公开(公告)号：US08736053B2

公开(公告)日：2014-05-27

申请号：US13526821

申请日：2012-06-19

申请人： Koichi Tanaka ,  Nobuyuki Kurashima ,  Hajime Iizuka ,  Tetsuya Koyama

发明人： Koichi Tanaka ,  Nobuyuki Kurashima ,  Hajime Iizuka ,  Tetsuya Koyama

IPC分类号： H01L23/48

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/568 ,  H01L23/3135 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3511

摘要： A circuit substrate having a mounting surface on which a semiconductor chip is mounted and at least one connection pad formed on the mounting surface is connected to a support plate having at least one mounting portion with a diameter larger than a diameter of the connection pad, through a truncated-cone-shaped solder layer which is formed from at least one solder ball on the basis of a difference between the diameter of the mounting portion and the diameter of the connection pad.

摘要翻译： 具有安装有半导体芯片的安装面的电路基板和形成在安装面上的至少一个连接焊盘连接到具有至少一个直径大于连接焊盘直径的安装部分的支撑板上，通过 基于安装部分的直径和连接焊盘的直径之间的差异，由至少一个焊球形成的截锥形焊料层。

公开(公告)号：US07989707B2

公开(公告)日：2011-08-02

申请号：US11815580

申请日：2006-12-12

申请人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

发明人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

IPC分类号： H05K1/16

CPC分类号： H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/162 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/85 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/185 ,  H05K1/186 ,  H05K3/20 ,  H05K3/4614 ,  H05K3/462 ,  H05K3/4644 ,  H05K2201/10007 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  H01L2924/00

摘要： A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.

摘要翻译： 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中，将半导体芯片封装在第一基板和第二基板之间，并且在第一布线和第二布线之间形成电连接，以形成连接到半导体芯片的多层布线。

公开(公告)号：US08793868B2

公开(公告)日：2014-08-05

申请号：US13167203

申请日：2011-06-23

申请人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

发明人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

IPC分类号： H05K3/30

CPC分类号： H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/162 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/85 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/185 ,  H05K1/186 ,  H05K3/20 ,  H05K3/4614 ,  H05K3/462 ,  H05K3/4644 ,  H05K2201/10007 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  H01L2924/00

摘要： A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.

摘要翻译： 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中，将半导体芯片封装在第一基板和第二基板之间，并且在第一布线和第二布线之间形成电连接，以形成连接到半导体芯片的多层布线。

公开(公告)号：US20090008765A1

公开(公告)日：2009-01-08

申请号：US11815580

申请日：2006-12-12

申请人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

发明人： Takaharu Yamano ,  Hajime Iizuka ,  Hideaki Sakaguchi ,  Toshio Kobayashi ,  Tadashi Arai ,  Tsuyoshi Kobayashi ,  Tetsuya Koyama ,  Kiyoaki Iida ,  Tomoaki Mashima ,  Koichi Tanaka ,  Yuji Kunimoto ,  Takashi Yanagisawa

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L23/5389 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L25/162 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/85 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/185 ,  H05K1/186 ,  H05K3/20 ,  H05K3/4614 ,  H05K3/462 ,  H05K3/4644 ,  H05K2201/10007 ,  H05K2201/10378 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  H01L2924/00

摘要： A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.

摘要翻译： 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中，将半导体芯片封装在第一基板和第二基板之间，并且在第一布线和第二布线之间形成电连接，以形成连接到半导体芯片的多层布线。

公开(公告)号：US20060208356A1

公开(公告)日：2006-09-21

申请号：US11372916

申请日：2006-03-10

申请人： Takaharu Yamano ,  Masahiro Sunohara ,  Hajime Iizuka ,  Tetsuya Koyama

发明人： Takaharu Yamano ,  Masahiro Sunohara ,  Hajime Iizuka ,  Tetsuya Koyama

IPC分类号： H01L23/48

CPC分类号： H01L23/5383 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/18 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/81 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3511 ,  H01L2924/381 ,  H05K1/185 ,  H05K3/4644 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/0401

摘要： A wiring board includes an insulating layer in which a semiconductor chip is embedded, and a wiring structure connected to the semiconductor chip. A reinforcing member reinforcing the insulating layer is embedded in the insulating layer. This enables reduction in a thickness of the wiring board and a suppression of warpage of the wiring board.

