公开(公告)号：US6112976A

公开(公告)日：2000-09-05

申请号：US85804

申请日：1998-05-27

申请人： Louis-Marie Achard ,  Claude Blais ,  David Hirsch Danovitch ,  Jean-Francois Garneau ,  Michel Robert

发明人： Louis-Marie Achard ,  Claude Blais ,  David Hirsch Danovitch ,  Jean-Francois Garneau ,  Michel Robert

IPC分类号： B22F5/00 ,  B22F5/12 ,  B22F9/08 ,  B23K35/02 ,  B23K35/14 ,  B23K35/26 ,  H05K3/34 ,  B23K35/12 ,  H01R9/00 ,  H05K3/00

CPC分类号： B22F9/082 ,  B22F5/00 ,  B22F5/12 ,  B23K35/0244 ,  B23K35/268 ,  H05K3/3484 ,  B23K2201/42 ,  H05K2203/0425 ,  H05K2203/0557 ,  Y10T29/49149

摘要： The disclosed invention provides for a method of manufacturing solder columns for particular use in attaching substrates to a printed circuit board. The method results in columns of homogeneous composition and thus overcomes problems associated with the phenomena of segregation. The method includes the steps of forming particles of the metal composition to be used for the columns from a molten source of the composition. The solid particles are then formed into segments of homogeneous composition by drawing ingots of the composition into wire and severing the wire into segments.

摘要翻译： 所公开的发明提供了一种制造焊料柱的方法，用于将衬底附着到印刷电路板上特别有用。 该方法产生均匀组成的列，从而克服了与分离现象相关的问题。 该方法包括从组合物的熔融源形成用于柱的金属组合物的颗粒的步骤。 然后将固体颗粒通过将组合物的锭拉成线并将线切断成段而形成均匀组成的段。

公开(公告)号：US06390439B1

公开(公告)日：2002-05-21

申请号：US09287370

申请日：1999-04-07

申请人： Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

发明人： Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

IPC分类号： B29C3300

CPC分类号： B23K3/0623 ,  B23K3/0638 ,  B23K2101/40 ,  H05K3/3457 ,  Y10T156/10

摘要： Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a crystalline silicon substrate along a specific crystallographic plane is utilized to form a crystalline silicon face plate used in the present invention hybrid mold. In a preferred embodiment, a silicon face plate is bonded to a borosilicate glass backing plate by adhesive means in a method that ensures coplanarity is achieved between the top surfaces of the silicon face plate and the glass backing plate. In an alternate embodiment, an additional glass frame is used for bonding a silicon face plate to a glass backing plate, again with ensured coplanarity between the top surfaces of the silicon face plate and the glass frame. In a second alternate embodiment, a silicon face plate is encased in an extender material which may be borosilicate glass or a polymer. The encasing is performed on a leveling fixture such that the top surface of the silicon face plate and the top surface of the extender material after solidification are perfectly leveled.

公开(公告)号：US6003757A

公开(公告)日：1999-12-21

申请号：US70120

申请日：1998-04-30

申请人： Guy Daniel Beaumont ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber

发明人： Guy Daniel Beaumont ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber

IPC分类号： B23K3/06 ,  H01L21/00 ,  H01L21/60 ,  H05K3/34 ,  B23K3/00 ,  B23K31/02

CPC分类号： H05K3/3468 ,  B23K3/0623 ,  H01L21/67092 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/128

摘要： An apparatus and a method for transferring solder bumps from a solder mold to a solder-receiving substrate are disclosed. The apparatus includes a transfer fixture constructed by a base member, a lid member and a compressible member for holding a mold/substrate assembly therein. A plurality of compression pins are mounted through the lid member for supplying a uniform pressure on the mold/substrate assembly and for allowing lateral motion of the mold/substrate assembly relative to the transfer fixture due to a mismatch in the coefficients of thermal expansion. The compressible member is a cellulosic foam sheet which applies a uniform joining force across the entire surface of a wafer and assures abutting contact between the entire wafer and the mold surface. The foam sheet further assists in the lateral movement of the mold/substrate assembly relative to the base member of the transfer fixture.

