TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, STORAGE CONTAINER STORING TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE

    公开(公告)号:US20190025703A1

    公开(公告)日:2019-01-24

    申请号:US16143497

    申请日:2018-09-27

    Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects such as particles is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured, and a storage container storing the treatment liquid for manufacturing a semiconductor. In addition, another object of the present invention is to provide a pattern forming method using the treatment liquid for manufacturing a semiconductor and a method of manufacturing an electronic device.A storage container according to an embodiment of the present invention includes a storage portion that stores a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of metal species including Al, Ca, Cr, Co, Cu, Fe, Pb, Li, Mg, Mn, Ni, K, Ag, Na, and Zn, and a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

    ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
    86.
    发明申请
    ETCHING SOLUTION AND ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT 审中-公开
    蚀刻溶液和蚀刻溶液套件,使用其的蚀刻方法以及半导体衬底产品的生产方法

    公开(公告)号:US20160053386A1

    公开(公告)日:2016-02-25

    申请号:US14928824

    申请日:2015-10-30

    Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compoundSpecific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid

    Abstract translation: 提供了包括含有锗(Ge)的第一层和含有除锗(Ge)之外的特定金属元素的第二层的半导体衬底的蚀刻溶液,所述蚀刻溶液选择性地除去第二层并包括以下特定酸化合物 特定酸化合物:硫酸(H 2 SO 4),硝酸(HNO 3),磷酸(H 3 PO 4),膦酸(H 3 PO 3)或有机酸

    ETCHING METHOD, ETCHING SOLUTION USED IN SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT
    87.
    发明申请
    ETCHING METHOD, ETCHING SOLUTION USED IN SAME, AND PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE PRODUCT 审中-公开
    蚀刻方法,使用其中的蚀刻方法和半导体基板产品的生产方法

    公开(公告)号:US20160053385A1

    公开(公告)日:2016-02-25

    申请号:US14927697

    申请日:2015-10-30

    Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

    Abstract translation: 提供了一种半导体衬底的蚀刻方法,其包括含有锗(Ge)的第一层和包含选自镍铂(NiPt),钛(Ti),镍(Ni))和至少一种特定金属元素的第二层 钴(Co),该方法包括:使包含非卤素酸性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

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