Compliant micro device transfer head array with metal electrodes
    79.
    发明授权
    Compliant micro device transfer head array with metal electrodes 有权
    具有金属电极的符合微器件传输头阵列

    公开(公告)号:US09236815B2

    公开(公告)日:2016-01-12

    申请号:US13710442

    申请日:2012-12-10

    CPC classification number: H02N13/00 B81C99/002 Y10T279/23

    Abstract: Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.

    Abstract translation: 描述了合适的单极和双极微器件转移头阵列和从SOI衬底形成的方法。 在一个实施例中,柔性传送头阵列形成在基底基板上并且可朝向基底基板偏转,并且图案化金属层包括金属互连层,金属互连层与柔性传送头阵列中的金属电极阵列电连接。

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