-
公开(公告)号:US08736053B2
公开(公告)日:2014-05-27
申请号:US13526821
申请日:2012-06-19
IPC分类号: H01L23/48
CPC分类号: H01L23/49816 , H01L21/4853 , H01L21/568 , H01L23/3135 , H01L25/105 , H01L2224/16225 , H01L2224/73253 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15331 , H01L2924/3511
摘要: A circuit substrate having a mounting surface on which a semiconductor chip is mounted and at least one connection pad formed on the mounting surface is connected to a support plate having at least one mounting portion with a diameter larger than a diameter of the connection pad, through a truncated-cone-shaped solder layer which is formed from at least one solder ball on the basis of a difference between the diameter of the mounting portion and the diameter of the connection pad.
摘要翻译: 具有安装有半导体芯片的安装面的电路基板和形成在安装面上的至少一个连接焊盘连接到具有至少一个直径大于连接焊盘直径的安装部分的支撑板上,通过 基于安装部分的直径和连接焊盘的直径之间的差异,由至少一个焊球形成的截锥形焊料层。
-
公开(公告)号:US07989707B2
公开(公告)日:2011-08-02
申请号:US11815580
申请日:2006-12-12
申请人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
发明人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
IPC分类号: H05K1/16
CPC分类号: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/56 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49822 , H01L23/49833 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/105 , H01L25/16 , H01L25/162 , H01L2221/68345 , H01L2224/0401 , H01L2224/1134 , H01L2224/13144 , H01L2224/16145 , H01L2224/16225 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/85 , H01L2224/92125 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/07811 , H01L2924/12042 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/207 , H01L2924/3025 , H01L2924/3511 , H05K1/185 , H05K1/186 , H05K3/20 , H05K3/4614 , H05K3/462 , H05K3/4644 , H05K2201/10007 , H05K2201/10378 , H05K2201/10674 , H05K2201/10977 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2924/00
摘要: A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.
摘要翻译: 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中,将半导体芯片封装在第一基板和第二基板之间,并且在第一布线和第二布线之间形成电连接,以形成连接到半导体芯片的多层布线。
-
公开(公告)号:US08793868B2
公开(公告)日:2014-08-05
申请号:US13167203
申请日:2011-06-23
申请人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
发明人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
IPC分类号: H05K3/30
CPC分类号: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/56 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49822 , H01L23/49833 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/105 , H01L25/16 , H01L25/162 , H01L2221/68345 , H01L2224/0401 , H01L2224/1134 , H01L2224/13144 , H01L2224/16145 , H01L2224/16225 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/85 , H01L2224/92125 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/07811 , H01L2924/12042 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/207 , H01L2924/3025 , H01L2924/3511 , H05K1/185 , H05K1/186 , H05K3/20 , H05K3/4614 , H05K3/462 , H05K3/4644 , H05K2201/10007 , H05K2201/10378 , H05K2201/10674 , H05K2201/10977 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2924/00
摘要: A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.
摘要翻译: 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中,将半导体芯片封装在第一基板和第二基板之间,并且在第一布线和第二布线之间形成电连接,以形成连接到半导体芯片的多层布线。
-
公开(公告)号:US20090008765A1
公开(公告)日:2009-01-08
申请号:US11815580
申请日:2006-12-12
申请人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
发明人: Takaharu Yamano , Hajime Iizuka , Hideaki Sakaguchi , Toshio Kobayashi , Tadashi Arai , Tsuyoshi Kobayashi , Tetsuya Koyama , Kiyoaki Iida , Tomoaki Mashima , Koichi Tanaka , Yuji Kunimoto , Takashi Yanagisawa
CPC分类号: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/486 , H01L21/56 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49822 , H01L23/49833 , H01L23/5383 , H01L23/5384 , H01L23/5386 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/105 , H01L25/16 , H01L25/162 , H01L2221/68345 , H01L2224/0401 , H01L2224/1134 , H01L2224/13144 , H01L2224/16145 , H01L2224/16225 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/81005 , H01L2224/81193 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/85 , H01L2224/92125 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00011 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/07811 , H01L2924/12042 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/207 , H01L2924/3025 , H01L2924/3511 , H05K1/185 , H05K1/186 , H05K3/20 , H05K3/4614 , H05K3/462 , H05K3/4644 , H05K2201/10007 , H05K2201/10378 , H05K2201/10674 , H05K2201/10977 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , H01L2924/00
摘要: A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip.
