公开(公告)号：US20050030823A1

公开(公告)日：2005-02-10

申请号：US10910903

申请日：2004-08-04

申请人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

发明人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L23/36 ,  H01L25/04 ,  H01L25/16 ,  H01L25/18 ,  H05K1/03 ,  H05K3/00 ,  H05K3/28 ,  H05K3/38 ,  G11C8/02

CPC分类号： H01L23/4951 ,  H01L23/49531 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/165 ,  H01L25/18 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/01012 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/386 ,  H05K2201/0209 ,  H05K2203/0315 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to provide a low-cost and high heat-radiating electronic circuit device featuring high compactness, little warpage, high air tightness, high moldability, high mass productivity, high reliability against thermal shocks, and high oil-proof reliability, a module structure made by packing a whole multi-layer circuit board which connects a semiconductor operating element, semiconductor memory elements, and passive elements thereon and part of a supporting material on which said multi-layer circuit board is placed into a single package by transfer-molding; wherein said multi-layer circuit board and said supporting material are bonded together with a compound metallic material made up from copper oxide and at least one metal selected from a set of gold, silver, and copper.

摘要翻译： 为了提供具有高紧凑性，小弯曲性，高气密性，高成型性，高质量生产率，高耐热冲击可靠性和高耐油可靠性的低成本高散热电子电路装置，模块结构 通过将通过转印成型将半导体操作元件，半导体存储元件和无源元件及其上放置有多层电路板的支撑材料的一部分封装在单个封装中的整个多层电路板制成; 其中所述多层电路板和所述支撑材料用由氧化铜和至少一种选自金，银和铜的金属组成的复合金属材料结合在一起。

公开(公告)号：US07298039B2

公开(公告)日：2007-11-20

申请号：US10910903

申请日：2004-08-04

申请人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

发明人： Nobutake Tsuyuno ,  Toshiaki Ishii ,  Toshiya Satoh ,  Mitsuhiro Masuda

IPC分类号： H01L23/22

CPC分类号： H01L23/4951 ,  H01L23/49531 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/165 ,  H01L25/18 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/01012 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/284 ,  H05K3/386 ,  H05K2201/0209 ,  H05K2203/0315 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In order to provide a low-cost and high heat-radiating electronic circuit device featuring high compactness, little warpage, high air tightness, high moldability, high mass productivity, high reliability against thermal shocks, and high oil-proof reliability, a module structure made by packing a whole multi-layer circuit board which connects a semiconductor operating element, semiconductor memory elements, and passive elements thereon and part of a supporting material on which said multi-layer circuit board is placed into a single package by transfer-molding; wherein said multi-layer circuit board and said supporting material are bonded together with a compound metallic material made up from copper oxide and at least one metal selected from a set of gold, silver, and copper.

摘要翻译： 为了提供具有高紧凑性，小弯曲性，高气密性，高成型性，高质量生产率，高耐热冲击可靠性和高耐油可靠性的低成本高散热电子电路装置，模块结构 通过将通过转印成型将半导体操作元件，半导体存储元件和无源元件及其上放置有多层电路板的支撑材料的一部分封装在单个封装中的整个多层电路板制成; 其中所述多层电路板和所述支撑材料用由氧化铜和至少一种选自金，银和铜的金属组成的复合金属材料结合在一起。

公开(公告)号：US07217992B2

公开(公告)日：2007-05-15

申请号：US10861523

申请日：2004-06-07

申请人： Masahiko Ogino ,  Takumi Ueno ,  Shuji Eguchi ,  Akira Nagai ,  Toshiya Satoh ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Tadanori Segawa ,  Nobutake Tsuyuno ,  Asao Nishimura ,  Ichiro Anjoh

发明人： Masahiko Ogino ,  Takumi Ueno ,  Shuji Eguchi ,  Akira Nagai ,  Toshiya Satoh ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Tadanori Segawa ,  Nobutake Tsuyuno ,  Asao Nishimura ,  Ichiro Anjoh

IPC分类号： H01L23/02 ,  H01L23/28 ,  H01L21/00

CPC分类号： H01L23/3171 ,  H01L23/3114 ,  H01L23/3164 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2924/00012

摘要： Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.The semiconductor device 17 comprising: a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on a same plane.

