公开(公告)号：US07550318B2

公开(公告)日：2009-06-23

申请号：US11502679

申请日：2006-08-11

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5389 ,  H01L23/49517 ,  H01L24/24 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/05553 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/82007 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method is provided for forming peripheral contacts between a die and a substrate. In accordance with the method, a die (305) is provided which has first and second opposing major surfaces, wherein the first major surface is attached to a substrate (303) having a first group (323) of contact pads disposed thereon, and wherein the second major surface has a second group (311) of contact pads disposed thereon. An electrically conductive pathway (326) is formed between the first and second groups of contacts with an electrically conductive polymeric composition.

摘要翻译： 提供一种用于在管芯和衬底之间形成周边接触的方法。 根据该方法，提供具有第一和第二相对主表面的模具（305），其中第一主表面附接到具有设置在其上的第一组（323）接触垫的基板（303），并且其中 第二主表面具有设置在其上的第二接触焊盘组（311）。 在第一和第二组触点之间用导电聚合物组合物形成导电通路（326）。

公开(公告)号：US08129226B2

公开(公告)日：2012-03-06

申请号：US12599625

申请日：2007-05-10

申请人： James P. Johnston ,  Chu-Chung Lee ,  Tu-Anh N. Tran ,  James W. Miller ,  Kevin J. Hess

发明人： James P. Johnston ,  Chu-Chung Lee ,  Tu-Anh N. Tran ,  James W. Miller ,  Kevin J. Hess

IPC分类号： H01L21/44

CPC分类号： H01L23/49816 ,  H01L23/3128 ,  H01L23/4951 ,  H01L23/49833 ,  H01L23/50 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48471 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/4945 ,  H01L2224/85191 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A packaging assembly (30), such as a ball grid array package, is formed which distributes power across an interior region of an integrated circuit die (52) by using an encapsulated patterned leadframe conductor (59) that is disposed over the die (52) and bonded to a plurality of bonding pads (45) formed in a BGA carrier substrate (42) and in the interior die region, thereby electrically coupling the interior die region to an externally provided reference voltage.

摘要翻译： 形成诸如球栅阵列封装的封装组件（30），其通过使用设置在模具（52）上的封装的图案化引线框导体（59）来分布跨集成电路管芯（52）的内部区域的电力 ）并且接合到形成在BGA载体衬底（42）中的多个接合焊盘（45）和内部管芯区域中，从而将内部管芯区域电连接到外部提供的参考电压。

公开(公告)号：US07829997B2

公开(公告)日：2010-11-09

申请号：US11732594

申请日：2007-04-04

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

IPC分类号： H01L23/52

CPC分类号： H01L23/50 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device (601) is provided which comprises a substrate (603); a semiconductor device (605) disposed on said substrate and having a first major surface; a first metal strap (615) which is in electrical contact with said substrate and which is adapted to provide power to a first region (608) of said semiconductor device; and a second metal strap (616) which is in electrical contact with said substrate and which is adapted to provide ground to a second region (609) of said semiconductor device.

摘要翻译： 提供了一种半导体器件（601），其包括衬底（603）; 设置在所述基板上并具有第一主表面的半导体器件（605） 第一金属带（615），其与所述基板电接触并且适于向所述半导体器件的第一区域（608）供电; 以及第二金属带（616），其与所述衬底电接触并适于提供到所述半导体器件的第二区域（609）的接地。

公开(公告)号：US20100270663A1

公开(公告)日：2010-10-28

申请号：US12599625

申请日：2007-05-10

申请人： James P. Johnston ,  Chu-Chung Lee ,  Tu-Anh N. Tran ,  James W. Miller ,  Kevin J. Hess

发明人： James P. Johnston ,  Chu-Chung Lee ,  Tu-Anh N. Tran ,  James W. Miller ,  Kevin J. Hess

IPC分类号： H01L23/538 ,  H01L21/98 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L23/3128 ,  H01L23/4951 ,  H01L23/49833 ,  H01L23/50 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/24226 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48471 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/4945 ,  H01L2224/85191 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A packaging assembly (30), such as a ball grid array package, is formed which distributes power across an interior region of an integrated circuit die (52) by using an encapsulated patterned leadframe conductor (59) that is disposed over the die (52) and bonded to a plurality of bonding pads (45) formed in a BGA carrier substrate (42) and in the interior die region, thereby electrically coupling the interior die region to an externally provided reference voltage.

