公开(公告)号：US20060249845A1

公开(公告)日：2006-11-09

申请号：US11386106

申请日：2006-03-22

申请人： Nobuyuki Takai ,  Takuya Suzuki ,  Yuji Tsukada

发明人： Nobuyuki Takai ,  Takuya Suzuki ,  Yuji Tsukada

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05138 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/48463 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015

摘要： The invention provides a semiconductor device with a bonding pad made of a wiring layer including aluminum and its manufacturing method that enhance the yield of the semiconductor device. The method of manufacturing the semiconductor device of the invention includes removing a portion of an antireflection layer (e.g. made of a titanium alloy) formed on an uppermost second wiring layer (e.g. made of aluminum) on a semiconductor substrate by etching, forming a passivation layer covering the antireflection layer and a portion of the second wiring layer where the antireflection layer is not formed and having an opening exposing the other portion of the second wiring layer, and dividing the semiconductor substrate into a plurality of semiconductor dice by dicing. These processes can prevent the antireflection layer from being exposed in the opening, and this can prevent a component of the second wiring layer from being eluted due to cell reaction between the second wiring layer and the antireflection layer as has been seen in the conventional art.

摘要翻译： 本发明提供一种半导体器件，其具有由包括铝的布线层制成的焊盘及其制造方法，其提高半导体器件的产量。 制造本发明的半导体器件的方法包括通过蚀刻在半导体衬底上去除形成在最上层的第二布线层（例如由铝制成的）的抗反射层（例如由钛合金制成）的一部分，形成钝化层 覆盖防反射层和第二布线层的不形成防反射层的部分，并且具有暴露第二布线层的另一部分的开口，并且通过切割将半导体基板分割成多个半导体管芯。 这些处理可以防止防反射层暴露在开口中，并且这可以防止第二布线层的部件由于第二布线层和抗反射层之间的电池反应而被洗脱，如在现有技术中已经看到的那样。

公开(公告)号：US20060082000A1

公开(公告)日：2006-04-20

申请号：US11240885

申请日：2005-09-30

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L21/7684 ,  H01L24/03 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for an integrated circuit, which has copper interconnecting metallization (311) protected by an overcoat layer (320). A portion of the metallization is exposed in a window (301) opened through the thickness of the overcoat layer. The metal structure comprises a patterned conductive barrier layer (330) positioned on the copper metallization, wherein this barrier layer forms a trough with walls (331) conformal with the overcoat window. The height (331a) of the wall is less (between 3 and 20 %) than the overcoat thickness (320a), forming a step (340). A plug (350) of bondable metal, preferably aluminum, is positioned in the trough and has a thickness equal to the trough wall height (331a).

摘要翻译： 一种用于集成电路的金属结构，其具有由外涂层（320）保护的铜互连金属化（311）。 金属化的一部分在通过外涂层的厚度打开的窗口（301）中暴露。 金属结构包括定位在铜金属化层上的图案化的导电阻挡层（330），其中该阻挡层形成具有与外涂层窗口共形的壁（331）的槽。 壁的高度（331a）比外涂层厚度（320a）小（在3和20％之间），形成步骤（340）。 可接合金属（优选铝）的塞子（350）被定位在槽中并且具有等于槽壁高度（331a）的厚度。

公开(公告)号：US07015127B2

公开(公告)日：2006-03-21

申请号：US10408119

申请日：2003-04-08

申请人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

发明人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

摘要： Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

公开(公告)号：US06995082B2

公开(公告)日：2006-02-07

申请号：US10722299

申请日：2003-11-25

申请人： Date-Gun Lee

发明人： Date-Gun Lee

IPC分类号： H01L21/302

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/4847 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48992 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2924/00

摘要： The present invention relates to a bonding pad of a semiconductor device and a formation method thereof, and the object of the present invention is to prevent bonding defects by enlarging contact area between a bonding pad and a soldering material and to prevent moisture from penetrating into an oxide layer. The present invention provides a bonding pad of a semiconductor device comprising: a barrier metal layer formed on a structure of a semiconductor substrate; a metal wire layer formed on the barrier metal layer; a passivation metal layer formed on the metal wire layer and removed partly to expose a portion of the upper surface of the metal wire layer; an insulating layer which is formed on the passivation metal layer and has a contact hole exposing the metal wire layer via the portion that the passivation metal layer is removed; and an adhesive metal layer formed on the inner surface of the contact hole.

