公开(公告)号：US07861668B2

公开(公告)日：2011-01-04

申请号：US11931585

申请日：2007-10-31

申请人： Kazuyuki Toyoda ,  Yasuhiro Inokuchi ,  Motonari Takebayashi ,  Tadashi Kontani ,  Nobuo Ishimaru

发明人： Kazuyuki Toyoda ,  Yasuhiro Inokuchi ,  Motonari Takebayashi ,  Tadashi Kontani ,  Nobuo Ishimaru

IPC分类号： C23C16/00

CPC分类号： H01L21/02274 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32834 ,  H01J2237/332 ,  H01L21/02183 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/205 ,  H01L21/31604 ,  H01L21/67109 ,  H01L21/77

摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

公开(公告)号：US20100304567A1

公开(公告)日：2010-12-02

申请号：US12801127

申请日：2010-05-24

申请人： Masanori SAKAI ,  Tatsuyuki SAITO

发明人： Masanori SAKAI ,  Tatsuyuki SAITO

IPC分类号： H01L21/3205 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76862

摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.

摘要翻译： 通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在 在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

公开(公告)号：US20100227276A1

公开(公告)日：2010-09-09

申请号：US12717389

申请日：2010-03-04

申请人： Norikazu MIZUNO

发明人： Norikazu MIZUNO

IPC分类号： G03F7/20

CPC分类号： G03F7/40 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45546 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/31111

摘要： In a method of manufacturing a semiconductor device, a protection film can be formed using a double exposure technology to increase a developer resistance of the protection film without increasing the thickness of the protection film for realizing fine patterning. The method comprises forming a protection film on a first resist pattern formed on a substrate; and forming a second resist pattern on the protection film between parts of the first resist pattern. The protection film is formed in at least two layers by using different methods.

摘要翻译： 在制造半导体器件的方法中，可以使用双重曝光技术形成保护膜，以增加保护膜的显影剂电阻，而不增加用于实现精细图案化的保护膜的厚度。 该方法包括在形成在基板上的第一抗蚀剂图案上形成保护膜; 以及在所述第一抗蚀剂图案的部分之间的所述保护膜上形成第二抗蚀剂图案。 通过使用不同的方法在至少两层中形成保护膜。

公开(公告)号：US07767594B2

公开(公告)日：2010-08-03

申请号：US11990451

申请日：2007-01-17

申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

IPC分类号： H01L21/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中以与水相对于氢的比例为2×10-1或更低的方式在400℃下加热基板，并且向第一反应材料供给氢气和水。

公开(公告)号：US07732350B2

公开(公告)日：2010-06-08

申请号：US11634043

申请日：2006-12-04

申请人： Albert Hasper ,  Gert-Jan Snijders ,  Lieve Vandezande ,  Marinus J. De Blank ,  Radko Gerard Bankras

发明人： Albert Hasper ,  Gert-Jan Snijders ,  Lieve Vandezande ,  Marinus J. De Blank ,  Radko Gerard Bankras

IPC分类号： H01L21/469

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/28556

摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

摘要翻译： 使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器中形成氮化钛（TiN）膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器，或者NH 3可以连续流入反应器中，同时以脉冲引入TiCl 4。 所得到的TiN膜具有低电阻率和均匀性。

公开(公告)号：US20100130024A1

公开(公告)日：2010-05-27

申请号：US12625712

申请日：2009-11-25

申请人： Yushin TAKASAWA ,  Hajime Karasawa ,  Yoshiro Hirose

发明人： Yushin TAKASAWA ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： H01L21/465

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus. The method includes: forming a first layer including a first element on a substrate by supplying a gas containing the first element; forming a second layer including first and second elements by supplying a gas containing the second element to modify the first layer; and forming a thin film having a predetermined thickness by setting the forming of the first layer and the forming of the second layer to one cycle and repeating the cycle at least once. Pressure, or pressure and a gas supply time in one process of the forming of the first layer and the forming of the second layer are controlled to be higher or longer, or lower or shorter than pressure, or pressure and a time in the one process when the thin film having a stoichiometric composition is formed.

摘要翻译： 提供一种半导体器件和衬底处理设备的制造方法。 该方法包括：通过供给含有第一元件的气体，在基板上形成包括第一元件的第一层; 通过提供含有第二元素的气体来形成包括第一和第二元素的第二层，以修饰第一层; 以及通过将第一层的形成和第二层的形成设定为一个循环并重复该循环至少一次来形成具有预定厚度的薄膜。 在形成第一层和形成第二层的一个过程中的压力或压力和气体供应时间被控制为更高或更长，或者低于或低于压力或压力和一个过程中的时间 当形成具有化学计量组成的薄膜时。

公开(公告)号：US07691757B2

公开(公告)日：2010-04-06

申请号：US11766718

申请日：2007-06-21

申请人： Suvi P. Haukka ,  Tanja Claasen ,  Peter Zagwijn

发明人： Suvi P. Haukka ,  Tanja Claasen ,  Peter Zagwijn

IPC分类号： H01L21/31 ,  C23C16/34

CPC分类号： C23C16/34 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/32051 ,  H01L21/32053

摘要： Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300° C. and about 700° C.