摘要翻译： 形成诸如球栅阵列封装的封装组件（30），其通过使用设置在模具（52）上的封装的图案化引线框导体（59）来分布跨集成电路管芯（52）的内部区域的电力 ）并且接合到形成在BGA载体衬底（42）中的多个接合焊盘（45）和内部管芯区域中，从而将内部管芯区域电连接到外部提供的参考电压。

公开(公告)号：US20080038912A1

公开(公告)日：2008-02-14

申请号：US11502679

申请日：2006-08-11

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

IPC分类号： H01L21/44

CPC分类号： H01L23/5389 ,  H01L23/49517 ,  H01L24/24 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/05553 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48465 ,  H01L2224/49109 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/82007 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method is provided for forming peripheral contacts between a die and a substrate. In accordance with the method, a die (305) is provided which has first and second opposing major surfaces, wherein the first major surface is attached to a substrate (303) having a first group (323) of contact pads disposed thereon, and wherein the second major surface has a second group (311) of contact pads disposed thereon. An electrically conductive pathway (326) is formed between the first and second groups of contacts with an electrically conductive polymeric composition.

摘要翻译： 提供一种用于在管芯和衬底之间形成周边接触的方法。 根据该方法，提供具有第一和第二相对主表面的模具（305），其中第一主表面附接到具有设置在其上的第一组（323）接触垫的基板（303），并且其中 第二主表面具有设置在其上的第二接触焊盘组（311）。 在第一和第二组触点之间用导电聚合物组合物形成导电通路（326）。

公开(公告)号：US20080246165A1

公开(公告)日：2008-10-09

申请号：US11732594

申请日：2007-04-04

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  James W. Miller

IPC分类号： H01L23/50

CPC分类号： H01L23/50 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/4917 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device (601) is provided which comprises a substrate (603); a semiconductor device (605) disposed on said substrate and having a first major surface; a first metal strap (615) which is in electrical contact with said substrate and which is adapted to provide power to a first region (608) of said semiconductor device; and a second metal strap (616) which is in electrical contact with said substrate and which is adapted to provide ground to a second region (609) of said semiconductor device.

摘要翻译： 提供了一种半导体器件（601），其包括衬底（603）; 设置在所述基板上并具有第一主表面的半导体器件（605） 第一金属带（615），其与所述基板电接触并且适于向所述半导体器件的第一区域（608）供电; 以及第二金属带（616），其与所述衬底电接触并适于提供到所述半导体器件的第二区域（609）的接地。

公开(公告)号：US07632715B2

公开(公告)日：2009-12-15

申请号：US11620074

申请日：2007-01-05

申请人： Kevin J. Hess ,  Chu-Chung Lee ,  Robert J. Wenzel

发明人： Kevin J. Hess ,  Chu-Chung Lee ,  Robert J. Wenzel

IPC分类号： H01L21/00

CPC分类号： H01L23/295 ,  H01L21/561 ,  H01L21/568 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/15311

摘要： A method of packaging a semiconductor includes providing a support structure. An adhesive layer is formed overlying the support structure and is in contact with the support structure. A plurality of semiconductor die is placed on the adhesive layer. The semiconductor die are laterally separated from each other and have electrical contacts that are in contact with the adhesive layer. A layer of encapsulating material is formed overlying and between the plurality of semiconductor die and has a distribution of filler material. A concentration of the filler material is increased in all areas laterally adjacent each of the plurality of semiconductor die.

摘要翻译： 包装半导体的方法包括提供支撑结构。 粘合层形成在支撑结构上方并与支撑结构接触。 多个半导体管芯被放置在粘合剂层上。 半导体管芯相互横向分离并具有与粘合剂层接触的电接触。 一层封装材料形成在多个半导体管芯之间并且在多个半导体管芯之间并且具有填充材料的分布。 填充材料的浓度在与多个半导体管芯中的每一个横向相邻的所有区域中增加。

公开(公告)号：US06933614B2

公开(公告)日：2005-08-23

申请号：US10662541

申请日：2003-09-15

申请人： Chu-Chung Lee ,  Fuaida Harun ,  Kevin J. Hess ,  Lan Chu Tan ,  Cheng Choi Yong

发明人： Chu-Chung Lee ,  Fuaida Harun ,  Kevin J. Hess ,  Lan Chu Tan ,  Cheng Choi Yong

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/85013 ,  H01L2224/85207 ,  H01L2224/85375 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2224/78 ,  H01L2924/00

摘要： An integrated circuit die (10) has a copper contact (16, 18), which, upon exposure to the ambient air, forms a native copper oxide. An organic material is applied to the copper contact which reacts with the native copper oxide to form an organic coating (12, 14) on the copper contact in order to prevent further copper oxidation. In this manner, further processing at higher temperatures, such as those greater than 100 degrees Celsius, is not inhibited by excessive copper oxidation. For example, due to the organic coating, the high temperature of the wire bond process does not result in excessive oxidation which would prevent reliable wire bonding. Thus, the formation of the organic coating allows for a reliable and thermal resistance wire bond (32, 34). Alternatively, the organic coating can be formed over exposed copper at any time during the formation of the integrated circuit die to prevent or limit the formation of copper oxidation.

