公开(公告)号：US20190025703A1

公开(公告)日：2019-01-24

申请号：US16143497

申请日：2018-09-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya SHIMIZU ,  Tetsuya KAMIMURA

IPC: G03F7/32 ,  H01L21/308 ,  H01L21/027

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects such as particles is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured, and a storage container storing the treatment liquid for manufacturing a semiconductor. In addition, another object of the present invention is to provide a pattern forming method using the treatment liquid for manufacturing a semiconductor and a method of manufacturing an electronic device.A storage container according to an embodiment of the present invention includes a storage portion that stores a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of metal species including Al, Ca, Cr, Co, Cu, Fe, Pb, Li, Mg, Mn, Ni, K, Ag, Na, and Zn, and a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

公开(公告)号：US20180164681A1

公开(公告)日：2018-06-14

申请号：US15893794

申请日：2018-02-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Daisuke HAMADA ,  Yushi KANEKO ,  Makoto KUBOTA ,  Keiji YAMAMOTO

IPC: G03F7/031

CPC classification number: G03F7/031 ,  G02B5/20 ,  G02B5/223 ,  G02F1/133514 ,  G03F7/0007 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L27/14 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/322 ,  H01L51/5284

Abstract: Provided are a coloring photosensitive composition that is curable in a low-temperature environment, as well as a cured film, a color filter, a light-shielding film, a solid-state imaging device, an image display device, and a method for producing a cured film, in which the coloring photosensitive composition is used. The coloring photosensitive composition contains a coloring agent, a polymerizable compound, and a photopolymerization initiator, in which the photopolymerization initiator in the form of a solution in which 0.001% by mass of the photopolymerization initiator is dissolved in acetonitrile has an absorbance of 0.45 or more at a wavelength of 340 nm.

公开(公告)号：US20170174869A1

公开(公告)日：2017-06-22

申请号：US15447335

申请日：2017-03-02

Applicant: FUJIFILM Corporation

Inventor： Kyohei ARAYAMA ,  Takuya TSURUTA ,  Kazutaka TAKAHASHI ,  Tetsuya KAMIMURA ,  Masahiro MORI

IPC: C08K5/55 ,  C08K5/42 ,  C08K5/3432 ,  C08K5/20 ,  C08K5/435 ,  C08K5/3447 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/004 ,  G03F7/033 ,  G03F7/031 ,  C09B57/00 ,  G02B5/20 ,  G02B5/22 ,  H01L27/146

CPC classification number: C08K5/55 ,  C08F2/44 ,  C08F2/50 ,  C08K5/20 ,  C08K5/3417 ,  C08K5/3432 ,  C08K5/3447 ,  C08K5/42 ,  C08K5/435 ,  C08K5/46 ,  C08K2201/003 ,  C08L101/00 ,  C09B23/0058 ,  C09B23/0075 ,  C09B57/00 ,  C09B69/001 ,  G02B5/201 ,  G02B5/208 ,  G02B5/223 ,  G03F7/0007 ,  G03F7/0045 ,  G03F7/027 ,  G03F7/031 ,  G03F7/033 ,  G03F7/105 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/40 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14621 ,  H01L27/14625

Abstract: Provided are a composition of which dispersibility of particles including a pyrrolopyrrole coloring agent is satisfactory, a method of manufacturing a composition, a curable composition, a cured film using a curable composition, a near-infrared cut filter, a solid-state imaging device, an infrared sensor, and a camera module. The composition includes particles including a coloring agent represented by Formula (1), in which an average secondary particle diameter of the particles is 500 nm or less. R1a and R1b each independently represent an alkyl group, an aryl group, or a heteroaryl group, R2 and R3 each independently represent a hydrogen atom or a substituent, R2 and R3 may be bonded to each other to form a ring, R4's each independently represent a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, —BR4AR4B, or a metal atom, R4's may form a covalent bond or a coordinate bond with at least one selected form R1a, R1b, or R3, and R4A and R4B each independently represent a hydrogen atom or a substituent.

公开(公告)号：US20160365254A1

公开(公告)日：2016-12-15

申请号：US15245593

申请日：2016-08-24

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA

IPC: H01L21/3213 ,  C23F1/30 ,  H01L29/66

CPC classification number: H01L21/32134 ,  C23F1/00 ,  C23F1/10 ,  C23F1/14 ,  C23F1/26 ,  C23F1/30 ,  H01L21/02019 ,  H01L21/02381 ,  H01L29/665 ,  H01L29/78

Abstract: Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.

