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    EPITAXIAL FORMATION SUPPORT STRUCTURES AND ASSOCIATED METHODS
    6.
    发明申请
    EPITAXIAL FORMATION SUPPORT STRUCTURES AND ASSOCIATED METHODS 有权
    外来形成支持结构和相关方法

    公开(公告)号：US20110136281A1

    公开(公告)日：2011-06-09

    申请号：US12961370

    申请日：2010-12-06

    申请人： Calvin Wade Sheen

    发明人： Calvin Wade Sheen

    IPC分类号： H01L21/324 ,  H01L33/30

    CPC分类号： H01L33/32 ,  B28B1/16 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/48

    摘要： Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.

    摘要翻译： 本文公开了外延形成支撑结构和制造外延形成支撑结构和固态照明装置的相关方法。 在几个实施例中，制造外延形成支撑衬底的方法可以包括形成具有第一侧，与第一侧相对的第二侧和基本类似于N型氮化镓的热膨胀系数的未固化支撑衬底。 该方法还可以包括将未固化的支撑衬底的第一侧定位在第一参考板的第一表面上，并将第二参考板的第二表面定位在第二侧上以形成堆叠。 第一和第二表面可以包括均匀的平坦部分。 该方法还可以包括烧结堆叠以烧结未固化的支撑衬底。 支撑基板的至少一侧可以形成基本均匀平坦的平坦表面。