公开(公告)号：US20140261690A1

公开(公告)日：2014-09-18

申请号：US13844442

申请日：2013-03-15

Applicant: ERNEST ORLANDO LAWRENCE BERKELEY NATIONAL LABORATORY

Inventor： Wladyslaw Walukiewicz ,  Kin Man Yu

IPC: H01L31/0304 ,  H01L31/18

CPC classification number: H01L31/03048 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

Abstract: A single junction solar cell may be manufactured with a material having multiple bands. That is, a single semiconductor with several absorption edges that absorb photons from different parts of the solar spectrum may be constructed. The different absorption edges may be created by splitting a conduction band of the solar cell material into multiple intermediate sub-bands. The solar cell may include a photovoltaic material deposited on a substrate, in which the photovoltaic material is a III-V semiconductor alloy, such as AlGaNAs, AlGaAsNSb, or AlInGaNAsBi.

Abstract translation: 单结太阳能电池可以用具有多个带的材料制造。 也就是说，可以构建具有从太阳光谱的不同部分吸收光子的几个吸收边的单个半导体。 可以通过将太阳能电池材料的导带分成多个中间子带来产生不同的吸收边缘。 太阳能电池可以包括沉积在基板上的光伏材料，其中光伏材料是III-V半导体合金，例如AlGaNA，AlGaAsNSb或AlInGaNABB。

公开(公告)号：US20140197454A1

公开(公告)日：2014-07-17

申请号：US14154460

申请日：2014-01-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon PARK ,  Chang Suk HAN ,  Hwa Mok KIM ,  Hyo Shik CHOI ,  Daewoong SUH

IPC: H01L31/109 ,  H01L31/0304

CPC classification number: H01L31/109 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/0236 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/07 ,  H01L31/108 ,  H01L31/1848 ,  Y02E10/544

Abstract: TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.

Abstract translation: TA光检测装置，包括基板，在基板上形成的带通滤波器层，形成在带通滤波器层上的光吸收层，形成在光吸收层的一部分上的肖特基层，第一电极层 形成在肖特基层的一部分上，以及形成在光吸收层上并与肖特基层间隔开的第二电极层。

公开(公告)号：US20140183548A1

公开(公告)日：2014-07-03

申请号：US14140054

申请日：2013-12-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

IPC: H01L31/0304

CPC classification number: H01L31/03048 ,  H01L31/108 ,  H01L31/1848 ,  Y02E10/544

Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Abstract translation: 光检测装置包括衬底，设置在衬底上的缓冲层，设置在缓冲层的一部分上的第一带隙变化层，设置在第一带隙变化层上的光吸收层，设置在第一带隙变化层上的肖特基层 部分光吸收层，以及设置在肖特基层的一部分上的第一电极层。

公开(公告)号：US08697481B2

公开(公告)日：2014-04-15

申请号：US13708763

申请日：2012-12-07

Applicant: Solar Junction Corporation

Inventor： Rebecca Elizabeth Jones-Albertus ,  Pranob Misra ,  Michael J. Sheldon ,  Homan B. Yuen ,  Ting Liu ,  Daniel Derkacs ,  Vijit Sabnis ,  Micahel West Wiemer ,  Ferran Suarez

IPC: H01L31/0687 ,  H01L31/0725 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/06 ,  H01L31/0693 ,  H01L31/078

CPC classification number: H01L31/0687 ,  H01L31/028 ,  H01L31/03048 ,  H01L31/06 ,  H01L31/0693 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1856 ,  H01L31/1876 ,  Y02E10/544 ,  Y02P70/521

Abstract: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

Abstract translation: 公开了具有至少四个子电池的多结太阳能电池，其中至少一个子电池包括由周期表上的组III中的一种或多种元素的合金形成的基底层，氮，砷和选择的至少一种元素 从Sb和Bi组成的组，并且每个子电池基本上是晶格匹配的。 还公开了包括至少一个多结太阳能电池的太阳能电池和光伏系统的制造方法。

公开(公告)号：US20140070272A1

公开(公告)日：2014-03-13

申请号：US14115453

申请日：2012-04-26

Applicant: Andrea Knigge ,  Markus Weyers ,  Hans-Joachim Wurfl

Inventor： Andrea Knigge ,  Markus Weyers ,  Hans-Joachim Wurfl

IPC: H01L31/0352 ,  H01L31/0224

CPC classification number: H01L31/035272 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/03048 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/102 ,  H01L31/1085 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.

