公开(公告)号：US06678949B2

公开(公告)日：2004-01-20

申请号：US09886326

申请日：2001-06-21

申请人： Chandrika Prasad ,  Roy Yu ,  Richard L. Canull ,  Giulio DiGiacomo ,  Ajay P. Giri ,  Lewis S. Goldmann ,  Kimberley A. Kelly ,  Bouwe W. Leenstra ,  Voya R. Markovich ,  Eric D. Perfecto ,  Sampath Purushothaman ,  Joseph M. Sullivan

发明人： Chandrika Prasad ,  Roy Yu ,  Richard L. Canull ,  Giulio DiGiacomo ,  Ajay P. Giri ,  Lewis S. Goldmann ,  Kimberley A. Kelly ,  Bouwe W. Leenstra ,  Voya R. Markovich ,  Eric D. Perfecto ,  Sampath Purushothaman ,  Joseph M. Sullivan

IPC分类号： H05K334

CPC分类号： H01L21/6835 ,  H01L21/4857 ,  H01L23/16 ,  H01L23/49833 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H05K1/141 ,  H05K3/20 ,  H05K3/284 ,  H05K3/3436 ,  H05K3/467 ,  H05K7/023 ,  H05K2201/049 ,  H05K2201/10977 ,  H05K2201/2036 ,  H05K2203/0182 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49165 ,  Y10T29/49169 ,  Y10T29/49174 ,  Y10T29/49211 ,  Y10T29/49213 ,  H01L2924/00 ,  H01L2924/00014

摘要： A structure for mounting electronic devices. The structure uses a non-conductive, compliant spacer interposed between an underlying carrier and an overlying thin film. The spacer includes a pattern of through-vias which matches opposing interconnects on opposing surfaces of the carrier and the thin film. In this way, solder connections can extend in the through-vias to electrically connect the thin film to the carrier and smooth out topography. In a related process for forming the structure, the thin film is built on a first sacrificial carrier and then further processed on a second sacrificial carrier to keep it from distorting, expanding, or otherwise suffering adversely during its processing. The solder connections between the thin film and the carrier are formed using a closed solder joining process. The spacer is used with laminate cards to create thermal stress release structures on portions of the cards carrying a thin film.

摘要翻译： 一种用于安装电子设备的结构。 该结构使用介于下面的载体和上覆薄膜之间的非导电的兼容间隔物。 间隔件包括通孔的图形，其与载体和薄膜的相对表面上的相对互连匹配。 以这种方式，焊接连接可以在通孔中延伸，以将薄膜电连接到载体上并平滑地形。 在用于形成结构的相关方法中，薄膜建立在第一牺牲载体上，然后在第二牺牲载体上进一步处理，以防止其在其加工期间变形，膨胀或以其它方式受到不利影响。 使用封闭的焊料接合工艺形成薄膜和载体之间的焊接连接。 间隔件与层压卡一起使用以在携带薄膜的卡的部分上产生热应力释放结构。

公开(公告)号：US06281452B1

公开(公告)日：2001-08-28

申请号：US09204851

申请日：1998-12-03

申请人： Chandrika Prasad ,  Roy Yu ,  Richard L. Canull ,  Giulio DiGiacomo ,  Ajay P. Giri ,  Lewis S. Goldmann ,  Kimberley A. Kelly ,  Bouwe W. Leenstra ,  Voya R. Markovich ,  Eric D. Perfecto ,  Sampath Purushothaman ,  Joseph M. Sullivan

发明人： Chandrika Prasad ,  Roy Yu ,  Richard L. Canull ,  Giulio DiGiacomo ,  Ajay P. Giri ,  Lewis S. Goldmann ,  Kimberley A. Kelly ,  Bouwe W. Leenstra ,  Voya R. Markovich ,  Eric D. Perfecto ,  Sampath Purushothaman ,  Joseph M. Sullivan

IPC分类号： H01R1204

CPC分类号： H01L21/6835 ,  H01L21/4857 ,  H01L23/16 ,  H01L23/49833 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H05K1/141 ,  H05K3/20 ,  H05K3/284 ,  H05K3/3436 ,  H05K3/467 ,  H05K7/023 ,  H05K2201/049 ,  H05K2201/10977 ,  H05K2201/2036 ,  H05K2203/0182 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49165 ,  Y10T29/49169 ,  Y10T29/49174 ,  Y10T29/49211 ,  Y10T29/49213 ,  H01L2924/00 ,  H01L2924/00014