摘要翻译： 公开了一种用于将焊料凸起从焊料转移到焊料接收衬底的装置和方法。 该装置包括由基座构件，盖构件和用于将模具/基板组件保持在其中的可压缩构件构成的转移夹具。 通过盖构件安装多个压缩销，以在模具/基板组件上提供均匀的压力，并且由于热膨胀系数的不匹配而允许模具/衬底组件相对于转移夹具的横向运动。 可压缩构件是纤维素泡沫片材，其在晶片的整个表面上施加均匀的接合力，并确保整个晶片和模具表面之间的邻接接触。 泡沫片材还有助于模具/基材组件相对于转印夹具的基底部件的横向移动。

公开(公告)号：US6149122A

公开(公告)日：2000-11-21

申请号：US169854

申请日：1998-10-09

申请人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Rajesh Shankerlal Patel ,  Stephen Roux ,  Carlos Juan Sambucetti ,  James Louis Speidell

发明人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Rajesh Shankerlal Patel ,  Stephen Roux ,  Carlos Juan Sambucetti ,  James Louis Speidell

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L23/485 ,  H05K3/34 ,  B29C33/00

CPC分类号： H05K3/3468 ,  H01L21/6835 ,  H01L24/11 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128

摘要： A method for forming solder bumps on an electronic structure including the steps of first providing a mold made by a sheet of a mold material having a thickness greater than that of the solder bumps to be formed, the mold material has sufficient optical transparency so as to allow the inspection of a solder material subsequently filled into the mold cavities that are formed in the mold material, and a coefficient of thermal expansion that is substantially similar to the substrate which the mold will be mated to, forming a multiplicity of mold cavities in the sheet of mold material, filling the multiplicity of mold cavities with a solder material, cooling the mold to a temperature that is sufficient to solidify the solder material in the multiplicity of mold cavities, positioning the mold intimately with the electronic structure such that the cavities facing the structure, and heating the mold and the structure together to a temperature sufficiently high such that the solder material transfers onto the electronic structure.

摘要翻译： 一种用于在电子结构上形成焊料凸块的方法，包括以下步骤：首先提供由具有大于待形成的焊料凸块的厚度的模具材料的片材制成的模具，所述模具材料具有足够的光学透明度，以便 允许检查随后填充到模具材料中形成的模腔中的焊料材料，以及与模具将被配合到的基板基本相似的热膨胀系数，在该模具中形成多个模腔 模具材料片材，用焊料材料填充多个模腔，将模具冷却到足以固化多个模腔中的焊料材料的温度，将模具与电子结构紧密地定位，使得空腔面向 结构，并将模具和结构加热到足够高的温度，使得焊料材料tr 在电子结构上。

公开(公告)号：US6127735A

公开(公告)日：2000-10-03

申请号：US710992

申请日：1996-09-25

申请人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

发明人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

IPC分类号： B23K35/26 ,  H01L21/60 ,  H05K3/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/81 ,  H05K3/3436 ,  H05K3/3468 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H05K2201/0379 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128 ,  H05K3/3463 ,  H05K3/3478 ,  Y02P70/613

摘要： A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip. The aligned mold/wafer assembly is then passed through a reflow furnace to effect the transfer of the low melting temperature solder in the mold cavities onto the tip of the high melting temperature solder bumps on the wafer. A dual metallurgical composition bump is thereby formed by the two different solder alloys.

摘要翻译： 可以在能够以低处理温度结合到另一电子设备的电子设备上形成互连的方法可以通过在形成突起的电子设备上沉积第一互连材料，然后沉积第二互连材料至少部分覆盖 所述突起，其中所述第二互连材料具有比所述第一互连材料低的流动温度。 该方法通过将熔融焊料流入具有微腔的模具中以填充空腔，然后使其固化来进行。 然后将模具与包含沉积有高熔点温度焊料凸块的芯片的硅晶片对准，使得模具的每个微腔与芯片上的每个高熔点温度焊料凸块对准。 然后将对准的模具/晶片组件通过回流炉，以将模腔中的低熔点焊料转移到晶片上的高熔点温度焊料凸块的尖端上。 由此由两种不同的焊料合金形成双金属组合物凸块。

公开(公告)号：US08689437B2

公开(公告)日：2014-04-08

申请号：US12490804

申请日：2009-06-24

申请人： Bing Dang ,  David Hirsch Danovitch ,  Mario John Interrante ,  John Ulrich Knickerbocker ,  Michael Jay Shapiro ,  Van Thanh Truong

发明人： Bing Dang ,  David Hirsch Danovitch ,  Mario John Interrante ,  John Ulrich Knickerbocker ,  Michael Jay Shapiro ,  Van Thanh Truong

IPC分类号： H01R9/00 ,  H05K3/00

CPC分类号： H01L21/6836 ,  H01L21/6835 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/95 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80006 ,  H01L2224/81005 ,  H01L2224/81011 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49155 ,  Y10T29/49204 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/83

摘要： A method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.

