公开(公告)号：US5903585A

公开(公告)日：1999-05-11

申请号：US763714

申请日：1996-12-13

申请人： Martin David Dawson ,  Timothy David Bestwick ,  Haruhisa Takiguchi

发明人： Martin David Dawson ,  Timothy David Bestwick ,  Haruhisa Takiguchi

IPC分类号： H01S3/05 ,  H01S5/00 ,  H01S5/02 ,  H01S5/06 ,  H01S5/068 ,  H01S5/183 ,  H01S5/22 ,  H01S5/42 ,  H01S3/19

CPC分类号： H01S5/3201 ,  H01S5/0612 ,  H01S5/068 ,  H01S5/183 ,  H01S2301/176 ,  H01S5/0607 ,  H01S5/423

摘要： A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying means in the form of a layer of polymer material having a coefficient of thermal expansion which is greater than that of the optically active region. The layer surrounds the optically active region so as to apply a compressive strain to the latter so as to compensate at least partially for temperature-induced changes in the gain spectrum peak of the optically active region caused by ohmic heating of the device.

摘要翻译： 诸如VCSEL，RCLED或DFB激光二极管的单腔模式光电子器件包括蚀刻柱或台面结构，其包括具有系数的聚合物材料层形式的光学活性区域和应变施加装置 的热膨胀大于光学活性区域的热膨胀。 该层围绕光学有源区域，以便向后者施加压缩应变，以便至少部分地补偿由该器件的欧姆加热引起的光学活性区域的增益谱峰的温度引起的变化。

公开(公告)号：US20130277684A1

公开(公告)日：2013-10-24

申请号：US13977456

申请日：2011-12-21

申请人： Masahiro Araki ,  Shinya Yoshida ,  Haruhisa Takiguchi ,  Atsushi Ogawa ,  Takao Kinoshita ,  Tohru Murata ,  Takeshi Funaki ,  Masayuki Hoteida

发明人： Masahiro Araki ,  Shinya Yoshida ,  Haruhisa Takiguchi ,  Atsushi Ogawa ,  Takao Kinoshita ,  Tohru Murata ,  Takeshi Funaki ,  Masayuki Hoteida

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/812 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

摘要翻译： 一种氮化物半导体结构，其中在具有凹部的基板上设置有第一氮化物半导体下层，在其表面设置有位于所述凹部之间的突出部，所述第一氮化物半导体下层具有至少6个第一倾斜面平面， 突出部分的外侧的突出部分和第二氮化物半导体下层掩埋第一倾斜面面，氮化物半导体发光元件，氮化物半导体晶体管元件，氮化物半导体结构的制造方法和 提供了制造氮化物半导体元件的方法。

公开(公告)号：US5473173A

公开(公告)日：1995-12-05

申请号：US245314

申请日：1994-05-18

申请人： Haruhisa Takiguchi ,  Kousei Takahashi ,  Martin D. Dawson ,  Geoffrey Duggan

发明人： Haruhisa Takiguchi ,  Kousei Takahashi ,  Martin D. Dawson ,  Geoffrey Duggan

IPC分类号： H01L21/20 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01L27/14 ,  H01L29/205 ,  H01L31/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/34 ,  H01S5/3403

摘要： A quantum well structure is provided which is capable of efficiently confining electrons and holes in a quantum well layer. The quantum well structure includes a first cladding layer, a second cladding layer, and a plurality of quantum well layers and one or more barrier layers each disposed between the first cladding layer and the second cladding layer. The quantum well layers and the barrier layers are laminated in an alternating manner. The quantum well layers include at least two selected from the group consisting of a layer having tensile strain, a layer having no strain, and a layer having compressive strain. The thickness of each of the quantum well layers is selected so that the energy difference in each of the quantum well layers between the ground quantum state of an electron at the conduction band and the ground quantum state of a hole at the valence band is substantially the same.

摘要翻译： 提供了能够有效地限制量子阱层中的电子和空穴的量子阱结构。 量子阱结构包括第一覆层，第二覆层和多个量子阱层以及一个或多个阻挡层，每个势垒层设置在第一覆层和第二覆层之间。 量子阱层和阻挡层以交替的方式层叠。 量子阱层包括选自具有拉伸应变的层，不具有应变的层和具有压应变的层的至少两个。 选择每个量子阱层的厚度，使得在导带处的电子的基准量子态与价带的空穴的基准量子态之间的每个量子阱层中的能量差基本上是 相同。

公开(公告)号：US5309472A

公开(公告)日：1994-05-03

申请号：US903785

申请日：1992-06-24

申请人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

发明人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

IPC分类号： H01L33/06 ,  H01L33/20 ,  H01S5/026 ,  H01S5/12 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01S5/34 ,  H01S5/343 ,  H01S3/08

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/32 ,  H01L33/20 ,  H01S5/026 ,  H01S5/1231 ,  H01S5/223 ,  H01S5/32308 ,  H01S5/327 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  H01S5/343 ,  H01S5/3432

摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

摘要翻译： 半导体器件包括包括基本上平坦的有源层的多层结构，以及彼此相邻的第一半导体层和第二半导体层，所述半导体层在其间的界面处具有波纹状; 以及连接到所述多层结构的生成装置。 通过在包括有源层的波导区域中使用发生器件产生电磁场强度分布，并且有源层包括具有对应于波纹的分布图案的增益分布。 通过在第一半导体层的上表面上形成波纹并通过使用气相生长法一次形成包括第二半导体层和活性层的多层结构的其余部分来制造多层结构，以使 活性层基本上平坦。 然后，生成装置形成为与多层结构接触。

公开(公告)号：US5303255A

公开(公告)日：1994-04-12

申请号：US85129

申请日：1993-06-29

申请人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Chitose Nakanishi ,  Satoshi Sugahara

发明人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Chitose Nakanishi ,  Satoshi Sugahara

IPC分类号： H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S3/08 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/2231

摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove, and a diffraction grating formed in the bottom of the stripe groove. The current blocking structure is formed over an active layer for laser oscillation, and it includes an etch stop layer against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove is controlled by the thickness of the optical guiding layer, enabling oscillation of the fundamental transverse mode.