摘要翻译： 集成电路管芯（10）具有铜接触（16,18），其在暴露于环境空气时形成天然铜氧化物。 将有机材料施加到与天然氧化铜反应的铜接触处，以在铜接触上形成有机涂层（12,14），以防止进一步的铜氧化。 以这种方式，在较高温度（例如大于100摄氏度的温度）下的进一步处理不会被过度的铜氧化所阻碍。 例如，由于有机涂层，引线键合过程的高温不会导致过度的氧化，这将阻止可靠的引线接合。 因此，有机涂层的形成允许可靠和耐热的引线键合（32,34）。 或者，可以在形成集成电路管芯期间的任何时间在暴露的铜上形成有机涂层，以防止或限制铜氧化的形成。

公开(公告)号：US20120153464A1

公开(公告)日：2012-06-21

申请号：US13355748

申请日：2012-01-23

申请人： Kevin J. Hess ,  Chu-Chung Lee

发明人： Kevin J. Hess ,  Chu-Chung Lee

IPC分类号： H01L23/485 ,  H01B5/00

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013

摘要： Methods of forming gold-aluminum electrical interconnects are described. The method may include interposing a diffusion retardant layer between the gold and the aluminum, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum; forming alloys of gold and the diffusion retardant material in regions containing the material and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material; and forming a continuous electrically conducting path between the aluminum and the gold. A structure for gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad and a diffusion retardant layer in contact with the bond pad, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material. The structure may include a gold free air ball in contact with the diffusion retardant layer.

摘要翻译： 描述形成金 - 铝电互连的方法。 该方法可以包括在金和铝之间插入扩散阻挡层，扩散阻挡层包含含有基本上没有扩散阻挡材料的区域; 与扩散阻挡层，金和铝接触; 在含有材料的区域中形成金和扩散阻挡材料的合金，并在基本上不含该材料的区域中形成金 - 铝金属间化合物; 并在铝和金之间形成连续的导电路径。 提供了金 - 铝互连结构。 该结构可以包括铝合金接合焊盘和与接合焊盘接触的扩散阻挡层，扩散阻挡层包括含有基本上没有扩散阻挡材料的区域。 该结构可以包括与扩散阻挡层接触的无金空气球。

公开(公告)号：US08105933B2

公开(公告)日：2012-01-31

申请号：US11669556

申请日：2007-01-31

申请人： Kevin J. Hess ,  Chu-Chung Lee

发明人： Kevin J. Hess ,  Chu-Chung Lee

IPC分类号： H01L21/44

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013

摘要： In some embodiments a method of forming a gold-aluminum electrical interconnect is described. The method may include interposing a diffusion retardant layer between the gold and the aluminum (1002), the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum (1004); forming alloys of gold and the diffusion retardant material in regions containing the material (1006) and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material (1008); and forming a continuous electrically conducting path between the aluminum and the gold (1010). In some embodiments, a structure useful in a gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad (530) and a diffusion retardant layer (520) in contact with the bond pad, the diffusion retardant layer including regions (522) containing and regions (524) substantially devoid of a diffusion retardant material. The structure may include a gold free air ball (714) in contact with the diffusion retardant layer.

摘要翻译： 在一些实施例中描述了形成金 - 铝电互连的方法。 该方法可以包括在金和铝之间插入扩散阻挡层（1002），扩散阻挡层包含含有基本上没有扩散阻挡材料的区域; 与扩散阻挡层，金和铝接触（1004）; 在含有材料（1006）的区域中形成金和扩散阻挡材料的合金并在基本上不含材料（1008）的区域中形成金 - 铝金属间化合物; 以及在所述铝和所述金（1010）之间形成连续的导电路径。 在一些实施例中，提供了可用于金 - 铝互连的结构。 该结构可以包括与接合焊盘接触的铝合金接合焊盘（530）和扩散阻挡层（520），所述扩散阻挡层包括含有基本上没有扩散阻挡材料的区域（522）和区域（524）。 该结构可以包括与扩散阻挡层接触的无金空气球（714）。