摘要:
A fine metal structure having its surface furnished with microprojections of high strength, high precision and large aspect ratio; and a process for producing the fine metal structure free of defects. There is provided a fine metal structure having its surface furnished with microprojections, characterized in that the microprojections have a minimum thickness or minimum diameter ranging from 10 nanometers to 10 micrometers and that the ratio between minimum thickness or minimum diameter (D) of microprojections and height of microprojections (H), H/D, is greater than 1. There is further provided a process for producing a fine metal structure, characterized by comprising providing a substrate having a fine rugged pattern on its surface, applying a molecular electroless plating catalyst to the surface, thereafter carrying out electroless plating to thereby form a metal layer having the rugged pattern filled, and detaching the metal layer from the substrate to thereby obtain a fine metal structure furnished with a surface having undergone reversal transfer of the above rugged pattern.
摘要:
A fine metal structure having its surface furnished with microprojections of high strength, high precision and large aspect ratio; and a process for producing the fine metal structure free of defects. There is provided a fine metal structure having its surface furnished with microprojections, characterized in that the microprojections have a minimum thickness or minimum diameter ranging from 10 nanometers to 10 micrometers and that the ratio between minimum thickness or minimum diameter (D) of microprojections and height of microprojections (H), H/D, is greater than 1. There is further provided a process for producing a fine metal structure, characterized by comprising providing a substrate having a fine rugged pattern on its surface, applying a molecular electroless plating catalyst to the surface, thereafter carrying out electroless plating to thereby form a metal layer having the rugged pattern filled, and detaching the metal layer from the substrate to thereby obtain a fine metal structure furnished with a surface having undergone reversal transfer of the above rugged pattern.
摘要:
The fine pattern mold that includes a roll, a buffer tube with inner peripheral surface is in contact with an outer peripheral surface of the roll, and a stamper tube in which its inner peripheral surface is in contact with an outer peripheral surface of the buffer tube and a fine concave/convex pattern is formed on its outer peripheral surface, wherein the buffer tube has a larger coefficient of linear expansion and a smaller elastic modulus than those of the stamper tube.
摘要:
The fine pattern mold that includes a roll, a buffer tube with inner peripheral surface is in contact with an outer peripheral surface of the roll, and a stamper tube in which its inner peripheral surface is in contact with an outer peripheral surface of the buffer tube and a fine concave/convex pattern is formed on its outer peripheral surface, wherein the buffer tube has a larger coefficient of linear expansion and a smaller elastic modulus than those of the stamper tube.
摘要:
The fine pattern mold comprises: that includes a roll, a buffer tube with inner peripheral surface is in contact with an outer peripheral surface of the roll, and a stamper tube in which its inner peripheral surface is in contact with an outer peripheral surface of the buffer tube and a fine concave/convex pattern is formed on its outer peripheral surface, wherein the buffer tube has a larger coefficient of linear expansion and a smaller elastic modulus than those of the stamper tube.
摘要:
There is provided a fine pattern mold capable of transferring a fine concave/convex pattern accurately without causing deformation of the fine concave/convex pattern itself.The fine patter mold comprises: a roll; a buffer tube whose inner peripheral surface is in contact with an outer peripheral surface of the roll; and a stamper tube in which its inner peripheral surface is in contact with an outer peripheral surface of the buffer tube and a fine concave/convex pattern is formed on its outer peripheral surface, wherein the buffer tube has a larger coefficient of linear expansion and a smaller elastic modulus than those of the stamper tube.
摘要:
In a multi chip module of a structure wherein a plurality of bare or packaged semiconductor chips are mounted on a single wiring board and upper surfaces of the semiconductor chips are covered with a single heat spread plate, the whole space around the semiconductor chips thus sandwiched between the wiring board and the heat spread plate is filled with resin.By so doing, the semiconductor chips are interconnected through the resin, so that even if a stress is exerted on any of the chips, it is dispersed and therefore it is possible to diminish the occurrence of cracks in the chips and the heat spread plate caused by stress concentration. Besides, since the semiconductor chips and the heat spread plate are bonded together with resin, even if there are variations in size of the chips, both can be bonded easily. Further, the bonding of all the chips and the heat spread plate can be done in a single process.
摘要:
A semiconductor device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the in semiconductor element, bump electrodes for external connection electrically connected to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions.
摘要:
In a multi-chip module, a plurality of semiconductor chips are mounted on a single wiring board. Upper surfaces of the semiconductor chips are covered with a single heat spread plate, and the whole space around the semiconductor chips, sandwiched between the wiring board and the heat spread plate, is filled with resin. The semiconductor chips are interconnected through the resin so that any stress exerted on any chips is dispersed. This diminishes the occurrence of cracks caused by stress concentration. Since the semiconductor chips and the heat spread plate are bonded together with resin, even if there are variations in size of the chips, both can be bonded easily. Further, the bonding of all the chips and the heat spread plate can be done in a single process.
摘要:
A semiconductor device has a multi-layered wiring structure having a conductor layer to be electrically connected to a packaging substrate, the structure being provided on a circuit formation surface of a semiconductor chip; and ball-like terminals disposed in a grid array on the surface of the multi-layered wiring structure on the packaging substrate side, wherein the multi-layered wiring structure includes a buffer layer for relieving a thermal stress produced between the semiconductor chip and the packaging substrate, after packaging thereof, and multiple wiring layers. In this semiconductor device, the wiring distance is shorter than that of a conventional semiconductor device, so that an inductance component becomes smaller, to thereby increase the signal speed; the distance between a ground layer and a power supply layer is shortened, to reduce noise produced upon operation, and also a thermal stress upon packaging is relieved by the buffer layer of the multi-layered wiring structure, resulting in the improved connection reliability; and the number of terminals per unit is increased because of elimination of wire bonding.