摘要翻译: 公开了一种制造芯片嵌入式基板的方法。 该方法包括将半导体芯片安装在其上形成有第一布线的第一基板上的第一步骤; 以及将第一基板与形成有第二布线的第二基板接合的第二步骤。 在第二步骤中,将半导体芯片封装在第一基板和第二基板之间,并且在第一布线和第二布线之间形成电连接,以形成连接到半导体芯片的多层布线。
-
公开(公告)号:US09064929B2
公开(公告)日:2015-06-23
申请号:US12153519
申请日:2008-05-20
申请人: Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人: Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号: H01L21/762 , H01L21/3065 , H01L21/66
CPC分类号: H01L21/76254 , H01L21/3065 , H01L22/12 , H01L22/20 , H01L2924/014
摘要: There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
摘要翻译: 公开了一种用于制造SOI晶片的方法,包括:将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚,从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤,其中所述蚀刻步骤包括:执行粗蚀刻的阶段,如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布,进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。
-
公开(公告)号:US20150148174A1
公开(公告)日:2015-05-28
申请号:US14534470
申请日:2014-11-06
申请人: Koichi Nakamura , Koichi Tanaka
发明人: Koichi Nakamura , Koichi Tanaka
CPC分类号: F16D41/07 , B60K1/00 , B60K2001/001 , B60Y2306/03 , F16D41/06 , F16D2041/0601 , F16D2300/06 , F16H1/28 , F16H57/0467
摘要: Providing an electric vehicle transaxle suppressing occurrence of wear, seizure, etc. of a one-way clutch as compared to a conventional one. When an electric motor MG is driven and a one-way clutch 34 moves in a rotation axis C1 direction, the one-way clutch 34 comes into contact with a flange portion 46b of an inner race 46 or a supporting portion 30b of a transaxle housing 30 via a sliding washer 74 and, therefore, direct contact is prevented between the one-way clutch 34 and the flange portion 46b of the inner race 46 or the supporting portion 30b and wear, seizure, etc. of the one-way clutch 34 are suppressed.
摘要翻译: 提供一种电动车辆驱动桥,与传统的相比,抑制单向离合器的磨损,咬合等的发生。 当电动机MG被驱动并且单向离合器34沿旋转轴线C1方向移动时,单向离合器34与内座圈46的凸缘部分46b或驱动桥壳体的支撑部分30b接触 因此,单向离合器34与内座圈46或支承部30b的凸缘部46b之间的直接接触被防止,单向离合器34的磨损,咬住等 被压制。
-
公开(公告)号:US09003926B2
公开(公告)日:2015-04-14
申请号:US13057422
申请日:2009-04-28
申请人: Yoshihiro Mizuno , Koichi Tanaka , Yusuke Ogata
发明人: Yoshihiro Mizuno , Koichi Tanaka , Yusuke Ogata
CPC分类号: F16H41/02 , F16H7/06 , F16H41/30 , F16H45/02 , F16H57/0441 , Y10T74/19149 , Y10T74/19153
摘要: An oil passage structure of a chain-driven oil pump includes three lines of oil passages for supplying oil from the center support to the torque converter, a first oil passage for supplying oil to the torque converter through the inside of an input shaft of the torque converter, a second oil passage for supplying oil to the torque converter through a space defined by the outer periphery surface of the input shaft and the inner periphery surface of a stator shaft, and a third oil passage for supplying oil to the torque converter by bypassing the drive sprocket. The third oil passage is provided on the outer periphery side of the drive sprocket and in a position where it does not interfere with the operation of a chain. Accordingly, it is possible to utilize the flex lock-up to a maximum extent, and to reduce the diameter of the sprocket.
摘要翻译: 链式油泵的油路结构包括从中心支撑件向变矩器供给油的三条油路,用于通过扭矩输入轴的内部向变矩器供给油的第一油路 转换器,用于通过由输入轴的外周面和定子轴的内周面限定的空间向变矩器供给油的第二油路,以及用于通过旁路向变矩器供油的第三油路 驱动链轮。 第三油路设置在驱动链轮的外周侧,并且在不干扰链的操作的位置。 因此,可以最大程度地利用弯曲锁定,并且减小链轮的直径。
-
公开(公告)号:US08881883B2
公开(公告)日:2014-11-11
申请号:US13460349
申请日:2012-04-30
申请人: Augusto E. Barton , William Randall Fong , Gary Allen Pinkley , Edwin Marcum Pearce, Jr. , Kunio Morisawa , Kazunori Kaneko , Koichi Tanaka
发明人: Augusto E. Barton , William Randall Fong , Gary Allen Pinkley , Edwin Marcum Pearce, Jr. , Kunio Morisawa , Kazunori Kaneko , Koichi Tanaka
CPC分类号: B60T1/062 , F16H63/3425 , Y10T74/19637
摘要: A park lock of a transmission, including a park gear; a park pawl rotating about a pawl shaft, the park pawl having a pawl portion locking the park gear, the park pawl including a cam contact portion; a park rod responsive to an operation of a controller, the park rod having a cam portion pressing the cam contact portion to have park pawl engage the park gear; a park sleeve receiving the cam portion and defining a first contact point providing a reactive force to the cam contact portion of the park pawl pressing against the cam portion at a second contact point; a pawl torsional spring biasing the park pawl towards disengagement; and a pawl stopper limiting the rotation of the park pawl wherein motions are constrained within a plane of the transmission and components are rotatingly disposed in parallel axis bores in one half of a transmission case.
