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    SEMICONDUCTOR DEVICE
    82.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150138733A1

    公开(公告)日：2015-05-21

    申请号：US14400105

    申请日：2012-08-24

    申请人： Ryo Tsuda ,  Kazuhiro Morishita

    发明人： Ryo Tsuda ,  Kazuhiro Morishita

    IPC分类号： H05K7/02 ,  H01L23/04 ,  H01L25/10

    CPC分类号： H05K7/02 ,  H01L23/04 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/73 ,  H01L25/105 ,  H01L25/115 ,  H01L25/18 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H05K1/0263 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Each of semiconductor module includes a semiconductor chip, a case surrounding the semiconductor chip, and a main electrode connected to the semiconductor chip and led out to an upper surface of case. A connecting electrode is connected and fixed to the main electrodes of the adjacent semiconductor modules. The connecting electrode is formed only of a metal plate. The rated current, the rated voltage and the circuit configuration can easily be changed by changing the connection using the connecting electrode, thus enabling reduction of the design time and facilitating manufacture management. Only a malfunctioning one of the semiconductor modules may be replaced. There is, therefore, no need to replace the entire device. The connecting electrode is formed of an electrically conductive plate and, therefore, enables reduction of the number of component parts and reduction of the device in size in comparison with the conventional wiring bus bar.

    摘要翻译： 半导体模块中的每一个包括半导体芯片，围绕半导体芯片的壳体以及连接到半导体芯片并被引导到壳体的上表面的主电极。 连接电极连接固定在相邻半导体模块的主电极上。 连接电极仅由金属板形成。 通过改变使用连接电极的连接，可以方便地改变额定电流，额定电压和电路配置，从而减少设计时间，便于制造管理。 可以仅替换半导体模块中的故障的一个。 因此，无需更换整个设备。 连接电极由导电板形成，因此与传统的布线母线相比，能够减少部件数量和减小装置的尺寸。

    Multichip package structure
    83.
    发明授权
    Multichip package structure 有权
    多芯片封装结构

    公开(公告)号：US09018662B2

    公开(公告)日：2015-04-28

    申请号：US14076489

    申请日：2013-11-11

    申请人： Paragon Semiconductor Lighting Technology Co., Ltd.

    发明人： Chia-Tin Chung ,  Shih-Neng Tai

    IPC分类号： H01L33/50 ,  H01L25/075 ,  H05B33/08

    CPC分类号： H01L25/0753 ,  H01L23/24 ,  H01L25/167 ,  H01L33/60 ,  H01L2224/48137 ,  H01L2224/48227 ,  H05B33/0803 ,  H05B33/0806 ,  H05B33/0827 ,  H05K1/05 ,  H05K3/284 ,  H05K2201/10106

    摘要： A multichip package structure includes a metal substrate, a circuit substrate and a light-emitting module. The metal substrate has a first mirror plane area and a second mirror plane area. The circuit substrate is disposed on the metal substrate. The circuit substrate includes a plurality of first conductive pads, a plurality of second conductive pads, a first passing opening for exposing the first mirror plane area, and a second passing opening for exposing the second mirror plane area. The light-emitting module includes a plurality of light-emitting units disposed on the first mirror plane area. Each light-emitting unit includes a plurality of LED chips disposed on the first mirror plane area. The LED chips of each light-emitting unit are electrically connected between the first conductive pad and the second conductive pad in series. Thus, the heat-dissipating efficiency and the light-emitting effect of the multichip package structure can be increased.

    摘要翻译： 多芯片封装结构包括金属基板，电路基板和发光模块。 金属基板具有第一镜面区域和第二镜面区域。 电路基板设置在金属基板上。 电路基板包括多个第一导电焊盘，多个第二导电焊盘，用于暴露第一镜面平面区域的第一通过开口和用于暴露第二镜面区域的第二通过开口。 发光模块包括设置在第一镜面区域上的多个发光单元。 每个发光单元包括设置在第一镜面区域上的多个LED芯片。 每个发光单元的LED芯片串联地电连接在第一导电焊盘和第二导电焊盘之间。 因此，可以提高多芯片封装结构的散热效率和发光效果。

    SEMICONDUCTOR DEVICE
    86.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150008570A1

    公开(公告)日：2015-01-08

    申请号：US14245261

    申请日：2014-04-04

    申请人： Mitsubishi Electric Corporation

    发明人： Kiyoshi ARAI ,  Osamu USUI

    IPC分类号： H01L23/367 ,  H01L23/42 ,  H01L23/492

    CPC分类号： H01L23/3675 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/42 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49811 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor device according to the present invention includes a base plate, an insulating layer provided on an upper surface of the base plate, a metal pattern provided on an upper surface of the insulating layer, a semiconductor element bonded to the metal pattern, and an insulating substrate disposed to be in contact with an upper surface of the semiconductor element. An end of the insulating substrate is located outside the semiconductor element in plan view. The end of the insulating substrate and the metal pattern are directly or indirectly bonded. The semiconductor element includes an electrode on the upper surface. A portion of the insulating substrate, in which the electrode on the upper surface of the semiconductor element overlaps in plan view, is provided with a through-hole.

