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公开(公告)号：US5434426A
公开(公告)日：1995-07-18
申请号：US118811
申请日：1993-09-10
申请人： Hideto Furuyama , Hiroshi Hamasaki , Mitsuhiro Kushibe , Katsuji Kaminishi , Tamon Kobayashi , Keiji Takaoka
发明人： Hideto Furuyama , Hiroshi Hamasaki , Mitsuhiro Kushibe , Katsuji Kaminishi , Tamon Kobayashi , Keiji Takaoka
CPC分类号： H01S5/5072 , G02B6/43 , H01S5/005 , H01S5/0264 , H01S5/0267 , H01S5/1032 , H01S5/1071 , H01S5/18308 , H01S5/18344 , H01S5/18358 , H01S5/2027
摘要： Disclosed herein is an optical interconnection device having a light source, a plurality of optical interconnecting elements, and a light-receiving element. The optical interconnecting elements are located on an output side of the light source. Each of the elements has first and second major surfaces and comprises an integral unit made of an optical semiconductor element and a grating lens having concentric annular grooves and concentric annular projections, and two electrodes formed on the first and second major surfaces, respectively. The optical semiconductor element and grating lens of each optical interconnecting element are formed on the first major surface, for emitting or receiving light. The light-receiving element is located on an output side of the optical interconnecting elements. The optical interconnecting elements are arranged at substantially regular intervals, each positioned such that the semiconductor element and the grating lens face to the same direction. The grating lens of each of the optical interconnecting elements has optical characteristic which compensates for light-transmitting characteristic corresponding to the interval between the optical connecting element and the next optical interconnecting element.
摘要翻译： 这里公开了具有光源，多个光学互连元件和光接收元件的光学互连装置。 光学互连元件位于光源的输出侧。 每个元件具有第一和第二主表面，并且包括由光学半导体元件制成的整体单元和具有同心环形槽和同心环形突起的光栅透镜，以及分别形成在第一和第二主表面上的两个电极。 每个光学互连元件的光学半导体元件和光栅透镜形成在第一主表面上，用于发射或接收光。 光接收元件位于光互连元件的输出侧。 光学互连元件以基本上规则的间隔布置，每个位置使得半导体元件和光栅透镜面向相同的方向。 每个光学互连元件的光栅透镜具有光学特性，其补偿对应于光学连接元件和下一个光学互连元件之间的间隔的透光特性。
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公开(公告)号：US06768137B2
公开(公告)日：2004-07-27
申请号：US10400633
申请日：2003-03-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L3300
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.
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公开(公告)号：US5822349A
公开(公告)日：1998-10-13
申请号：US614210
申请日：1996-03-12
CPC分类号： H01S5/227 , H01S5/0265 , H01S5/2224 , H01S5/2226 , H01S5/2227 , H01S5/2275 , H01S5/305 , H01S5/32391
摘要： This invention is a semiconductor device including a p-type InP substrate having a mesa stripe in which at least an active layer and an n-type cladding layer are formed, and a semiconductor layer so formed as to bury the side surfaces of the mesa stripe and having at least an n-type current blocking layer and a p-type current blocking layer, wherein the n-type current blocking layer contains approximately 8.times.10.sup.17 cm.sup.-3 or more of Se as an impurity and the n-type current blocking layer and the n-type cladding layer are not contacting each other.
摘要翻译： 本发明是一种半导体器件，包括具有至少形成有源层和n型覆层的台面条状的p型InP衬底以及形成为埋设台面条的侧面的半导体层 并且具有至少n型电流阻挡层和p型电流阻挡层，其中n型电流阻挡层含有大约8×10 17 cm -3以上的Se作为杂质，n型电流阻挡层和 n型覆层不接触。
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公开(公告)号：US07276735B2
公开(公告)日：2007-10-02
申请号：US10884141
申请日：2004-07-02
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Rei Hashimoto , Keiji Takaoka
IPC分类号： H01L29/201
摘要： A low-cost high-property optical semiconductor element for a long wavelength is provided, using a GaAs substrate. The optical semiconductor element comprises a substrate of GaAs having a first surface and a second surface opposite to each other, a buffer layer of InjGa1-jAs1-kNk (0≦j≦1, 0.002≦k≦0.05) formed on the first surface of the substrate, a first conductive type clad layer formed on the buffer layer, an active layer formed on the first conductive type clad layer and comprising a well layer of InzGa1-zAs (0≦z≦1), the well layer having a smaller bandgap than the first conductive type clad layer, the active layer having a thickness of more than its critical thickness for the substrate based upon equilibrium theories, and a second conductive type clad layer formed on the active layer and having a larger bandgap than the well layer.
