公开(公告)号：US20070122291A1

公开(公告)日：2007-05-31

申请号：US11581464

申请日：2006-10-17

申请人： Katsuya Okumura ,  Tetsuya Toyoda ,  Tomohiro Ito ,  Akira Murakumo ,  Atsuyuki Sakai

发明人： Katsuya Okumura ,  Tetsuya Toyoda ,  Tomohiro Ito ,  Akira Murakumo ,  Atsuyuki Sakai

IPC分类号： F04B49/00

CPC分类号： F04B49/08

摘要： [Problem] To always perform accurate pressure feedback control, and control the discharge flow rate of liquid chemical with high precision, even in situations in which the pressure setting value of the operation pressure differs due to changes in the type of liquid chemical, etc. [Means of solution] A pump 11 has a pump chamber 13 and an operation chamber 14 separated by a diaphragm 12 comprised of a flexible membrane, and performs the intake and discharge of liquid chemical in accordance with the change in pressure inside the operation chamber 14. An electro-pneumatic regulator 32 supplies operation air to the operation chamber 14. In addition, in the present system, a plurality of pressure sensors 51, 63 having different pressure detection ranges is provided as pressure detection means for detecting the operation air pressure. A controller 40 selectively employs any of the detection results of the plurality of sensors 51, 63 in accordance with the pressure setting value of the operation air that is set for each use, and performs pressure feedback control.

摘要翻译： [问题]为了始终进行精确的压力反馈控制，并且即使在由于液体化学品的类型的变化而导致的操作压力的设定值不同的情况下也能够高精度地控制液体化学品的排出流量。 [解决方案]泵11具有由柔性膜构成的隔膜12隔开的泵室13和操作室14，并根据操作室14内的压力变化进行液体化学品的进出。 。 电动气动调节器32将操作空气供给到操作室14。 此外，在本系统中，具有不同压力检测范围的多个压力传感器51,63被设置为用于检测操作空气压力的压力检测装置。 控制器40根据为每次使用设定的操作空气的压力设定值选择性地使用多个传感器51,63的检测结果中的任一个，并进行压力反馈控制。

公开(公告)号：US07084005B2

公开(公告)日：2006-08-01

申请号：US10855889

申请日：2004-05-28

申请人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

发明人： Katsuya Okumura ,  Koji Maruyama ,  Kazuya Nagaseki ,  Akiteru Rai

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.

摘要翻译： 本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接， 其制造方法。 根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。 第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。 基本上所有的第一基板的所有后表面被结合到布线结构的主表面。 形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

公开(公告)号：US20060131696A1

公开(公告)日：2006-06-22

申请号：US11350027

申请日：2006-02-09

申请人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

发明人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

IPC分类号： H01L29/06 ,  H01L23/02

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/974 ,  H01L2924/00

摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

公开(公告)号：US07057259B2

公开(公告)日：2006-06-06

申请号：US10101337

申请日：2002-03-20

申请人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

发明人： Tsunetoshi Arikado ,  Masao Iwase ,  Soichi Nadahara ,  Yuso Udo ,  Yukihiro Ushiku ,  Shinichi Nitta ,  Moriya Miyashita ,  Junji Sugamoto ,  Hiroaki Yamada ,  Hajime Nagano ,  Katsujiro Tanzawa ,  Hiroshi Matsushita ,  Norihiko Tsuchiya ,  Katsuya Okumura

IPC分类号： H01L29/06

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54493 ,  H01L2924/0002 ,  Y10S438/974 ,  H01L2924/00

摘要： A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

公开(公告)号：US20050276928A1

公开(公告)日：2005-12-15

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C14/00 ,  C23F4/00 ,  C25D17/10 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

公开(公告)号：US20050244049A1

公开(公告)日：2005-11-03

申请号：US11097139

申请日：2005-04-04

申请人： Hiroyuki Onishi ,  Yasushi Sasa ,  Manabu Tsujimura ,  Toshifumi Kinba ,  Katsuya Okumura

发明人： Hiroyuki Onishi ,  Yasushi Sasa ,  Manabu Tsujimura ,  Toshifumi Kinba ,  Katsuya Okumura

IPC分类号： G01N23/225 ,  G06K9/00 ,  G06T1/00 ,  G06T5/00 ,  G06T7/00 ,  H01L21/66

CPC分类号： H01J37/26 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/29 ,  H01J2237/24592

摘要： In a pattern inspection apparatus (1), an electron beam emission part (31) emits an electron beam onto a substrate (9) and an image acquisition part (33) detects electrons from the substrate (9) to acquire a grayscale inspection image of the substrate (9). A binary reference image generated from design data (81) is multivalued by a grayscale image generator (52) on the basis of a histogram of pixel values in the inspection image to generate a grayscale reference image. A comparator (53) compares the inspection image with the reference image. The pattern inspection apparatus (1) can thereby perform an inspection of a very small pattern on the substrate (9) on the basis of the design data (81).

摘要翻译： 在图案检查装置（1）中，电子束发射部（31）将电子束发射到基板（9）上，图像获取部（33）从基板（9）检测电子，获得灰度检查图像 基板（9）。 基于检查图像中的像素值的直方图，通过灰度图像生成器（52）将从设计数据（81）生成的二进制参考图像多值化以生成灰度参考图像。 比较器（53）将检查图像与参考图像进行比较。 因此，图案检查装置（1）能够基于设计数据（81）在基板（9）上进行非常小的图案的检查。

公开(公告)号：US06946387B2

公开(公告)日：2005-09-20

申请号：US10650974

申请日：2003-08-29

申请人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

发明人： Junichi Wada ,  Atsuko Sakata ,  Tomio Katata ,  Takamasa Usui ,  Masahiko Hasunuma ,  Hideki Shibata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76867 ,  H01L21/2855 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L21/76889

摘要： A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在具有布线层的Si衬底上形成绝缘膜，形成与布线层连接的接触孔和绝缘膜中的布线槽，用Si 膜，依次在基板上形成Al膜和Ti膜，进行热处理，从而将Al膜替代为Ti膜，并使Si膜被Ti膜吸收，由此填充接触孔 和Al膜的布线槽，除去由Ti膜和多余Ti吸收Si膜形成的由Ti硅化物构成的Ti / Ti硅化物，由此用Al塞填充接触孔，并填充 布线槽与Al接线。

公开(公告)号：US20050124164A1

公开(公告)日：2005-06-09

申请号：US11033871

申请日：2005-01-13

申请人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

发明人： Atsuko Sakata ,  Keiichi Sasaki ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Hirotaka Nishino

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L24/03 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/11001 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/81805

摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 μm or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.

摘要翻译： 在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。 然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。 此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。 因此，凸块电极结构完成。

公开(公告)号：US20050118516A1

公开(公告)日：2005-06-02

申请号：US11030963

申请日：2005-01-10

申请人： Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satosh

发明人： Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satosh

IPC分类号： G03F1/20 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/3205 ,  G03B27/42 ,  G03C5/00 ,  G03F9/00 ,  H01L21/4763

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/50 ,  H01J37/3174 ,  H01J2237/31788 ,  H01J2237/31794

摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.

摘要翻译： 本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时， 多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。 因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。 本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

公开(公告)号：US06846750B1

公开(公告)日：2005-01-25

申请号：US09604724

申请日：2000-06-28

申请人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

发明人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/30 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0331 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/76816 ,  H01L21/7682

摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。 根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。 另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。