摘要:
A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,−) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,−) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.
摘要:
A capacitor structure includes a first electrode provided on an insulating basic member, a dielectric member provided on the electrode, a second electrode provided on the dielectric member, and a plurality of electrode terminals aligned in a grid on the electrode. Respective electrode terminals are aligned such that opposite polarities (+,−) are alternately allocated to neighboring electrode terminals, and respective divided partial electrodes of the first and second electrodes are also aligned such that opposite polarities (+,−) are alternately allocated to neighboring electrode terminals. According to this structure, the inductance of the capacitor structure is reduced and thus the decoupling effect can be effectively achieved. This contributes to a stable operation in the high-frequency (GHz band) range.
摘要:
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure is disclosed. The multilayer wiring substrate includes a dielectric layer including a resin material mixed with an inorganic filler, wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant.
摘要:
A multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring structure is disclosed. The multilayer wiring substrate includes a dielectric layer including a resin material mixed with an inorganic filler, wherein the inorganic filler is fabricated by mixing a paraelectric filler with an inorganic filler having a high dielectric constant.
摘要:
The present invention discloses a method of manufacturing a wiring substrate to which a semiconductor chip mounted. The method includes the steps of forming a base, forming a peeling layer on the base, forming a capacitor having a plurality of layers on the peeling layer, and forming a wiring part in the capacitor for connecting the capacitor to the semiconductor chip.
摘要:
The present invention discloses a method of manufacturing a wiring substrate to which a semiconductor chip mounted. The method includes the steps of forming a base, forming a peeling layer on the base, forming a capacitor having a plurality of layers on the peeling layer, and forming a wiring part in the capacitor for connecting the capacitor to the semiconductor chip.
摘要:
A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.
摘要:
A capacitor formed of parallel wiring lines and a capacitor dielectric film positioned between adjacent wiring lines and in direct contact with each of said wiring lines. A method of producing such a capacitor is also disclosed.
摘要:
A wiring layer for serving as a first electrode layer of a capacitor portion patterned in a predetermined shape on an insulative base member is formed. A resin layer for serving as a dielectric layer of the capacitor portion is formed on a surface of the wiring layer using an electrophoretic process. Another wiring layer for serving as a second electrode layer of the capacitor portion patterned in a predetermined shape by patterning on the insulative base member inclusive of the resin layer is formed.
摘要:
According to one embodiment, there is provided a semiconductor package manufacturing method utilizing a support body in which a first layer is stacked on a second layer, the method including: a first step of forming an opening in the first layer to expose the second layer therethrough; a second step of arranging a semiconductor chip on the second layer through the opening; a third step of forming a resin portion on the first layer to cover the semiconductor chip; and a fourth step of forming a wiring structure on the resin portion so as to be electrically connected to the semiconductor chip.