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    Methods of forming light emitting devices having current reducing structures
    8.
    发明授权
    Methods of forming light emitting devices having current reducing structures 有权
    形成具有电流还原结构的发光器件的方法

    公开(公告)号：US08436368B2

    公开(公告)日：2013-05-07

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L27/15

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    External extraction light emitting diode based upon crystallographic faceted surfaces
    9.
    发明授权
    External extraction light emitting diode based upon crystallographic faceted surfaces 有权
    基于晶面刻面的外部提取发光二极管

    公开(公告)号：US08357923B2

    公开(公告)日：2013-01-22

    申请号：US12834608

    申请日：2010-07-12

    申请人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    发明人： John A. Edmond ,  David B. Slater, Jr. ,  Hua Shuang Kong ,  Matthew Donofrio

    IPC分类号： H01L29/06

    CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

    摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

    摘要翻译： 公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。 台面具有沿着III族氮化物的折射晶面的侧壁。 还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻 已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。 该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。