摘要翻译: 变速器的公园锁,包括公园装备; 围绕棘爪轴旋转的驻车爪,所述停车爪具有锁定所述公园齿轮的棘爪部分,所述驻车棘爪包括凸轮接触部分; 响应于控制器的操作的停放杆,所述停放杆具有按压所述凸轮接触部分以具有驻车爪的凸轮部分接合所述驻车齿轮; 接收所述凸轮部分并且限定向所述驻车棘爪的凸轮接触部分提供反作用力的第一接触点,所述第一接触点在第二接触点处抵靠所述凸轮部分; 一个棘爪扭力弹簧将公园爪偏压分离; 以及限制驻车爪的旋转的棘爪止动器,其中运动被限制在变速器的平面内,并且部件在变速箱的一半中旋转地设置在平行的轴孔中。
-
公开(公告)号:US08765576B2
公开(公告)日:2014-07-01
申请号:US12550340
申请日:2009-08-28
申请人: Shoji Akiyama , Atsuo Ito , Yoshihiro Kubota , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人: Shoji Akiyama , Atsuo Ito , Yoshihiro Kubota , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号: H01L21/30 , H01L21/762 , H01L21/3105
CPC分类号: H01L21/76254 , H01L21/31051 , H01L21/76251 , H01L31/1892 , Y02E10/50
摘要: A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate; heat-treating the laminated substrate and diffusing outwardly the oxide film.
摘要翻译: 提供一种制造叠层基板的方法。 该方法包括:在杨氏模量下,在硬度为150GPa以上的第一基板的至少表面形成氧化膜,然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层,至少通过氧化物膜层压第一基板和第二基板,然后将 在离子注入层中形成第二衬底以形成层压衬底; 对层压基板进行热处理并向外扩散氧化膜。
-
公开(公告)号:US08727928B2
公开(公告)日:2014-05-20
申请号:US13033679
申请日:2011-02-24
IPC分类号: F16H48/06
CPC分类号: F16H57/0483 , B60K1/00 , B60K2001/001 , F16C33/6659 , F16C2361/65 , F16H57/0441 , F16H57/0471 , F16H57/0476 , F16H63/3416 , H02K7/006 , H02K7/116
摘要: A vehicle power transmission device includes: a first power transmission member including a cylindrical shaft end portion rotatably supported via a first bearing on an inner circumferential side of a non-rotating support wall; and a second power transmission member supported on the inside of the cylindrical shaft end portion via a second bearing radially overlapping with the first bearing by the cylindrical shaft end portion to be rotatable concentrically and relatively to the first power transmission member, the second power transmission member including a circular disc gear portion protruded to an outer circumferential side at a predetermined distance from the second bearing in a shaft center direction of the second power transmission member, at a portion facing the first bearing, the gear portion having an annular inner circumferential guide protruding portion for guiding to the first bearing a lubricant oil that passes through the second bearing for lubrication, that enters into a gap between the second bearing and the gear portion, and that travels to the outer circumferential side due to the centrifugal force.
摘要翻译: 一种车辆动力传递装置,包括:第一动力传递构件,其包括圆筒形的轴端部,其通过非旋转支撑壁的内周侧上的第一轴承可旋转地支撑; 以及第二动力传递构件,其经由与所述第一轴承径向重叠的所述圆筒形轴端部的第二轴承支撑在所述圆筒形轴端部的内侧,以能够同心地且相对于所述第一动力传递构件旋转,所述第二动力传递构件 包括圆形盘齿轮部分,在与所述第二动力传递构件的轴中心方向相对于所述第二轴承预定距离的外周侧处,在面向所述第一轴承的部分处,所述齿轮部分具有环形内周引导件突出 用于引导到第一轴承的润滑油,其通过用于润滑的第二轴承,其进入第二轴承和齿轮部之间的间隙,并且由于离心力而行进到外周侧。
-
-
-
-
-
-
-
-
-