摘要翻译： 提供半导体器件，半导体晶片和半导体模块：其中半导体器件具有小的翘曲; 几乎不产生芯片边缘的损坏和跌落试验中的裂纹; 半导体装置的安装可靠性和大规模生产性优异。 半导体器件17包括：半导体芯片64; 设置在半导体芯片的形成有电路和电极的平面上的多孔应力缓和层3; 设置在应力缓和层上并与电极连接的电路层2; 和设置在电路层上的外部端子10; 其中在半导体芯片的与应力缓和层相反的平面上形成有机保护膜7，并且应力缓和层，半导体芯片6和保护膜7的各个侧面在外部暴露在外部 飞机

公开(公告)号：US06888230B1

公开(公告)日：2005-05-03

申请号：US09429297

申请日：1999-10-28

申请人： Masahiko Ogino ,  Takumi Ueno ,  Shuji Eguchi ,  Akira Nagai ,  Toshiya Satoh ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Tadanori Segawa ,  Nobutake Tsuyuno ,  Asao Nishimura ,  Ichiro Anjoh

发明人： Masahiko Ogino ,  Takumi Ueno ,  Shuji Eguchi ,  Akira Nagai ,  Toshiya Satoh ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Tadanori Segawa ,  Nobutake Tsuyuno ,  Asao Nishimura ,  Ichiro Anjoh

IPC分类号： H01L23/12 ,  H01L21/301 ,  H01L21/46 ,  H01L21/48 ,  H01L21/50 ,  H01L21/60 ,  H01L23/28 ,  H01L23/31 ,  H01L23/50 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3171 ,  H01L23/3114 ,  H01L23/3164 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05026 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2924/00012

摘要： Semiconductor devices, semiconductor wafers, and semiconductor modules are provided, wherein: the semiconductor device has a small warp; damage at the chip edge and cracks occurring in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor includes a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on the same plane.

摘要翻译： 提供半导体器件，半导体晶片和半导体模块，其中：半导体器件具有小的翘曲; 几乎不产生芯片边缘的损伤和在滴下试验中发生的裂纹; 半导体装置的安装可靠性和大规模生产性优异。 该半导体包括半导体芯片64; 设置在半导体芯片的形成有电路和电极的平面上的多孔应力缓和层3; 设置在应力缓和层上并与电极连接的电路层2; 和设置在电路层上的外部端子10; 其中在半导体芯片的与应力缓和层相反的平面上形成有机保护膜7，并且应力缓和层，半导体芯片6和保护膜7的各个侧面在外部暴露在外部 飞机

公开(公告)号：US08339795B2

公开(公告)日：2012-12-25

申请号：US12831737

申请日：2010-07-07

申请人： Nobutake Tsuyuno ,  Itaru Tanabe ,  Toshiaki Ishii ,  Hiroshi Kameyama

发明人： Nobutake Tsuyuno ,  Itaru Tanabe ,  Toshiaki Ishii ,  Hiroshi Kameyama

IPC分类号： H05K7/00

CPC分类号： H05K5/0034 ,  H05K3/202 ,  H05K2201/0969 ,  H05K2201/10409 ,  H05K2201/10598 ,  Y10T29/49002

摘要： An object of the present invention is to provide a mechanically and electrically integrated type electronic control apparatus which can be embedded in a compact mechanical part, and has a compact structure while having a high wiring freedom, a high heat dissipation and a high reliability. In a mechanically and electrically integrated type electronic control apparatus provided with a control signal generating part, and an angular wiring member connecting the control signal generating part and a controlled part controlled by a control signal of the control signal generating part, installed within a conductive casing, at least the wiring member has a fixed hole, a surface including the fixed hole is coated in an insulative manner, and the fixed hole is fixed to the conductive casing mechanically while keeping an insulating property.