摘要翻译： 一种用于形成集成电路组件的方法包括：在第一裸片上形成第一焊料凸块，以及形成包括第一裸片，第一焊料凸点，第一焊剂和第一衬底的第一结构。 第一个模具被放置在第一个基础上。 第一焊锡凸块位于第一裸片和第一衬底之间。 第一通量使第一模具基本平坦并保持在第一基底上。

公开(公告)号：US06340630B1

公开(公告)日：2002-01-22

申请号：US09536557

申请日：2000-03-28

申请人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

发明人： Daniel George Berger ,  Guy Paul Brouillette ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  Bruce Lee Humphrey ,  Michael Liehr ,  William Thomas Motsiff ,  Carlos Juan Sambucetti

IPC分类号： A01L2144

CPC分类号： H01L24/81 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13609 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H05K3/3436 ,  H05K3/3463 ,  H05K3/3468 ,  H05K3/3478 ,  H05K2201/0379 ,  H05K2201/10992 ,  H05K2203/0113 ,  H05K2203/0338 ,  H05K2203/128 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05647

摘要： A method of forming interconnects on an electronic device that can be bonded to another electronic device at a low processing temperature can be carried out by depositing a first interconnect material on the electronic device forming protrusions and then depositing a second interconnect material to at least partially cover the protrusions, wherein the second interconnect material has a lower flow temperature than the first interconnect material. The method is carried out by flowing a molten solder into a mold having microcavities to fill the cavities and then allowed to solidify. The mold is then aligned with a silicon wafer containing chips deposited with high melting temperatures solder bumps such that each microcavity of the mold is aligned with each high melting temperature solder bump on the chip. The aligned mold/wafer assembly is then passed through a reflow furnace to effect the transfer of the low melting temperature solder in the mold cavities onto the tip of the high melting temperature solder bumps on the wafer. A dual metallurgical composition bump is thereby formed by the two different solder alloys.

摘要翻译： 可以在能够以低处理温度结合到另一电子设备的电子设备上形成互连的方法可以通过在形成突起的电子设备上沉积第一互连材料，然后沉积第二互连材料至少部分覆盖 所述突起，其中所述第二互连材料具有比所述第一互连材料低的流动温度。 该方法通过将熔融焊料流入具有微腔的模具中以填充空腔，然后使其固化来进行。 然后将模具与包含沉积有高熔点温度焊料凸块的芯片的硅晶片对准，使得模具的每个微腔与芯片上的每个高熔点温度焊料凸块对准。 然后将对准的模具/晶片组件通过回流炉，以将模腔中的低熔点焊料转移到晶片上的高熔点温度焊料凸块的尖端上。 由此由两种不同的焊料合金形成双金属组合物凸块。

公开(公告)号：US5897336A

公开(公告)日：1999-04-27

申请号：US864196

申请日：1997-05-28

申请人： Guy Paul Brouillette ,  David Hirsch Danovitch ,  Michael Liehr ,  William Thomas Motsiff ,  Judith Marie Roldan ,  Carlos Juan Sambucetti ,  Ravi F. Saraf

发明人： Guy Paul Brouillette ,  David Hirsch Danovitch ,  Michael Liehr ,  William Thomas Motsiff ,  Judith Marie Roldan ,  Carlos Juan Sambucetti ,  Ravi F. Saraf

IPC分类号： H01L21/60 ,  H01L23/556 ,  H05K1/18 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L24/83 ,  H01L23/556 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/14 ,  H05K3/244 ,  H05K3/321

摘要： An interconnect system that has low alpha particle emission characteristics for use in an electronic device includes a semiconductor chip that has an upper surface and spaced apart electrically resistive bumps positioned on conductive regions of the upper surface, the electrically resistive bumps are made of a composite material of a polymer and metal particles, and a substrate that has conductive regions bonded to the electrically resistive bumps in a bonding process wherein the electrically resistive bumps convert to electrically conductive bumps after the bonding process.

