Semiconductor image sensor and method for fabricating the same
    8.
    发明授权
    Semiconductor image sensor and method for fabricating the same 有权
    半导体图像传感器及其制造方法

    公开(公告)号:US07745834B2

    公开(公告)日:2010-06-29

    申请号:US11471659

    申请日:2006-06-21

    IPC分类号: H01L27/148

    摘要: A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

    摘要翻译: 半导体图像传感器包括:半导体成像元件,包括成像区域,外围电路区域和电极区域; 设置在电极端子上以与外部装置电连接的圆柱形电极; 以及设置在半导体摄像元件的上表面上的透明树脂层。 每个圆柱形电极的上表面和透明树脂层的上表面基本上具有相同的高度。