摘要翻译： 使用GaAs衬底提供了用于长波长的低成本高性能光学半导体元件。 该光学半导体元件包括具有彼此相对的第一表面和第二表面的GaAs衬底，具有第一表面和第二表面的第二表面， 形成在基板的第一表面上的1-k N N（0 <= j <= 1，0.002 <= k <= 0.05），形成在基板的第一表面上的第一导电型覆盖层 所述缓冲层，形成在所述第一导电型覆盖层上的有源层，并且包括阱层，所述阱层具有In（z） ），所述阱层具有比所述第一导电型覆盖层更小的带隙，所述有源层的厚度大于其基于平衡理论的基板的临界厚度，以及形成在所述有源层上的第二导电型覆盖层和 具有比阱层更大的带隙。
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公开(公告)号：US20060187997A1
公开(公告)日：2006-08-24
申请号：US11332043
申请日：2006-01-13
IPC分类号： H01S3/08
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18338 , H01S5/3202 , H01S2301/176
摘要： It is made possible to obtain high performance having high controllability in polarization mode even when a vertical cavity surface emitting laser diode is fabricated on an ordinary substrate with a plane orientation (100) plane or the like. A vertical cavity surface emitting laser diode includes: a substrate; a semiconductor active layer which is formed on the substrate and has a light emitting region; a first reflecting mirror and a second reflecting mirror sandwiching the semiconductor active layer; a first recess which has a first groove depth penetrating at least the semiconductor active layer from the outermost layer of the first reflecting mirror; a second recess having a second groove depth shallower than the first groove depth; a mesa portion which is surrounded by the first and second recesses; and an insulating film which is buried in the first recess.
摘要翻译： 即使在具有平面取向（100）面等的普通基板上制造垂直空腔表面发射激光二极管，也可以获得在极化模式下具有高可控性的高性能。 垂直腔表面发射激光二极管包括：衬底; 半导体有源层，其形成在所述基板上并具有发光区域; 夹着半导体活性层的第一反射镜和第二反射镜; 第一凹部，其具有从第一反射镜的最外层至少穿透半导体活性层的第一凹槽深度; 第二凹槽，具有比第一凹槽深度浅的第二凹槽深度; 由第一和第二凹部包围的台面部分; 以及埋设在第一凹部中的绝缘膜。
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6.发明授权Semiconductor light emitting apparatus having stacked reflective dielectric films 有权具有层叠反射介电膜的半导体发光装置公开(公告)号：US08338844B2
公开(公告)日：2012-12-25
申请号：US12549048
申请日：2009-08-27
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/44 , H01L33/486 , H01L33/58 , H01L33/62 , H01L2224/05001 , H01L2224/05124 , H01L2224/05139 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/16145 , H01L2224/32013 , H01L2224/48091 , H01L2224/73265 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2924/00014 , H01L2924/013
摘要： A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
摘要翻译： 一种制造半导体发光装置的方法包括使半导体发光器件和安装构件彼此面对。 半导体发光器件包括层叠结构单元，其包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，设置在堆叠结构的主表面上的第一电极 连接到第一半导体层的单元，设置在层叠结构单元的主表面上以连接到第二半导体层的第二电极，以及设置在主表面的第一半导体层和第二半导体层上的电介质堆叠膜 不被第一电极和第二电极覆盖，由具有不同折射率的堆叠电介质膜形成，并且包括竖立在第一和第二电极中的至少一个的边缘的至少一部分上的突出部分。 安装构件包括连接到第一和第二电极中的至少一个的连接构件。 该方法还包括使用突出部分作为引导件使连接构件接触并连接到第一和第二电极中的至少一个。
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公开(公告)号：US20110049541A1
公开(公告)日：2011-03-03
申请号：US12719464
申请日：2010-03-08
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
CPC分类号： H01L33/405 , H01L33/0079
摘要： A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
摘要翻译： 一种半导体发光器件，包括：堆叠结构单元，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极，所述第一金属层包括银或银合金，并且设置在与所述发光层相对的所述第二半导体层的一侧，所述第二金属层包括选自金的至少一种元素 ，铂，钯，铑，铱，钌和锇，并且设置在与第二半导体层相对的第一金属层的一侧。 包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。
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公开(公告)号：US20100059734A1
公开(公告)日：2010-03-11
申请号：US12505053
申请日：2009-07-17
申请人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
发明人： Kei KANEKO , Yasuo OHBA , Hiroshi KATSUNO , Mitsuhiro Kushibe
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/06 , H01L33/325
摘要： A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The second portion is provided between the first portion and the second layer and is made of AlxGa1−x−yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than a Si concentration in the first portion and lower than a Si concentration in the far barrier layer.