摘要翻译： 具有用于电子设备的低α粒子发射特性的互连系统包括半导体芯片，该半导体芯片具有位于上表面的导电区域上的上表面和间隔开的电阻凸起，电阻凸起由复合材料制成 的聚合物和金属颗粒，以及在接合工艺中具有与电阻凸块接合的导电区域的基板，其中在粘合工艺之后电阻凸块转换为导电凸块。

公开(公告)号：US20100326702A1

公开(公告)日：2010-12-30

申请号：US12490804

申请日：2009-06-24

申请人： Bing Dang ,  David Hirsch Danovitch ,  Mario John Interrante ,  John Ulrich Knickerbocker ,  Michael Jay Shapiro ,  Van Thanh Truong

发明人： Bing Dang ,  David Hirsch Danovitch ,  Mario John Interrante ,  John Ulrich Knickerbocker ,  Michael Jay Shapiro ,  Van Thanh Truong

IPC分类号： H05K1/02 ,  H05K3/00

CPC分类号： H01L21/6836 ,  H01L21/6835 ,  H01L24/02 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/95 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/80006 ,  H01L2224/81005 ,  H01L2224/81011 ,  H01L2224/81801 ,  H01L2224/83005 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49155 ,  Y10T29/49204 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/83

摘要： Methods and apparatus for forming an integrated circuit assembly are presented, for example, three dimensional integrated circuit assemblies. Lower height 3DIC assemblies due Use of, for example, thinned wafers, low-height solder bumps, and through silicon vias provide for low height three dimensional integrated circuit assemblies. For example, a method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.

摘要翻译： 提出了用于形成集成电路组件的方法和装置，例如，三维集成电路组件。 较低的高度3DIC组件由于使用例如薄化晶片，低高度焊料凸块和通过硅通孔，可提供低高度三维集成电路组件。 例如，一种用于形成集成电路组件的方法包括在第一裸片上形成第一焊料凸块，以及形成包括第一裸片，第一焊料凸块，第一焊剂和第一衬底的第一结构。 第一个模具被放置在第一个基础上。 第一焊锡凸块位于第一裸片和第一衬底之间。 第一通量使第一模具基本平坦并保持在第一基底上。

公开(公告)号：US06832747B2

公开(公告)日：2004-12-21

申请号：US10128210

申请日：2002-04-23

申请人： Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

发明人： Steven A. Cordes ,  David Hirsch Danovitch ,  Peter Alfred Gruber ,  James Louis Speidell ,  Joseph Peter Zinter

IPC分类号： B29C3300

CPC分类号： B23K3/0623 ,  B23K3/0638 ,  B23K2101/40 ,  H05K3/3457 ,  Y10T156/10

摘要： Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a crystalline silicon substrate along a specific crystallographic plane is utilized to form a crystalline silicon face plate used in the present invention hybrid mold. In a preferred embodiment, a silicon face plate is bonded to a borosilicate glass backing plate by adhesive means in a method that ensures coplanarity is achieved between the top surfaces of the silicon face plate and the glass backing plate. In an alternate embodiment, an additional glass frame is used for bonding a silicon face plate to a glass backing plate, again with ensured coplanarity between the top surfaces of the silicon face plate and the glass frame. In a second alternate embodiment, a silicon face plate is encased in an extender material which may be borosilicate glass or a polymer. The encasing is performed on a leveling fixture such that the top surface of the silicon face plate and the top surface of the extender material after solidification are perfectly leveled.

摘要翻译： 公开了用于模制用于熔融焊料筛选过程的多个焊球的混合模具和用于制备这种模具的方法。 利用用于通过沿着特定结晶平面各向异性蚀刻晶体硅衬底而形成金字塔形状的多个空腔的方法来形成本发明混合模具中使用的结晶硅面板。 在一个优选的实施例中，硅面板通过粘合方法以一种确保在硅面板和玻璃背板的顶表面之间实现共面性的方法结合到硼硅酸盐玻璃背板上。 在替代实施例中，另外的玻璃框架用于将硅面板粘合到玻璃背板，再次确保硅面板的顶表面和玻璃框架之间的共面性。 在第二替代实施例中，硅面板封装在可以是硼硅酸盐玻璃或聚合物的增量材料中。 在平整装置上进行包装，使得硅面板的顶表面和固化后的增量材料的顶表面完美平整。