摘要： A structure for mounting electronic devices which uses a non-conductive, compliant spacer interposed between an underlying carrier and an overlying thin film. The spacer includes a pattern of through-vias which matches opposing interconnects on opposing surfaces of the carrier and the thin film. In this way, solder connections can extend in the through-vias to electrically connect the thin film to the carrier and smooth out topography. In a related process for forming the structure, the thin film is built on a first sacrificial carrier and then further processed on a second sacrificial carrier to keep it from distorting, expanding, or otherwise suffering adversely during its processing. The solder connections between the thin film and the carrier are formed using a closed solder joining process. The spacer is used with laminate cards to create thermal stress release structures on portions of the cards carrying a thin film.

摘要翻译： 一种用于安装电子器件的结构，其使用插入在下面的载体和上覆薄膜之间的非导电兼容间隔物。 间隔件包括通孔的图形，其与载体和薄膜的相对表面上的相对互连匹配。 以这种方式，焊接连接可以在通孔中延伸，以将薄膜电连接到载体上并平滑地形。 在用于形成结构的相关方法中，薄膜建立在第一牺牲载体上，然后在第二牺牲载体上进一步处理，以防止其在其加工期间变形，膨胀或以其它方式受到不利影响。 使用封闭的焊料接合工艺形成薄膜和载体之间的焊接连接。 间隔件与层压卡一起使用以在携带薄膜的卡的部分上产生热应力释放结构。

公开(公告)号：US5436412A

公开(公告)日：1995-07-25

申请号：US102027

申请日：1993-08-03

申请人： Umar M. U. Ahmad ,  Ananda H. Kumar ,  Eric D. Perfecto ,  Chandrika Prasad ,  Sampath Purushothaman ,  Sudipta K. Ray

发明人： Umar M. U. Ahmad ,  Ananda H. Kumar ,  Eric D. Perfecto ,  Chandrika Prasad ,  Sampath Purushothaman ,  Sudipta K. Ray

IPC分类号： H01L23/12 ,  H01L23/32 ,  H01L23/498 ,  H01L23/538 ,  H05K1/03 ,  H05K1/11 ,  H05K3/00 ,  H05K3/40 ,  H05K3/46 ,  H05K1/02

CPC分类号： H05K1/113 ,  H01L23/49816 ,  H01L23/49866 ,  H01L23/5383 ,  H01L2224/48463 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H05K1/0306 ,  H05K2201/0154 ,  H05K2201/0195 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2201/0979 ,  H05K3/0041 ,  H05K3/4076 ,  H05K3/4605 ,  H05K3/467

摘要： An electrical interconnect structure for connecting a substrate to the next level of packaging or to a semiconductor device. The interconnect structure includes at least two layers of polymeric material, one of the layers having a capture pad and the second of the layers having a bonding pad electrically connected to the capture pad. The bonding pad and the second layer of polymeric material are at the same height so that the bonding pad is level with the second layer of polymeric material. Finally, there is a cap of electrically conducting metallization on the bonding pad and extending beyond the second layer of polymeric material. The cap is of a different composition than the bonding pad.

摘要翻译： 一种用于将衬底连接到下一级封装或半导体器件的电互连结构。 所述互连结构包括至少两层聚合材料，所述层中的一个具有捕获垫，并且所述层中的第二层具有电连接到所述捕获垫的接合焊盘。 接合焊盘和第二层聚合物材料处于相同的高度，使得焊盘与第二层聚合物材料平齐。 最后，在焊盘上存在导电金属化的帽，并延伸超过第二层聚合物材料。 盖子具有与接合垫不同的成分。

公开(公告)号：US6083375A

公开(公告)日：2000-07-04

申请号：US184169

申请日：1998-11-02

申请人： Tien-Jen Cheng ,  Ajay P. Giri ,  Ashwani K. Malhotra ,  John R. Pennacchia ,  Eric D. Perfecto ,  Roy Yu

发明人： Tien-Jen Cheng ,  Ajay P. Giri ,  Ashwani K. Malhotra ,  John R. Pennacchia ,  Eric D. Perfecto ,  Roy Yu

IPC分类号： H01L21/60 ,  C25D7/12 ,  H01L21/48 ,  H05K3/40 ,  C25D5/02 ,  C23C28/02 ,  C25D5/10 ,  C25D5/12

CPC分类号： H01L21/4853 ,  C25D7/123 ,  H01L24/16 ,  H05K3/4007 ,  Y10S428/929 ,  Y10S428/935 ,  Y10T428/12847 ,  Y10T428/12875 ,  Y10T428/12889

摘要： A process for producing a terminal metal pad structure electrically interconnecting a package and other components. More particularly, the invention encompasses a process for producing a plurality of corrosion-resistant terminal metal pads. Each pad includes a base pad containing copper which is encapsulated within a series of successively electroplated metal encapsulating films to produce a corrosion-resistant terminal metal pad.

