摘要:
A solar cell module including two or more adjacent solar cells (1a, 1b), a connection member (2) for electrically connecting the solar cells (1a, 1b) to each other, and a solder layer (5) disposed between the solar cells (1) and the connection member (2), wherein first and second opening holes (4a, 4b) are formed at a connection portion of the connection member (2) corresponding to the first and the second solar cells (1a, 1b), the first and the second opening holes (4a, 4b) are configured that solder is deposited into them, and first and second protruding parts (3a, 3b) are formed at a part of the outer periphery of each of the first and second opening holes (4a, 4b) of the connection member(2). By the present invention, it is possible to ensure sufficient thickness of the solder joining layer and to improve reliability for long-term use.
摘要:
A solar cell module including two or more adjacent solar cells (1a, 1b), a connection member (2) for electrically connecting the solar cells (1a, 1b) to each other, and a solder layer (5) disposed between the solar cells (1) and the connection member (2), wherein first and second opening holes (4a, 4b) are formed at a connection portion of the connection member (2) corresponding to the first and the second solar cells (1a, 1b), the first and the second opening holes (4a, 4b) are configured that solder is deposited into them, and first and second protruding parts (3a, 3b) are formed at a part of the outer periphery of each of the first and second opening holes (4a, 4b) of the connection member (2). By the present invention, it is possible to ensure sufficient thickness of the solder joining layer and to improve reliability for long-term use.
摘要:
Included are: a silicon substrate; a pair of finger electrodes connected to a P-type diffusion layer and an N-type diffusion layer respectively, which are formed in a first surface of the silicon substrate; an inner-part passivation layer that gives insulation between the pair of finger electrodes; a connecting area for connection with an outer part, in a gathering part where finger parts of one of the pair of finger electrodes gather; and a barrier part that is, within that connecting area, formed along tip ends of the finger parts of the other of the pair of finger electrodes, a polarity of the other being different from that of the one of the pair of finger electrodes of the connecting area.
摘要:
The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要:
A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要:
A bonded structure 106 includes a semiconductor element 102 bonded to a Cu electrode 103 with a bonding material 104 predominantly composed of Bi, wherein the semiconductor element 102 and the Cu electrode 103 are bonded to each other via a laminated body 209a that progressively increases a Young's modulus from the bonding material 104 to a bonded material (the semiconductor element 102 and the Cu electrode 103), achieving stress relaxation against a thermal stress generated in a temperature cycle during the use of a power semiconductor module.
摘要:
A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要:
A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要:
A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要:
A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.