摘要翻译： 本发明的目的是提供一种可以嵌入在紧凑的机械部件中的机电一体型的电子控制装置，并且具有紧凑的结构，同时具有高布线自由度，高散热和高可靠性。 在具有控制信号生成部件的机电一体化型电子控制装置中，以及连接控制信号生成部和被控制信号生成部的控制信号控制的受控部的角配线部件， 至少布线构件具有固定孔，包括固定孔的表面以绝缘的方式被涂覆，并且固定孔在保持绝缘性的同时机械地固定到导电壳体上。

公开(公告)号：US6097100A

公开(公告)日：2000-08-01

申请号：US915334

申请日：1997-08-20

申请人： Shuji Eguchi ,  Yasuhide Sugawara ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Akira Nagai ,  Ryou Moteki ,  Ogino Masahiko ,  Masanori Segawa ,  Rie Hattori ,  Nobutake Tsuyuno ,  Takumi Ueno ,  Atsushi Nakamura ,  Asao Nishimura

发明人： Shuji Eguchi ,  Yasuhide Sugawara ,  Toshiaki Ishii ,  Hiroyoshi Kokaku ,  Akira Nagai ,  Ryou Moteki ,  Ogino Masahiko ,  Masanori Segawa ,  Rie Hattori ,  Nobutake Tsuyuno ,  Takumi Ueno ,  Atsushi Nakamura ,  Asao Nishimura

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/495 ,  H01L23/28

CPC分类号： H01L23/4951 ,  H01L23/293 ,  H01L23/3128 ,  H01L2224/05624 ,  H01L2224/32057 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/92 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/181

摘要： A resin encapsulated semiconductor element is encapsulated with resin composition containing an organic compound selected from the group consisting of organobromine compounds, organophosphorus compounds and organonitrogen compounds, an inorganic filler, and a metal borate. The obtained resin encapsulated semiconductor element has the same flame resistance as a conventional semiconductor element which is encapsulated with a resin composition containing a halogen and antimony compound, and furthermore, has remarkably improved reliabilities regarding moisture resistance and storing at a high temperature by effects of the contained metal borate for suppressing generation of or trapping released gas components, such as halogen or phosphorus, and others.

摘要翻译： 树脂封装的半导体元件用含有有机化合物的树脂组合物包封，所述有机化合物选自有机溴化合物，有机磷化合物和有机氮化合物，无机填料和金属硼酸盐。 所获得的树脂封装的半导体元件具有与用含有卤素和锑化合物的树脂组合物封装的常规半导体元件相同的阻燃性，并且还具有显着提高的耐湿性的可靠性和高温下的存储 含有金属硼酸盐，用于抑制诸如卤素或磷的释放气体组分的产生或捕获等。

公开(公告)号：US09326425B2

公开(公告)日：2016-04-26

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H05K7/02 ,  H05K7/20 ,  H01L23/433 ,  H01L25/16 ,  H02M7/00 ,  H01L23/473 ,  H01L25/18 ,  H01L23/36 ,  H01L25/11 ,  H01L23/367

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×∈r, where a relative permittivity of the insulating member is ∈r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 散发功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×∈r的关系，其中绝缘构件的相对介电常数为∈r，a 伴随功率半导体器件的ON / OFF开关操作的导体板和散热板之间产生的浪涌电压为Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US08723306B2

公开(公告)日：2014-05-13

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。

公开(公告)号：US20130279230A1

公开(公告)日：2013-10-24

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H02M7/00 ,  H05K7/20

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 消耗功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×ε的关系，其中绝缘部件的相对介电常数为Er，浪涌电压 在导体板和散热板之间产生的功率半导体器件的ON / OFF开关操作是Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US20130119525A1

公开(公告)日：2013-05-16

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。