摘要翻译： 半导体发光器件包括由n型GaN和n型AlGaN中的至少一种构成的第一层; 由含Mg的p型AlGaN制成的第二层; 以及设置在第一层和第二层之间的发光部。 发光部包括由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）构成的多个阻挡层，以及设置在每对多个阻挡层 并由GaInN或AlGaInN制成。 多个阻挡层具有最近的阻挡层和远的阻挡层。 最近的阻挡层最接近多个阻挡层中的第二层。 最近的阻挡层包括第一部分和第二部分。 第一部分由含Si的Al x Ga 1-x-y In y N（0＆nl; x，0＆nl; y，x + y＆nlE; 1）制成。 第二部分设置在第一部分和第二层之间，并由Al x Ga 1-x-y In y N（0＆lt; n 1; x，0＆n 1; y，x + y和n 1; 1）制成。 第二部分中的Si浓度低于第一部分中的Si浓度，并且低于远阻隔层中的Si浓度。
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公开(公告)号：US20100051987A1
公开(公告)日：2010-03-04
申请号：US12400396
申请日：2009-03-09
申请人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
发明人： Hiroshi Katsuno , Yasuo Ohba , Kei Kaneko , Mitsuhiro Kushibe
CPC分类号： H01L33/44 , H01L33/0025 , H01L33/06 , H01L33/24 , H01L33/38 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/013 , H01L2924/01013
摘要： A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
摘要翻译： 半导体发光器件包括：层叠结构，第一电极，第二电极和电介质层压膜。 层叠结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，其中第二半导体层和发光层被选择性地去除，并且 第一半导体层的一部分暴露于第二半导体层侧的第一主表面。 第一电极设置在层压结构的第一主表面上并连接到第一半导体层，并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层 金属膜，其设置在第一半导体层上，并且对于从第一金属膜发射的发光层的光具有较高的反射率，并且相比于第一金属膜具有比第一半导体层更高的接触电阻。 第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。 电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上，并且具有层叠具有不同折射率的多个电介质膜。
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10.发明授权
公开(公告)号：US5253262A
公开(公告)日：1993-10-12
申请号：US784711
申请日：1991-10-30
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40 , H01S3/19
CPC分类号： H01S5/18327 , B82Y20/00 , H01S5/18388 , H01S5/227 , H01S2301/18 , H01S5/1042 , H01S5/1071 , H01S5/1078 , H01S5/1082 , H01S5/1228 , H01S5/18305 , H01S5/18308 , H01S5/18319 , H01S5/1835 , H01S5/18352 , H01S5/2004 , H01S5/2027 , H01S5/2205 , H01S5/2275 , H01S5/32308 , H01S5/34313 , H01S5/4056
摘要： A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
摘要翻译： 其中公开的微腔半导体激光器包括双异质结构部分，其包括夹在第一或下包层之间的中间有源层和半导体衬底之上的第二或上覆层。 第一多层反射器部分布置在基板和双异质结构部分之间，使其反射率在激光器的振荡波长附近变得最大。 上覆层是半球形的。 三维光反射器覆盖双异质结构部分，用于控制沿着各个方向的双异质结构部分中获得的自发辐射，并且用于增加具有特定激光模式的自发发射的耦合比，从而降低阈值电流。
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