Warpage control in a package-on-package structure
    3.
    发明授权
    Warpage control in a package-on-package structure 有权
    包装封装结构中的翘曲控制

    公开(公告)号:US08846448B2

    公开(公告)日:2014-09-30

    申请号:US13571665

    申请日:2012-08-10

    IPC分类号: H01L21/00 H01L21/67

    摘要: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

    摘要翻译: 本公开涉及一种减少封装封装半导体结构内的翘曲的工具布置和方法,同时最小化耦合封装的电绝缘粘合剂内的空隙形成。 压力发生器和可变频率微波源耦合到封装封装的封装半导体结构的处理室。 封装的封装半导体结构由可变频率,可变温度和可变持续时间的可变频率微波源同时加热,并通过压力发生器暴露于高压。 这种用于微波加热和升高压力的组合限制了引入的翘曲量,同时防止在封装封装半导体结构的衬底的电绝缘粘合剂中形成空隙。

    WARPAGE CONTROL IN A PACKAGE-ON-PACKAGE STRUCTURE
    4.
    发明申请
    WARPAGE CONTROL IN A PACKAGE-ON-PACKAGE STRUCTURE 有权
    包装式包装结构中的保温控制

    公开(公告)号:US20140045300A1

    公开(公告)日:2014-02-13

    申请号:US13571665

    申请日:2012-08-10

    IPC分类号: H01L21/50 H05B3/00

    摘要: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

    摘要翻译: 本公开涉及一种减少封装封装半导体结构内的翘曲的工具布置和方法,同时最小化耦合封装的电绝缘粘合剂内的空隙形成。 压力发生器和可变频率微波源耦合到封装封装的封装半导体结构的处理室。 封装的封装半导体结构由可变频率,可变温度和可变持续时间的可变频率微波源同时加热,并通过压力发生器暴露于高压。 这种用于微波加热和升高压力的组合限制了引入的翘曲量,同时防止在封装封装半导体结构的衬底的电绝缘粘合剂中形成空隙。