摘要翻译： 本发明涉及一种半导体器件的焊盘及其形成方法，其目的在于通过扩大接合焊盘与焊接材料之间的接触面积来防止焊接缺陷，并防止水分渗入 氧化层。 本发明提供一种半导体器件的焊盘，包括：形成在半导体衬底的结构上的阻挡金属层; 形成在阻挡金属层上的金属线层; 钝化金属层，形成在所述金属线层上，并部分地去除以暴露所述金属线层的上表面的一部分; 绝缘层，其形成在所述钝化金属层上并且具有通过去除所述钝化金属层的部分暴露所述金属线层的接触孔; 以及形成在接触孔的内表面上的粘合金属层。

公开(公告)号：US06960831B2

公开(公告)日：2005-11-01

申请号：US10605369

申请日：2003-09-25

申请人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

发明人： Lloyd G. Burrell ,  Kwong H. Wong ,  Adreanne A. Kelly ,  Samuel R. McKnight

IPC分类号： H01L23/485 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/45 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2924/00011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.

摘要翻译： 一种半导体器件，以及一种制造该器件的方法，在铜布线层上方具有铜布线层和铝接合焊盘。 除了通常存在以保护铜布线水平的阻挡层之外，在铝接合焊盘和阻挡层之间存在复合层，以使铝接合焊盘更坚固，以便承受粘结和探测的力。 复合层是难熔金属和难熔金属氮化物的夹层物。

公开(公告)号：US20050224908A1

公开(公告)日：2005-10-13

申请号：US10513057

申请日：2003-03-17

申请人： Hans-Joachim Barth

发明人： Hans-Joachim Barth

IPC分类号： H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L27/04 ,  H01L29/00

CPC分类号： H01L24/05 ,  H01L23/5223 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00

摘要： An explanation is given of, inter alia, a circuit arrangement in which an intermediate layer (160) made of a dielectric material is arranged between two metal layers (102 and 104). The intermediate layer (160) is designed in such a way that the capacitance per unit area between the connection layers (102, 104) is greater than 0.5 fF/μm2.

摘要翻译： 特别地说明了其中由介电材料制成的中间层（160）布置在两个金属层（102和104）之间的电路装置。 中间层（160）被设计成使得连接层（102,104）之间的每单位面积的电容大于0.5fF / m 2。

公开(公告)号：US20050215048A1

公开(公告)日：2005-09-29

申请号：US10806519

申请日：2004-03-23

申请人： Lei Li ,  Edgardo Hortaleza

发明人： Lei Li ,  Edgardo Hortaleza

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/66 ,  H01L23/485 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02126 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/85201 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/00

摘要： A metal structure for a contact pad of an integrated circuit (IC), which has copper interconnecting metallization (311). A portion (301) of this metallization is exposed to provide a contact pad to the IC. A conductive barrier layer (330) is positioned on the exposed portion of the copper metallization. A plug (350) of bondable metal, preferably aluminum between about 0.4 and 1.4 μm thick, is positioned on the barrier layer. A protective overcoat layer (320) surrounds the plug and has a thickness (320b) so that the exposed surface (322) of the plug lies at or below the exposed surface (320a) of the overcoat layer. Optionally, a portion (321) of the overcoat layer between about 0.1 and 0.3 μm wide may overlap the perimeter of the plug.