摘要翻译： 布线基板包括嵌入有半导体芯片的绝缘层和与半导体芯片连接的布线结构。 加强绝缘层的加强构件嵌入在绝缘层中。 这样可以减少布线板的厚度和抑制布线板的翘曲。

公开(公告)号：US07884484B2

公开(公告)日：2011-02-08

申请号：US11372916

申请日：2006-03-10

申请人： Takaharu Yamano ,  Masahiro Sunohara ,  Hajime Iizuka ,  Tetsuya Koyama

发明人： Takaharu Yamano ,  Masahiro Sunohara ,  Hajime Iizuka ,  Tetsuya Koyama

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5383 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/18 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/81 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3511 ,  H01L2924/381 ,  H05K1/185 ,  H05K3/4644 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/0401

摘要： A wiring board includes an insulating layer in which a semiconductor chip is embedded, and a wiring structure connected to the semiconductor chip. A reinforcing member reinforcing the insulating layer is embedded in the insulating layer. This enables reduction in a thickness of the wiring board and a suppression of warpage of the wiring board.

摘要翻译： 布线基板包括嵌入有半导体芯片的绝缘层和与半导体芯片连接的布线结构。 加强绝缘层的加强构件嵌入在绝缘层中。 这样可以减少布线板的厚度和抑制布线板的翘曲。

公开(公告)号：US20120324957A1

公开(公告)日：2012-12-27

申请号：US13600925

申请日：2012-08-31

申请人： Toru Nishikawa ,  Hironobu Yamamichi ,  Tetsuya Koyama ,  Yuji Endo ,  Hajime Itoh

发明人： Toru Nishikawa ,  Hironobu Yamamichi ,  Tetsuya Koyama ,  Yuji Endo ,  Hajime Itoh

IPC分类号： C03B5/18 ,  C03B5/225

CPC分类号： C03B5/2252 ,  Y02P40/57

摘要： A vacuum degassing apparatus for molten glass is comprised of an uprising pipe, a vacuum degassing vessel, a downfalling pipe, an upstream side pit that supplies molten glass to the uprising pipe, and a downstream side pit that receives molten glass from the downfalling pipe. The vacuum degassing apparatus for molten glass is further comprised of a separating mechanism that separates a part of molten glass moving from the downfalling pipe to the downstream side pit, and a returning pipe that returns separated molten glass to the upstream side pit.

摘要翻译： 用于熔融玻璃的真空脱气装置包括上升管，真空脱气容器，下降管，向上升管供给熔融玻璃的上游侧凹坑以及从下降管接收熔融玻璃的下游侧凹坑。 用于熔融玻璃的真空脱气装置还包括将从下降管移动到下游侧凹坑的熔融玻璃的一部分分离的分离机构和将分离的熔融玻璃返回到上游侧凹坑的返回管。

公开(公告)号：US20110099806A1

公开(公告)日：2011-05-05

申请号：US12929090

申请日：2010-12-30

申请人： Tetsuya Koyama ,  Tsuyoshi Kobayashi ,  Hiroyuki Kato ,  Yoshihiro Machida

发明人： Tetsuya Koyama ,  Tsuyoshi Kobayashi ,  Hiroyuki Kato ,  Yoshihiro Machida

IPC分类号： H05K3/36

CPC分类号： H05K3/4614 ,  H05K3/462 ,  H05K3/4647 ,  H05K2203/061 ,  H05K2203/0733 ,  H05K2203/1327 ,  H05K2203/1476 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49146 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/4916 ,  Y10T29/49165

摘要： First, a unilayer wiring board is fabricated, which has wiring layers formed in desired shapes on both sides of an insulating base member; and a metal bump formed on the wiring layer on one side of the insulating base member. Then, a desired number of unilayer boards are prepared and stacked up. On that case, the board disposed in the uppermost layer is prepared without having a metal bump. The boards are positioned and stacked up in such a manner that a metal bump of one of adjacent boards is connected to a corresponding wiring layer of the other board. Thereafter, resin is filled into gaps between the stacked boards, and insulating layers are formed on both sides of a multilayer board obtained through the above steps, in such a manner as to cover the entire surface except pad areas defined at predetermined positions on the wiring layers.

