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    Through silicon via keep out zone formation along different crystal orientations
    7.
    发明授权
    Through silicon via keep out zone formation along different crystal orientations 有权
    通过硅通过沿着不同的晶体取向保持区域形成

    公开(公告)号：US08604619B2

    公开(公告)日：2013-12-10

    申请号：US13302653

    申请日：2011-11-22

    申请人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

    发明人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

    IPC分类号： H01L23/48

    CPC分类号： H01L23/562 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.

    摘要翻译： 为硅通孔（TSV）形成保留区（KOZ）。 设备可以放置在由第一性能阈值确定的TSV的第一KOZ之外，使得由设备的TSV引起的应力冲击小于第一性能阈值，而第一KOZ仅包含应力冲击的那些点 由TSV引起的大于或等于第一个性能阈值。 用于TSV的第二KOZ可以类似地由第二性能阈值形成。 多个TSV可以沿着TSV的KOZ具有最小半径的方向被放置到TSV的中心，其可以是晶体取向[010]或[100]。 可以在多个TSV的整个KOZ的边界处形成多个TSV应力塞。