摘要翻译： 提供了用于复合氮化物（例如三元金属氮化物）的脉冲化学气相沉积（CVD）的方法。 金属卤化物前体的脉冲彼此分离，并且在金属卤化物前体脉冲以及金属卤化物前体脉冲之间提供含氮前体。 可以以同时脉冲，交替地或以各种顺序提供两种不同的金属卤化物前体。 含氮前体，如氨，可以与金属卤化物前体和金属卤化物前体同时提供，或者在整个沉积过程中连续提供。 温度可以保持在约300℃至约700℃之间

公开(公告)号：US20100068893A1

公开(公告)日：2010-03-18

申请号：US12559616

申请日：2009-09-15

申请人： HITOSHI KATO ,  Kazuteru Obara

发明人： HITOSHI KATO ,  Kazuteru Obara

IPC分类号： H01L21/302 ,  C23C16/00 ,  B05C11/10

CPC分类号： H01L21/68764 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45546 ,  C23C16/45551 ,  H01L21/67757 ,  H01L21/68771

摘要： A film deposition apparatus includes a reaction chamber evacuatable to a reduced pressure; a substrate holding portion rotatably provided in the reaction chamber and configured to hold a substrate; a first reaction gas supplying portion configured to flow a first reaction gas from an outer edge portion toward a center portion of the substrate holding portion; a second reaction gas supplying portion configured to flow a second reaction gas from an outer edge portion toward a center portion of the substrate holding portion; a separation gas supplying portion configured to flow a separation gas from an outer edge portion toward a center portion of the substrate holding portion, the separation gas supplying portion being arranged between the first and the second gas supplying portions; and an evacuation portion located in the center portion of the substrate holding portion in order to evacuate the first, the second, and the separation gases.

摘要翻译： 膜沉积设备包括可以减压排出的反应室; 基板保持部，可旋转地设置在所述反应室中并且构造成保持基板; 第一反应气体供给部构造成使第一反应气体从外缘部朝向所述基板保持部的中心部流动; 第二反应气体供给部构造成使第二反应气体从外缘部朝向所述基板保持部的中心部流动; 分离气体供给部，被配置为使分离气体从所述基板保持部的外缘部向中心部流动，所述分离气体供给部配置在所述第一和第二气体供给部之间; 以及位于基板保持部的中央部的排气部，以排出第一，第二和分离气体。

公开(公告)号：US20100035440A1

公开(公告)日：2010-02-11

申请号：US12536061

申请日：2009-08-05

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

IPC分类号： H01L21/465

CPC分类号： H01L21/02238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45519 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/02255 ,  H01L21/31662

摘要： A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.

摘要翻译： 一种基板处理装置，包括：反应管，被配置为处理多个基板; 加热器，其构造成加热反应管的内部; 保持器，其构造成在所述反应管内布置和保持所述多个基板; 第一喷嘴，其设置在与配置有多个基板的基板配置区域对应的区域中，并且构造成将来自该区域的多个位置的含氢气体供给到反应管中; 第二喷嘴，其设置在与所述基板配置区域对应的区域中，并且被配置为将所述区域的多个位置的含氧气体供应到所述反应管中; 排气口，其构造成排出反应管的内部; 以及压力控制器，被配置为将所述反应管内的压力控制为低于大气压力，其中所述第一喷嘴设置有多个第一气体喷射孔，并且所述第二喷嘴设置有至少至少两个第二气体喷射孔 所述多个基板使得所述第二气体喷射孔至少对应于各个基板。

公开(公告)号：US20100035439A1

公开(公告)日：2010-02-11

申请号：US12536913

申请日：2009-08-06

申请人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

发明人： Yoshihiro Ishida ,  Katsushige Harada ,  Takuya Sugawara

IPC分类号： H01L21/31

CPC分类号： H01L21/31641 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45546

摘要： The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

摘要翻译： 本发明包括将待加工物体插入可维持真空的处理容器中，并使处理容器真空; 通过在处理容器中交替地向处理容器供给锆源和氧化剂多次，并在衬底上交替地供给硅源和氧化剂的步骤，从而在衬底上形成ZrO 2膜的顺序 进行一次或多次，其中调节每个序列的执行次数，使得膜的Si浓度为约1atm％至约4atm％; 并且通过进行一个或多个循环的成膜顺序，形成具有预定厚度的氧化锆基膜，其中一个循环表示每个ZrO 2成膜顺序和SiO 2成膜顺序重复调节次数 表演。