    摘要翻译： 根据本发明的半导体器件包括基板，设置在基板的上表面上的绝缘层，设置在绝缘层的上表面上的金属图案，接合到金属图案的半导体元件，以及 绝缘基板，设置成与半导体元件的上表面接触。 在平面图中，绝缘基板的一端位于半导体元件的外侧。 绝缘基板的端部和金属图案直接或间接地结合。 半导体元件包括在上表面上的电极。 在半导体元件的上表面上的电极在平面图中重叠的绝缘基板的一部分设置有通孔。

    SEMICONDUCTOR DEVICE
    87.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150008568A1

    公开(公告)日：2015-01-08

    申请号：US14319414

    申请日：2014-06-30

    申请人： SEIKO INSTRUMENTS INC.

    发明人： Koji TSUKAGOSHI ,  Sadao OKU ,  Hiroyuki FUJITA ,  Keiichiro HAYASHI ,  Masaru AKINO

    IPC分类号： H01L23/495 ,  H01L23/31

    CPC分类号： H01L23/3114 ,  H01L23/24 ,  H01L23/49551 ,  H01L23/49861 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00012

    摘要： Provided is a semiconductor device including a package having a hollow portion, which can meet the need of reduction in size and thickness. The semiconductor device includes: a resin molded member (1) including a hollow portion (10) having an inner bottom surface on which a semiconductor chip (6) is mounted, a surrounding portion (1b) that surrounds the hollow portion (10), and a bottom surface portion (1a); an inner lead (2e, 2f); and an outer lead (2a, 2b) exposed from the resin molded member (1). The inner lead buried in the molded member (1) includes an L-shaped lead extending portion having a through hole formed therethrough.

    摘要翻译： 提供一种包括具有中空部分的封装的半导体器件，其可以满足尺寸和厚度的减小的需要。 半导体装置包括：具有中空部（10）的树脂成形体（1），具有安装有半导体芯片（6）的内底面，围绕中空部（10）的环绕部（1b） 和底面部分（1a）; 内引线（2e，2f）; 和从树脂成形体（1）露出的外引线（2a，2b）。 埋在模制构件（1）中的内部引线包括具有穿过其形成的通孔的L形引线延伸部分。

    Power module production method, and power module produced thereby
    88.
    发明授权
    Power module production method, and power module produced thereby 有权
    电源模块生产方法，以及由此生产的电源模块

    公开(公告)号：US08881386B2

    公开(公告)日：2014-11-11

    申请号：US13520820

    申请日：2010-12-20

    申请人： Yuji Yoshida

    发明人： Yuji Yoshida

    IPC分类号： H05K3/34 ,  H01L23/24 ,  H05K7/20 ,  H01L23/373 ,  H01L23/42

    CPC分类号： H05K7/209 ,  H01L23/24 ,  H01L23/3735 ,  H01L23/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/92247 ,  H05K7/20472 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/4913 ,  Y10T29/49144 ,  H01L2924/00014

    摘要： There is provided a power module production method that is capable of stably producing a power module with highly reliable properties, and so forth. The power module production method produces a power module 1 by stacking a cooler 5, an insulating resin sheet 4, a heat sink block 3, and a semiconductor chip 2, wherein a first insulating resin sheet 41, which forms a lower layer of the insulating resin sheet 4, is first bonded to the cooler 5 by thermal compression. Next, with a second insulating resin sheet 42, which forms an upper layer of the insulating resin sheet 4, interposed between the first insulating resin sheet 41 and the heat sink block 3, the second insulating resin sheet 42 is bonded to the first insulating resin sheet 41 by thermal compression, and the heat sink block 3 is bonded to the second insulating resin sheet 42 by thermal compression. The semiconductor chip 2 is then soldered onto the heat sink block 3. Thus, bonding defects at the respective bonding interfaces are prevented, and dielectric breakdown of the insulating resin sheet 4 is prevented.

    摘要翻译： 提供了能够稳定地生产具有高度可靠性能的功率模块等的功率模块制造方法。 功率模块制造方法通过堆叠冷却器5，绝缘树脂片4，散热块3和半导体芯片2来制造功率模块1，其中形成绝缘的下层的第一绝缘树脂片41 树脂片4首先通过热压接而与冷却器5接合。 接着，在形成绝缘树脂片4的上层的第二绝缘树脂片42插入在第一绝缘树脂片41和散热块3之间，第二绝缘树脂片42与第一绝缘树脂 片材41通过热压缩，并且散热块3通过热压接接合到第二绝缘树脂片42。 然后将半导体芯片2焊接到散热块3上。因此，防止了在各个接合界面处的接合缺陷，并且防止了绝缘树脂片4的绝缘击穿。