公开(公告)号：US08039854B2

公开(公告)日：2011-10-18

申请号：US12399273

申请日：2009-03-06

申请人： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

发明人： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

IPC分类号： H01L29/205 ,  H01L33/00

CPC分类号： H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

摘要翻译： 示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米线的结晶度。 可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。 此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。 此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

公开(公告)号：US20110228035A1

公开(公告)日：2011-09-22

申请号：US13049391

申请日：2011-03-16

申请人： Toshihiro Ishii ,  Satoru Sugawara ,  Yoshihiro Ohba ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Kazuhiko Adachi

发明人： Toshihiro Ishii ,  Satoru Sugawara ,  Yoshihiro Ohba ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Kazuhiko Adachi

IPC分类号： B41J2/47 ,  H01S5/18 ,  G02B26/10

CPC分类号： H01S5/02208 ,  B41J2/45 ,  B41J2/47 ,  B82Y20/00 ,  G06K15/129 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3202 ,  H01S5/34306 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/14

摘要： A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

摘要翻译： 所公开的表面发射激光器模块包括形成在基板上以发射垂直于其表面的光的表面发射激光器，包括其中布置有具有表面发射激光器的基板的凹部的封装和布置成 覆盖封装的凹部和具有表面发射激光器的基板，使得透明基板和封装件连接在表面发射激光器的发光侧。 在表面发射激光器模块中，在由表面发射激光器的台面的上部的电极包围的区域内形成高反射率区域和低反射率区域，并且透明基板倾斜到 所述基板具有从由所述高反射率区域和所述低反射率区域确定的从所述表面发射激光器发射的光的偏振方向的所述表面发射激光器。

公开(公告)号：US20110217077A1

公开(公告)日：2011-09-08

申请号：US13127845

申请日：2009-11-24

申请人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

发明人： Kazuhiro Harasaka ,  Shunichi Sato ,  Naoto Jikutani

IPC分类号： G03G15/01 ,  H01S5/20 ,  H01S5/10 ,  H01S5/18 ,  H01S5/42 ,  G02B26/10 ,  G03G15/28

CPC分类号： G03G15/04 ,  B82Y20/00 ,  G02B26/10 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423

摘要： A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

摘要翻译： 构造成在垂直于衬底的方向发射激光的表面发射激光器件包括围绕发射表面上的发射区域的p侧电极以发射激光; 以及透明电介质膜，形成在发光区域的中心部分的外侧的外侧区域内，并且在发光区域内，将反射率降低到小于中心部分的反射率。 发射区域内的外部区域在两个相互垂直的方向上具有形状各向异性。

公开(公告)号：US20110128343A1

公开(公告)日：2011-06-02

申请号：US12950365

申请日：2010-11-19

申请人： Shunichi SATO ,  Kazuhiro Harasaka ,  Naoto Jikutani

发明人： Shunichi SATO ,  Kazuhiro Harasaka ,  Naoto Jikutani

IPC分类号： B41J2/435 ,  H01S5/00

CPC分类号： H01S5/18394 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/3434 ,  H01S5/423 ,  H01S2301/18

摘要： A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.

摘要翻译： 所公开的表面发射激光元件包括具有有源层的谐振器结构，第一半导体多层反射镜和第二半导体多层反射镜，其被配置为夹着具有有源层的谐振器结构，设置在发光区域的发射区域周围的电极 表面，以及设置在发光区域的周边部分和发光区域的中心部分外的电介质膜，以使周边部分的反射率低于中心部分的反射率。 在表面发射激光元件中，设置在发光面的发光区域周围的电极与接触层接触的部分的外形包括角部。

公开(公告)号：US20110123227A1

公开(公告)日：2011-05-26

申请号：US12952284

申请日：2010-11-23

申请人： Katsunari HANAOKA

发明人： Katsunari HANAOKA

IPC分类号： G03G15/04 ,  H01S5/18 ,  H01S5/42

CPC分类号： H01S5/18369 ,  B41J2/45 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176 ,  H01S2301/18

摘要： A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

摘要翻译： 表面发射激光元件包括基板; 层叠在所述基板上的多个半导体层，所述多个半导体层包括具有活性层的谐振器结构体和将所述谐振器结构体夹在其间的半导体多层膜反射镜; 电极，其设置成围绕发射光的表面发射激光元件的表面上的发光区域; 以及设置在发光区域中的电介质膜，使得发光区域的周边部分的反射率与发光区域的中心部分的反射率不同。 靠近电介质膜边缘的边缘部分相对于表面倾斜。

公开(公告)号：US20110116147A1

公开(公告)日：2011-05-19

申请号：US12917080

申请日：2010-11-01

申请人： Hiroshi MOTOMURA ,  Shunichi Sato

发明人： Hiroshi MOTOMURA ,  Shunichi Sato

IPC分类号： G02B26/08 ,  G02B26/10 ,  H01S5/00

CPC分类号： H01S5/18313 ,  B41J2/473 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18352 ,  H01S5/18355 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

摘要： A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.