摘要翻译： 一种用于制造电连接封装和其它部件的端子金属焊盘结构的方法。 更具体地，本发明包括用于制造多个耐腐蚀端子金属焊盘的方法。 每个焊盘包括一个包含铜的基座，其被封装在一系列连续电镀的金属封装膜中以产生耐腐蚀的端子金属焊盘。

公开(公告)号：US06235412B1

公开(公告)日：2001-05-22

申请号：US09544075

申请日：2000-04-06

申请人： Tien-Jen Cheng ,  Ajay P. Giri ,  Ashwani K. Malhotra ,  John R. Pennacchia ,  Eric D. Perfecto ,  Roy Yu

发明人： Tien-Jen Cheng ,  Ajay P. Giri ,  Ashwani K. Malhotra ,  John R. Pennacchia ,  Eric D. Perfecto ,  Roy Yu

IPC分类号： B32B1500

CPC分类号： H01L21/4853 ,  C25D7/123 ,  H01L24/16 ,  H05K3/4007 ,  Y10S428/929 ,  Y10S428/935 ,  Y10T428/12847 ,  Y10T428/12875 ,  Y10T428/12889

摘要： A process for producing a terminal metal pad structure electrically interconnecting a package and other components. More particularly, the invention encompasses a process for producing a plurality of corrosion-resistant terminal metal pads. Each pad includes a base pad containing copper which is encapsulated within a series of successively electroplated metal encapsulating films to produce a corrosion-resistant terminal metal pad.

摘要翻译： 一种用于制造电连接封装和其它部件的端子金属焊盘结构的方法。 更具体地，本发明包括用于制造多个耐腐蚀端子金属焊盘的方法。 每个焊盘包括一个包含铜的基座，其被封装在一系列连续电镀的金属封装膜中以产生耐腐蚀的端子金属焊盘。

公开(公告)号：US06183588B2

公开(公告)日：2001-02-06

申请号：US09460488

申请日：1999-12-14

申请人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

发明人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

IPC分类号： B32B3100

CPC分类号： B32B43/00 ,  B32B2310/0843 ,  B32B2311/00 ,  H01L21/6835 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/3025 ,  H05K3/007 ,  H05K3/025 ,  H05K3/28 ,  H05K3/4614 ,  H05K3/4623 ,  H05K3/467 ,  H05K2201/09527 ,  H05K2201/10666 ,  H05K2203/016 ,  H05K2203/107 ,  Y10S156/922 ,  Y10S438/94 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T428/12528 ,  Y10T428/12583

摘要： A process for fabricating and releasing a thin-film structure from a primary carrier for further processing. The thin-film structure is built on a metal interconnect disposed on a dielectric layer which, in turn, is deposited on a primary carrier. The thin-film structure and metal interconnect are released from the dielectric layer and primary carrier along a release interface defined between the metal interconnect and the dielectric film. Release is accomplished by disturbing the interface, either by laser ablation or dicing. The process of the present invention has at least three, specific applications: (1) the thin-film structure and metal interconnect can be released to yield a free-standing film; (2) the thin-film structure and metal interconnect can be laminated onto a permanent substrate (when building top-side down structures) and then released; and (3) the thin-film structure can be transferred to a secondary temporary carrier (when building top-side up structures) for further processing and testing, then transferred to a permanent substrate before releasing the thin-film structure and metal interconnect.