摘要翻译： 一种分布式反馈半导体激光器件，包括具有条纹槽的电流阻挡结构和形成在条纹槽底部的衍射光栅。 电流阻挡结构形成在用于激光振荡的有源层上，并且其包括抵抗电流阻挡结构的较低部分中的凹槽蚀刻的蚀刻停止层。 条形槽内的横向折射率分布由导光层的厚度控制，使得能够摆动基本横模。

公开(公告)号：US4997747A

公开(公告)日：1991-03-05

申请号：US253811

申请日：1988-10-05

申请人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Sadayoshi Matsui

发明人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Sadayoshi Matsui

IPC分类号： G02B5/18 ,  G02B5/32 ,  G02B6/124 ,  H01S5/00 ,  H01S5/12

CPC分类号： H01S5/12 ,  G02B5/1857 ,  G02B5/32 ,  G02B6/124 ,  H01S5/124 ,  Y10S359/90

摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.

公开(公告)号：US4975922A

公开(公告)日：1990-12-04

申请号：US368274

申请日：1989-06-19

申请人： Chitose Sakane ,  Haruhisa Takiguchi ,  Hiroaki Kudo ,  Satoshi Sugahara

发明人： Chitose Sakane ,  Haruhisa Takiguchi ,  Hiroaki Kudo ,  Satoshi Sugahara

IPC分类号： G02B1/10 ,  G02B1/11 ,  H01L31/04 ,  H01L33/10 ,  H01L33/26 ,  H01L33/44 ,  H01S5/00 ,  H01S5/028

CPC分类号： G02B1/10 ,  H01S5/028 ,  H01S5/0281

摘要： A multi-layered dielectric film that is coated on the end surfaces or other surfaces of optical products, wherein said multi-layered dielectric film is composed of alternate layers consisting of two kinds of dielectric layer, one of which is a first dielectric layer of TiO.sub.2 or ZnS with a high refractive index n.sub.1 and the other of which is a second dielectric layer of Al.sub.2 O.sub.3 with a low refractive index n.sub.2.

公开(公告)号：US4908831A

公开(公告)日：1990-03-13

申请号：US314363

申请日：1989-02-22

申请人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Sadayoshi Matsui

发明人： Toshihiko Yoshida ,  Haruhisa Takiguchi ,  Shinji Kaneiwa ,  Hiroaki Kudo ,  Sadayoshi Matsui

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/24

CPC分类号： H01S5/24 ,  H01S5/227 ,  H01S5/0035 ,  H01S5/2235 ,  H01S5/2237 ,  H01S5/2275

摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

公开(公告)号：US07349154B2

公开(公告)日：2008-03-25

申请号：US10833764

申请日：2004-04-27

申请人： Tomoyuki Aiura ,  Shuichi Yoshinaka ,  Takao Abumi ,  Haruhisa Takiguchi

发明人： Tomoyuki Aiura ,  Shuichi Yoshinaka ,  Takao Abumi ,  Haruhisa Takiguchi

IPC分类号： G03B21/56 ,  G03B21/60

CPC分类号： G03B21/56

摘要： The reflection type screen comprises a reflection layer which is disposed on the opposite side to the projected light incident side of the screen, a horizontal view angle increasing layer which is disposed on the light incident side of the reflection layer, and a diffusion layer which is disposed on the light incident side of the horizontal view angle increasing layer. The horizontal view angle increasing layer has an array of convex ridges which are raised in a rear direction of the screen. Since the longitudinal direction of the ridges is aligned with the vertical direction of the screen, the view angle characteristics of the screen in a horizontal direction are improved and the diffusion characteristics of the screen in a vertical direction can be suppressed for preventing external disturbing light from an upper illumination light from being reflected toward the observers.

摘要翻译： 反射型屏幕包括设置在与屏幕的投射光入射侧相反的一侧的反射层，设置在反射层的光入射侧的水平视角增加层和扩散层， 设置在水平视角增加层的光入射侧。 水平视角增加层具有在屏幕的后方向上升起的凸脊阵列。 由于脊的纵向与屏幕的垂直方向一致，所以屏幕在水平方向上的视角特性得到改善，并且可以抑制屏幕在垂直方向上的扩散特性，以防止屏幕的外部干扰光 上部照明光被朝向观察者反射。

公开(公告)号：US5654557A

公开(公告)日：1997-08-05

申请号：US249051

申请日：1994-05-25

申请人： Mototaka Taneya ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Haruhisa Takiguchi

发明人： Mototaka Taneya ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Haruhisa Takiguchi

IPC分类号： H01L21/20 ,  H01L29/06 ,  H01L29/12 ,  H01L29/80 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34 ,  H01L27/12 ,  H01L45/00

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01S5/341

摘要： A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.

摘要翻译： 量子线结构包括第一层，其厚度足够小于介质中的电子波的德布罗意波长，第二层和第三层，其设置在第一层上和下面，并且分别具有较大的禁带宽度 其中第一层具有相对较小曲率的区域和其横截面具有相对较大曲率的区域，并且具有较小曲率的区域的宽度为50nm以下。