摘要翻译： 公开的表面发射激光器件包括：振荡器结构，其包括有源层，夹着振荡器结构的半导体多层反射镜，设置在发光面上的电极，以使电极围绕发射区域的方式发射光;电介质 在发光区域的中心部分外的至少一个区域中形成的膜，使得发光区域的中心部分外的区域的折射率小于发光区域的中心部分的折射率。 当从光的发射方向观察时，电极的一部分与电介质膜的一部分重叠。

公开(公告)号：US07940825B2

公开(公告)日：2011-05-10

申请号：US12429614

申请日：2009-04-24

申请人： Naoto Jikutani

发明人： Naoto Jikutani

IPC分类号： H01S5/00

CPC分类号： H01S5/18355 ,  H01S5/0655 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18333 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/205 ,  H01S5/2063 ,  H01S5/423 ,  H01S2301/166

摘要： A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors opposing with each other across a structure formed of the active layer and the cavity spacer layers, the current confinement structure being formed by a selective oxidation process of a semiconductor layer, the pair of distributed Bragg reflectors being formed of semiconductor materials, wherein there is provided a region containing an oxide of Al and having a relatively low refractive index as compared with a surrounding region in any of the semiconductor distributed Bragg reflector or the cavity spacer layer in correspondence to a part spatially overlapping with the current injection region in a laser cavity direction.

摘要翻译： 表面发射激光二极管包括有源层，形成在有源层的两侧的一对空腔隔离层，限定到有源层中的电流注入区的电流限制结构以及与每个相对的一对分布式布拉格反射器 另一个跨越由有源层和空腔间隔层形成的结构，电流限制结构通过半导体层的选择性氧化工艺形成，该对分布式布拉格反射器由半导体材料形成，其中提供了一个包含 与半导体分布布拉格反射器或空腔间隔层中的任一个的周围区域相比，Al的氧化物的折射率相对于在激光器腔方向上与电流注入区域空间重叠的部分相比具有相对低的折射率。

公开(公告)号：US20110069729A1

公开(公告)日：2011-03-24

申请号：US12564264

申请日：2009-09-22

申请人： André Strittmatter ,  Christopher L. Chua ,  Peter Kiesel ,  Noble M. Johnson

发明人： André Strittmatter ,  Christopher L. Chua ,  Peter Kiesel ,  Noble M. Johnson

IPC分类号： H01S5/34 ,  H01S5/026

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/041 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/3407 ,  H01S2301/14

摘要： A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

摘要翻译： 半导体发光器件包括泵浦光源，增益结构和输出耦合镜。 增益结构由在泵浦波长处具有共振激发吸收的InGaN层组成。 来自泵浦光源的光使得增益结构发光，其由出射耦合镜反射回增益结构。 分布式布拉格反射器在增益结构内部引起内部反射。 输出耦合镜允许具有足够能量的光通过其中以在设备外部使用。 倍增结构可以设置在增益结构和输出耦合镜之间。 可以实现深紫外光谱中的输出波长。

公开(公告)号：US20100316083A1

公开(公告)日：2010-12-16

申请号：US12795641

申请日：2010-06-07

申请人： Connie J. Chang-Hasnain ,  Michael Chung-Yi Huang ,  Ye Zhou ,  Carlos Fernando Rondina Mateus

发明人： Connie J. Chang-Hasnain ,  Michael Chung-Yi Huang ,  Ye Zhou ,  Carlos Fernando Rondina Mateus

IPC分类号： H01S5/125 ,  H01S5/183 ,  H01L33/46 ,  H01L31/0232 ,  H01L29/66

CPC分类号： G02B5/1809 ,  G02B5/0816 ,  G02B5/1861 ,  G02B26/001 ,  G02B26/0808 ,  G02B26/0833 ,  G02B27/42 ,  G02B27/4255 ,  G02B27/4261 ,  H01S5/0655 ,  H01S5/18319 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18366 ,  H01S5/187

摘要： A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

摘要翻译： 使用具有非常宽的反射光谱和非常高的反射率的亚波长光栅（SWG）结构来描述垂直腔表面发射激光器（VCSEL）。 光栅包括具有高折射率材料和低折射率材料之间的折射率差的高折射率材料和低折射率材料的片段。 作为示例，SWG反射结构设置在低折射率空腔区域上并且在另一反射层（SWG或DBR）上方。 在一个实施例中，SWG结构可以例如根据MEMS技术相对于相对的反射器是可移动的，以提供波长选择性调谐。 SWG-VCSEL设计可扩展，以形成不同波长和波长范围的一系列SWG-VCSEL的光学腔。

公开(公告)号：US20100315478A1

公开(公告)日：2010-12-16

申请号：US12656362

申请日：2010-01-27

申请人： An-sik Choi ,  O-dae Kwon ,  Jae-hwan Yoo ,  Young-chun Kim ,  Kwang-hyun Chae ,  Cheng-hoon Kim ,  Mi-hyang Shin

发明人： An-sik Choi ,  O-dae Kwon ,  Jae-hwan Yoo ,  Young-chun Kim ,  Kwang-hyun Chae ,  Cheng-hoon Kim ,  Mi-hyang Shin

IPC分类号： B41J2/47 ,  H01S5/125

CPC分类号： H01S5/1835 ,  B41J2/45 ,  H01S5/1075 ,  H01S5/18319 ,  H01S5/2027 ,  H01S5/423 ,  H01S2301/18

摘要： Provided are a semiconductor laser diode, and a printhead and an image forming apparatus including the semiconductor laser diode. The semiconductor laser diode includes a concave-convex pattern, and emits light having a Gaussian light intensity distribution. High quality images are provided by applying the semiconductor laser diode to a printhead and an image forming apparatus.

摘要翻译： 提供半导体激光二极管，以及包括半导体激光二极管的打印头和图像形成装置。 半导体激光二极管包括凹凸图案，并且发射具有高斯光强度分布的光。 通过将半导体激光二极管应用于打印头和图像形成装置来提供高质量的图像。