公开(公告)号：US20100319403A1

公开(公告)日：2010-12-23

申请号：US12853408

申请日：2010-08-10

申请人： Toru NISHIKAWA ,  Hironobu Yamamichi ,  Tetsuya Koyama ,  Yuji Endo ,  Hajime Itoh

发明人： Toru NISHIKAWA ,  Hironobu Yamamichi ,  Tetsuya Koyama ,  Yuji Endo ,  Hajime Itoh

IPC分类号： C03B5/225

CPC分类号： C03B5/2252 ,  Y02P40/57

摘要： The present invention provides a vacuum degassing apparatus and a vacuum degassing method for molten glass, which can suppress generation of bubbles on an interface between molten glass and a wall face of a conduit for molten glass such as a vacuum degassing vessel, an uprising pipe or a downfalling pipe that constitute a vacuum degassing apparatus, or influence of lowering of vacuum degassing effect due to rise of the level of molten glass in the vacuum degassing vessel, and which can stably exhibit the effect of vacuum degassing.A vacuum degassing apparatus for molten glass, comprising an uprising pipe, a vacuum degassing vessel, a downfalling pipe, an upstream side pit for supplying molten glass to the uprising pipe, and a downstream side pit for receiving molten glass from the downfalling pipe, wherein the vacuum degassing apparatus for molten glass further comprises a separating mechanism for separating a part of molten glass moving from the downfalling pipe to the downstream side pit, and a returning pipe for returning molten glass separated by the separating mechanism to the upstream side pit.

摘要翻译： 本发明提供一种用于熔融玻璃的真空脱气装置和真空脱气方法，其可以抑制熔融玻璃与用于熔融玻璃的管道的壁面之间的界面上产生气泡，例如真空脱气容器，起升管或 构成真空脱气装置的下降管，或由于真空脱气容器内的熔融玻璃水平上升引起的真空脱气效果的降低的影响，能够稳定地发挥真空脱气的效果。 一种用于熔融玻璃的真空脱气装置，包括上升管，真空脱气容器，下降管，用于向上升管供应熔融玻璃的上游侧凹坑和用于从下降管接收熔融玻璃的下游侧凹坑，其中 用于熔融玻璃的真空脱气装置还包括分离机构，用于将从下降管移动到下游侧凹坑的熔融玻璃的一部分分离，以及用于将由分离机构分离的熔融玻璃返回到上游侧凹坑的返回管。

公开(公告)号：US20130174658A1

公开(公告)日：2013-07-11

申请号：US13824259

申请日：2011-08-31

申请人： Nariyuki Kataoka ,  Tetsuya Koyama

发明人： Nariyuki Kataoka ,  Tetsuya Koyama

IPC分类号： G01M1/22

CPC分类号： G01M1/22 ,  G01M1/16 ,  G01M1/30

摘要： An imbalance correction method for correcting the imbalance of a rotor measures the vibration state of the rotor before temporary correction and the vibration state of the rotor after the temporary correction in a plurality of rotational speeds in order to make vibration values below the standard. An aggregation range of the tips of correction vectors for obtaining a vibration value which satisfies a vibration standard is calculated from vibration vectors in the rotational speeds. A real correction vector is selected from correction vectors having the tips in a region in which the aggregation ranges calculated for each of the rotational speeds overlap one another among a plurality of the correction vectors. A real correction amount and a real correction phase are set based on the real correction vector. The imbalance of the rotor is corrected based on the real correction amount and the real correction phase.

摘要翻译： 用于校正转子不平衡的不平衡校正方法在暂时校正之后测量转子的振动状态和在多个转速中的临时校正之后的转子的振动状态，以使振动值低于标准。 根据旋转速度的振动矢量计算用于获得满足振动标准的振动值的校正矢量的前端的聚集范围。 从在多个校正矢量中的每个旋转速度计算的聚合范围彼此重叠的区域中具有尖端的校正矢量中选择实际校正矢量。 基于实际校正矢量来设定实际的校正量和实际校正相位。 基于实际校正量和实际校正相位来校正转子的不平衡。