摘要翻译： 用于从主载体制造和释放薄膜结构以进一步处理的工艺。 薄膜结构建立在设置在电介质层上的金属互连上，其又沉积在主载体上。 薄膜结构和金属互连通过限定在金属互连和电介质膜之间的释放界面从电介质层和初级载体释放。 通过激光烧蚀或切割来干扰界面来实现释放。 本发明的方法具有至少三个具体应用：（1）可以释放薄膜结构和金属互连以产生独立的膜; （2）薄膜结构和金属互连可以层压在永久性基板上（当构建顶部向下结构时）然后释放; （3）可以将薄膜结构转移到二次临时载体（当构建顶侧上部结构）进行进一步的加工和测试时，在释放薄膜结构和金属互连之前转移到永久基板。

公开(公告)号：US6143117A

公开(公告)日：2000-11-07

申请号：US460484

申请日：1999-12-14

申请人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

发明人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

IPC分类号： B32B43/00 ,  B44C1/165 ,  H01L21/68 ,  H05K3/00 ,  H05K3/02 ,  H05K3/28 ,  H05K3/46

CPC分类号： B32B43/00 ,  H01L21/6835 ,  H05K3/025 ,  H05K3/4614 ,  B32B2310/0843 ,  B32B2311/00 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/3025 ,  H05K2201/09527 ,  H05K2201/10666 ,  H05K2203/016 ,  H05K2203/107 ,  H05K3/007 ,  H05K3/28 ,  H05K3/4623 ,  H05K3/467 ,  Y10S156/922 ,  Y10S438/94 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T428/12528 ,  Y10T428/12583

摘要： A process for fabricating and releasing a thin-film structure from a primary carrier for further processing. The thin-film structure is built on a metal interconnect disposed on a dielectric layer which, in turn, is deposited on a primary carrier. The thin-film structure and metal interconnect are released from the dielectric layer and primary carrier along a release interface defined between the metal interconnect and the dielectric film. Release is accomplished by disturbing the interface, either by laser ablation or dicing. The process of the present invention has at least three, specific applications: (1) the thin-film structure and metal interconnect can be released to yield a free-standing film; (2) the thin-film structure and metal interconnect can be laminated onto a permanent substrate (when building top-side down structures) and then released; and (3) the thin-film structure can be transferred to a secondary temporary carrier (when building top-side up structures) for further processing and testing, then transferred to a permanent substrate before releasing the thin-film structure and metal interconnect.

摘要翻译： 用于从主载体制造和释放薄膜结构以进一步处理的工艺。 薄膜结构建立在设置在电介质层上的金属互连上，其又沉积在主载体上。 薄膜结构和金属互连通过限定在金属互连和电介质膜之间的释放界面从电介质层和初级载体释放。 通过激光烧蚀或切割来干扰界面来实现释放。 本发明的方法具有至少三个具体应用：（1）可以释放薄膜结构和金属互连以产生独立的膜; （2）薄膜结构和金属互连可以层压在永久性基板上（当构建顶部向下结构时）然后释放; （3）可以将薄膜结构转移到二次临时载体（当构建顶侧上部结构）进行进一步的加工和测试时，在释放薄膜结构和金属互连之前转移到永久基板。

公开(公告)号：US6036809A

公开(公告)日：2000-03-14

申请号：US250882

申请日：1999-02-16

申请人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

发明人： Kimberley A. Kelly ,  Ashwani K. Malhotra ,  Eric D. Perfecto ,  Roy Yu

IPC分类号： B32B43/00 ,  B44C1/165 ,  H01L21/68 ,  H05K3/00 ,  H05K3/02 ,  H05K3/28 ,  H05K3/46 ,  B32B31/00 ,  H01B13/00 ,  H01L29/12 ,  B32B4/00

CPC分类号： B32B43/00 ,  H01L21/6835 ,  H05K3/025 ,  H05K3/4614 ,  B32B2310/0843 ,  B32B2311/00 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2924/3025 ,  H05K2201/09527 ,  H05K2201/10666 ,  H05K2203/016 ,  H05K2203/107 ,  H05K3/007 ,  H05K3/28 ,  H05K3/4623 ,  H05K3/467 ,  Y10S156/922 ,  Y10S438/94 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T428/12528 ,  Y10T428/12583

摘要： A process for fabricating and releasing a thin-film structure from a primary carrier for further processing. The thin-film structure is built on a metal interconnect disposed on a dielectric layer which, in turn, is deposited on a primary carrier. The thin-film structure and metal interconnect are released from the dielectric layer and primary carrier along a release interface defined between the metal interconnect and the dielectric film. Release is accomplished by disturbing the interface, either by laser ablation or dicing. The process of the present invention has at least three, specific applications: (1) the thin-film structure and metal interconnect can be released to yield a free-standing film; (2) the thin-film structure and metal interconnect can be laminated onto a permanent substrate (when building top-side down structures) and then released; and (3) the thin-film structure can be transferred to a secondary temporary carrier (when building top-side up structures) for further processing and testing, then transferred to a permanent substrate before releasing the thin-film structure and metal interconnect.

