摘要:
The invention relates to a semiconductor device comprising through contacts through a plastic housing composition and a method for the production thereof. For this purpose, the wiring substrate has a solder deposit on which through contact elements are arranged vertically with respect to the wiring substrate and extend as far as the top side of the semiconductor device.
摘要:
One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.
摘要:
One embodiment of the present invention relates to a variable capacitor that operates without moving mechanical parts. In this capacitor electrically conductive electrodes are separated by an enclosed chamber filled with an electrically conductive material. The electrically conductive material can freely vary its position within the chamber. The capacitance of the device will vary as position of the conductive material changes due to external mechanical motion (ex: rotation, vibration, etc.) of the device. Other embodiments of this device are also disclosed.
摘要:
A wafer-level packaged integrated circuit includes a semiconductor substrate including a first silicon layer. A micro-electromechanical system (MEMS) device is integrated into the first silicon layer. A thin-film deposited sealing member is deposited over the first silicon layer and is configured to seal a cavity in the first silicon layer. At least one additional layer is formed over the sealing member. At least one under bump metallization (UBM) is formed over the at least one additional layer.
摘要:
A panel for the production of electronic components is disclosed. The components have a substantially planar semiconductor chip with chip through-contacts which are provided with electrically conductive material. A rewiring region is subdivided into an insulating layer and also a first rewiring arranged therein, the rewiring projecting laterally beyond the side edge of the planar semiconductor chip. The rewiring has external contacts for electrical connections toward the outside. The panel provides a filling layer made of plastic, which encapsulates the semiconductor chip in a side region between the chip front side and the chip rear side and which is connected to the rewiring region.
摘要:
A method of manufacturing a sensor node module includes forming a protruding structure on a carrier. A sensor die is applied onto the protruding structure with an active sensing surface of the sensor die facing the carrier. The sensor die is encapsulated with mold material, wherein the protruding structure prevents the mold material from covering the active sensing surface. The carrier and the protruding structure are removed from the sensor die.
摘要:
A semiconductor device includes surface-mountable external contacts on an underside of the semiconductor device, wherein the external contacts are arranged on external contact pads and surrounded by a solder-resist layer. The external contacts of the outer edge regions include external contact pads that merge into inspection tags, wherein the inspection tags can be wetted by solder and are not covered by the solder-resist layer.
摘要:
A method of manufacturing a sensor node module includes forming a protruding structure on a carrier. A sensor die is applied onto the protruding structure with an active sensing surface of the sensor die facing the carrier. The sensor die is encapsulated with mold material, wherein the protruding structure prevents the mold material from covering the active sensing surface. The carrier and the protruding structure are removed from the sensor die.
摘要:
A semiconductor substrate, a semiconductor chip and a semiconductor component with areas composed of a stressed monocrystalline material, and a method for production of a semiconductor component is disclosed. In one embodiment, the semiconductor chip includes relatively thick stressed layers achieving reduced switching times. For this purpose, the semiconductor substrate has one or more areas with extrinsic, permanent curvature, with the crystal structure K being compressed and/or widened and/or distorted in these areas.
摘要:
An electrical device and method is disclosed. One embodiment provides a substrate, a sensor chip disposed completely above a plane section of a surface of the substrate. A structurally homogeneous material layer is disposed above the substrate and the sensor chip. A cavity is formed between the substrate and the material layer. The sensor chip is disposed inside the cavity.