Abstract translation: 提供了含有磺酸化合物，卤素离子，硝酸或硝酸离子，有机阳离子和水的半导体工艺的蚀刻剂。

公开(公告)号：US20160254164A1

公开(公告)日：2016-09-01

申请号：US15152620

申请日：2016-05-12

Applicant: FUJIFILM Corporation

Inventor： Yasuo SUGISHIMA ,  Tetsuya KAMIMURA ,  Atsushi MIZUTANI

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/425 ,  H01L21/823807 ,  H01L21/823857

Abstract: Provided is a stripping method for stripping a modified resist from a semiconductor substrate by applying an etching solution to the semiconductor substrate, in which the etching solution contains an alcohol compound and a quaternary ammonium hydroxide compound and the quaternary ammonium hydroxide compound is at least one of tetraethylammonium hydroxide and tetrabutylammonium hydroxide.

Abstract translation: 本发明提供一种剥离方法，用于通过向半导体衬底施加蚀刻溶液来剥离来自半导体衬底的改性抗蚀剂，其中蚀刻溶液含有醇化合物和氢氧化季铵化合物，并且季铵氢氧化物是至少一种 四乙基氢氧化铵和四丁基氢氧化铵。

公开(公告)号：US20160053386A1

公开(公告)日：2016-02-25

申请号：US14928824

申请日：2015-10-30

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Akiko KOYAMA

IPC: C23F1/30 ,  H01L21/465

Abstract: There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including following specific acid compoundSpecific acid compound: sulfuric acid (H2SO4), nitric acid (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3), or organic acid

Abstract translation: 提供了包括含有锗（Ge）的第一层和含有除锗（Ge）之外的特定金属元素的第二层的半导体衬底的蚀刻溶液，所述蚀刻溶液选择性地除去第二层并包括以下特定酸化合物 特定酸化合物：硫酸（H 2 SO 4），硝酸（HNO 3），磷酸（H 3 PO 4），膦酸（H 3 PO 3）或有机酸

公开(公告)号：US20160053385A1

公开(公告)日：2016-02-25

申请号：US14927697

申请日：2015-10-30

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Akiko KOYAMA ,  Atsushi MIZUTANI

IPC: C23F1/30 ,  H01L21/3213 ,  H01L29/417

Abstract: There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.

Abstract translation: 提供了一种半导体衬底的蚀刻方法，其包括含有锗（Ge）的第一层和包含选自镍铂（NiPt），钛（Ti），镍（Ni））和至少一种特定金属元素的第二层 钴（Co），该方法包括：使包含非卤素酸性化合物的蚀刻溶液与第二层接触并选择性地除去第二层。

公开(公告)号：US20240317485A1

公开(公告)日：2024-09-26

申请号：US18673409

申请日：2024-05-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Satomi TAKAHASHI ,  Tadashi OOMATSU ,  Tetsuya SHIMIZU

IPC: B65D85/00 ,  B65D25/14 ,  B65D81/26 ,  G03F7/00 ,  G03F7/32

CPC classification number: B65D85/70 ,  B65D25/14 ,  B65D81/26 ,  G03F7/32 ,  G03F7/325 ,  G03F7/0012

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

公开(公告)号：US20240216843A1

公开(公告)日：2024-07-04

申请号：US18606529

申请日：2024-03-15

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Masahiro YOSHIDOME ,  Yukihisa KAWADA

IPC: B01D37/04 ,  B01D19/04 ,  B01D27/00 ,  B01D39/16 ,  B01D53/46 ,  B01J31/00 ,  B01J31/06 ,  B01J47/014

CPC classification number: B01D37/04 ,  B01D19/0404 ,  B01D27/00 ,  B01D39/1676 ,  B01D53/46 ,  B01J31/00 ,  B01J31/063 ,  B01J47/014 ,  B01D2257/60

Abstract: An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.

公开(公告)号：US20240152055A1

公开(公告)日：2024-05-09

申请号：US18411337

申请日：2024-01-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA

IPC: G03F7/32 ,  B24B37/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/28 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

CPC classification number: G03F7/327 ,  B24B37/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/0758 ,  G03F7/16 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/325 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0274 ,  H01L21/28 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877

Abstract: The present invention provides a manufacturing method of a semiconductor chip, in which the manufacturing yield is excellent, and a kit. According to the present invention, a manufacturing method of a semiconductor chip includes Process 1 of forming an insulating layer on a base material, Process 2 of forming a patterned resist film on the insulating layer, Process 3 of forming the insulating layer having an opening portion by etching the insulating layer with the patterned resist film as a mask, Process 4 of removing the patterned resist film, Process 5 of filling the opening portion of the insulating layer with metal, and Process 6 of performing chemical-mechanical polishing on the insulating layer filled with metal. In at least one process of Process 1 to Process 6, a chemical liquid which includes an organic solvent and metal impurities including at least one metal atom selected from the group consisting of a Fe atom, a Cr atom, a Ni atom, and a Pb atom, and in which the total content of the metal atom is 0.001 to 100 mass ppt is used.