Abstract translation: 本发明涉及具有高灵敏度和低暗电流的紫外光检测器。 本发明的目的是指定具有高灵敏度和低暗电流的UV光电检测器。 根据本发明，第一电极结构的指状物和第二电极结构的指状物具有由第二半导体材料制成的覆盖层，其中覆盖层布置在吸收层上并直接接触区域中的吸收层 的手指，并且第一半导体材料和第二半导体材料被设计成使得在手指区域中的吸收层和覆盖层之间的边界层处形成二维电子气（2DEG） 。

公开(公告)号：US08664086B2

公开(公告)日：2014-03-04

申请号：US12662646

申请日：2010-04-27

Applicant: Mitsuhiko Ogihara

Inventor： Mitsuhiko Ogihara

IPC: H01L21/30

CPC classification number: H01L21/02458 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/105 ,  H01L31/1848 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0079 ,  Y02E10/544 ,  Y02P70/521

Abstract: A method for manufacturing a semiconductor thin film device includes: forming a buffer layer on an Si (111) substrate and a single crystal semiconductor layer on the buffer layer; forming an island including the semiconductor layer, buffer layer, and a portion of the substrate; forming a coating layer on the island; etching the substrate along its Si (111) plane to release the island from the substrate, the coating layer serving as a mask; and bonding the released island to another substrate, a released surface of the released island contacting the another substrate. A semiconductor device includes a single crystal semiconductor layer other than Si, which has a semiconductor device formed on a front surface of an Si (111) layer lying in a (111) plane. The layer is bonded to another substrate with a back surface contacting the another substrate or a bonding layer formed on the another substrate.

Abstract translation: 半导体薄膜器件的制造方法包括：在Si（111）衬底上形成缓冲层，在缓冲层上形成单晶半导体层; 形成包括半导体层，缓冲层和基板的一部分的岛; 在岛上形成涂层; 沿其Si（111）平面蚀刻衬底以从衬底释放岛，该涂层用作掩模; 并且将释放的岛结合到另一基底，释放的岛的释放表面与另一基底接触。 半导体器件包括除Si之外的单晶半导体层，其具有形成在位于（111）面中的Si（111）层的前表面上的半导体器件。 该层被粘合到另一个基板上，其背面接触另一个基板或形成在另一个基板上的接合层。

公开(公告)号：US20130181308A1

公开(公告)日：2013-07-18

申请号：US13720284

申请日：2012-12-19

Applicant: Chantal Arena ,  Robin Scott ,  Claudio Canizares

Inventor： Chantal Arena ,  Robin Scott ,  Claudio Canizares

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/153 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/1848 ,  H01L33/0062 ,  H01L33/08 ,  H01S5/32341 ,  H01S5/32358 ,  Y02E10/544

Abstract: Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a vapor phase epitaxy (HVPE) chamber.

Abstract translation: 稀氮化物III-V半导体材料可以通过用先前形成的氮化物材料中的一些N原子取代As原子将至少一部分先前形成的氮化物转化成包括砷的稀氮化物III-V半导体材料来形成。 这种方法可以用于制造光电器件，例如光伏电池和光电放电器。 该方法可以在沉积室内进行，例如金属有机化学气相沉积（MOCVD）或气相外延（HVPE）室。

公开(公告)号：US20130126892A1

公开(公告)日：2013-05-23

申请号：US13475420

申请日：2012-05-18

Applicant: Kin Man Yu ,  Wladyslaw Walukiewicz ,  Alejandro X. Levander ,  Sergei V. Novikov ,  C. Thomas Foxon

Inventor： Kin Man Yu ,  Wladyslaw Walukiewicz ,  Alejandro X. Levander ,  Sergei V. Novikov ,  C. Thomas Foxon

IPC: H01L29/20 ,  H01L21/04

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/04 ,  H01L21/28575 ,  H01L29/452 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0376 ,  H01L31/0693 ,  H01L33/325 ,  H01L33/40 ,  Y02E10/544

Abstract: A new composition of matter is described, amorphous GaN1-xAsx:Mg, wherein 0

Abstract translation: 描述了一种新的物质组合物，其中0

公开(公告)号：US20130112275A1

公开(公告)日：2013-05-09

申请号：US13290404

申请日：2011-11-07

Applicant: Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

Inventor： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC: H01L31/0264 ,  H01L31/18

CPC classification number: H01L31/074 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544

Abstract: A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

公开(公告)号：US20120103403A1

公开(公告)日：2012-05-03

申请号：US12914710

申请日：2010-10-28

Applicant: Pranob Misra ,  Rebecca Elizabeth Jones ,  Ting Liu ,  Ilya Fushman ,  Homan Bernard Yuen

Inventor： Pranob Misra ,  Rebecca Elizabeth Jones ,  Ting Liu ,  Ilya Fushman ,  Homan Bernard Yuen

IPC: H01L31/0288 ,  H01L31/18

CPC classification number: H01L31/0735 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544

Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.

Abstract translation: 具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂，从而控制太阳能电池的载流能力。 具体地说，公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。 在一个实施例中，晶格匹配多结太阳能电池具有上部子电池，中间子电池和下部稀的氮化物子电池，下部稀土氮化物子电池在基极和/或发射极中具有掺杂， 至少部分地指数地掺杂，以便改善其太阳能电池性能特征。 在构造中，稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配，中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。 上部子单元通常具有最高的带隙并且与相邻的子单元格子匹配。 在另外的实施例中，根据本发明的多结太阳能电池可以包括四个，五个或更多个子电池，其中一个或多个子电池可以各自包含指数掺杂的稀氮化物合金。