摘要翻译： 一种用于集成电路（IC）的接触焊盘的金属结构，其具有铜互连金属化（311）。 暴露该金属化部分（301）以向IC提供接触焊盘。 导电阻挡层（330）位于铜金属化的暴露部分上。 可粘合金属的塞子（350）优选地在约0.4至1.4μm厚的铝之间，位于阻挡层上。 保护性外涂层（320）围绕塞子并具有厚度（320b），使得塞子的暴露表面（322）位于外涂层的暴露表面（320a）处或下方。 任选地，外涂层的约0.1至0.3μm宽的部分（321）可以与插塞的周边重叠。

公开(公告)号：US06897570B2

公开(公告)日：2005-05-24

申请号：US10340307

申请日：2003-01-09

申请人： Takashi Nakajima ,  Naotaka Tanaka ,  Yasuyuki Nakajima ,  Ryo Haruta ,  Tomoo Matsuzawa ,  Masashi Sahara ,  Ken Okutani

发明人： Takashi Nakajima ,  Naotaka Tanaka ,  Yasuyuki Nakajima ,  Ryo Haruta ,  Tomoo Matsuzawa ,  Masashi Sahara ,  Ken Okutani

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/522 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L23/485 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/20106 ,  H01L2924/20303 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/00011

摘要： A highly reliable semiconductor device provided herein can prevent a junction between a pad and a wire from coming off, and pads from peeling off an underlying insulating layer on the interface thereof. The semiconductor device has plugs formed in a region in which an electrode pad is formed over a substrate. The plugs protrude into the electrode pad.

摘要翻译： 这里提供的高度可靠的半导体器件可以防止焊盘和电线之间的接合脱落，并且焊盘从其界面上的下面的绝缘层剥离。 半导体器件具有形成在电极焊盘形成在衬底上的区域中的插塞。 插头突出到电极垫中。

公开(公告)号：US06864578B2

公开(公告)日：2005-03-08

申请号：US10249381

申请日：2003-04-03

申请人： David Angell ,  Frederic Beaulieu ,  Takashi Hisada ,  Adreanne Kelly ,  Samuel Roy McKnight ,  Hiromitsu Miyai ,  Kevin Shawn Petrarca ,  Wolfgang Sauter ,  Richard Paul Volant ,  Caitlin W. Weinstein

发明人： David Angell ,  Frederic Beaulieu ,  Takashi Hisada ,  Adreanne Kelly ,  Samuel Roy McKnight ,  Hiromitsu Miyai ,  Kevin Shawn Petrarca ,  Wolfgang Sauter ,  Richard Paul Volant ,  Caitlin W. Weinstein

IPC分类号： H01L23/485 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/05073 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/04941 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

公开(公告)号：US06844631B2

公开(公告)日：2005-01-18

申请号：US10097036

申请日：2002-03-13

申请人： Lois E. Yong ,  Peter R. Harper ,  Tu Anh Tran ,  Jeffrey W. Metz ,  George R. Leal ,  Dieu Van Dinh

发明人： Lois E. Yong ,  Peter R. Harper ,  Tu Anh Tran ,  Jeffrey W. Metz ,  George R. Leal ,  Dieu Van Dinh

IPC分类号： H01L21/66 ,  H01L21/60 ,  H01L23/485 ,  H01L23/58 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L22/32 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/48145 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06596 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In an application requiring very fine pitch between bond pads, the probe regions (14) and active regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.

摘要翻译： 接合焊盘（10）具有基本上不重叠的探针区域（14）和引线接合区域（12）。 在一个实施例中，接合焊盘（10）连接到最终金属层焊盘（16）并在互连区域（24）上延伸。 接合焊盘（10）由铝形成，并且最终的金属层焊盘（16）由铜形成。 将探针区域（14）与引线接合区域（12）分开可防止最终金属层焊盘（16）被探针测试损坏，从而允许更可靠的引线接合。 在需要接合焊盘之间非常细间距的应用中，形成在一条线上的多个接合焊盘的探针区域（14）和有源区域（12）可以交错以增加探针区域（14）之间的距离。 此外，在互连区域（24）上形成接合焊盘（10）减小了集成电路的尺寸。