摘要翻译： 用于从主载体制造和释放薄膜结构以进一步处理的工艺。 薄膜结构建立在设置在电介质层上的金属互连上，其又沉积在主载体上。 薄膜结构和金属互连通过限定在金属互连和电介质膜之间的释放界面从电介质层和初级载体释放。 通过激光烧蚀或切割来干扰界面来实现释放。 本发明的方法具有至少三个具体应用：（1）可以释放薄膜结构和金属互连以产生独立的膜; （2）薄膜结构和金属互连可以层压在永久性基板上（当构建顶部向下结构时）然后释放; （3）可以将薄膜结构转移到二次临时载体（当构建顶侧上部结构）进行进一步的加工和测试时，在释放薄膜结构和金属互连之前转移到永久基板。

公开(公告)号：US5483105A

公开(公告)日：1996-01-09

申请号：US233025

申请日：1994-04-25

申请人： Suryanarayana Kaja ,  Eric D. Perfecto ,  William H. Price ,  Sampath Purushothaman ,  Srinivasa N. Reddy ,  Vivek M. Sura ,  George E. White

发明人： Suryanarayana Kaja ,  Eric D. Perfecto ,  William H. Price ,  Sampath Purushothaman ,  Srinivasa N. Reddy ,  Vivek M. Sura ,  George E. White

IPC分类号： H01R12/32 ,  H01L23/498 ,  H01R12/04 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49811 ,  H05K1/111 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K2201/09736 ,  H05K2201/098 ,  Y02P70/611

摘要： A ceramic substrate pad used for establishing brazed connection between a pin and the substrate in the packaging of microelectronic semiconductor circuit chip. The pad is characterized by a stepped setback in the upper surface thereof which setback is oxidized to prevent wetting by the brazing alloy which bonds the pin to the pad. Stresses attributable to the brazing are isolated from the setback area and thus have reduced effect in causing cracking at the edges of the pad-substrate interface.

摘要翻译： 一种用于在微电子半导体电路芯片的封装中在引脚和衬底之间建立钎焊连接的陶瓷衬底焊盘。 该焊盘的特征在于在其上表面具有阶梯状的挫折，其挫折被氧化以防止通过将销钉固定到焊盘的钎焊合金的润湿。 由于钎焊产生的应力与塌陷区域隔离，因此在焊盘 - 衬底界面的边缘处产生破裂的效果降低。

公开(公告)号：US5464682A

公开(公告)日：1995-11-07

申请号：US166424

申请日：1993-12-14

申请人： Eric D. Perfecto ,  Chandrika Prasad ,  Keshav Prasad ,  Gordon J. Robbins ,  Madhavan Swaminathan ,  George E. White

发明人： Eric D. Perfecto ,  Chandrika Prasad ,  Keshav Prasad ,  Gordon J. Robbins ,  Madhavan Swaminathan ,  George E. White

IPC分类号： H01L23/538 ,  H05K1/03 ,  H05K1/11 ,  H05K3/40 ,  H05K3/46 ,  B32B9/00

CPC分类号： H05K1/116 ,  H01L23/5384 ,  H01L23/5386 ,  H01L2224/16225 ,  H01L2924/15312 ,  H05K1/0306 ,  H05K1/113 ,  H05K1/115 ,  H05K2201/0367 ,  H05K3/4007 ,  H05K3/4611 ,  H05K3/4629 ,  H05K3/467 ,  Y10S428/901 ,  Y10T428/24926

摘要： A device includes a ceramic substrate. A ceramic via is defined within the ceramic substrate at an actual location which differs from a designed desired location for the ceramic via. A minimal capture pad electrically communicates the actual location with the designed desired location. The minimal capture pad contains a ceramic via contact portion, a thin film stud contact portion, and a connecting portion; and each of the three is configured to be as small as permitted to limit the capacitances produced by the capture pad.

摘要翻译： 一种器件包括陶瓷衬底。 在陶瓷衬底内的陶瓷通孔限定在不同于用于陶瓷通孔的设计的所需位置的实际位置。 最小捕获垫将实际位置与设计的所需位置电连通。 最小捕获垫包含陶瓷通孔接触部分，薄膜螺柱接触部分和连接部分; 并且三个中的每一个被配置为尽可能小以限制由捕获垫产生的电容。