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    Lithography laser with beam delivery and beam pointing control
    1.
    发明授权
    Lithography laser with beam delivery and beam pointing control 失效
    光束激光器具有光束传递和光束指向控制

    公开(公告)号：US07230964B2

    公开(公告)日：2007-06-12

    申请号：US10425361

    申请日：2003-04-29

    申请人： Plash P. Das ,  R. Kyle Webb ,  Marco Giovanardi ,  Gregory Francis ,  Huckleberry B. Dorn ,  Kyle P. Erlandsen ,  John W. Nelson ,  Richard L. Sandstrom ,  Alexander I. Ershov

    发明人： Plash P. Das ,  R. Kyle Webb ,  Marco Giovanardi ,  Gregory Francis ,  Huckleberry B. Dorn ,  Kyle P. Erlandsen ,  John W. Nelson ,  Richard L. Sandstrom ,  Alexander I. Ershov

    IPC分类号： H01S3/22 ,  G21G5/00

    CPC分类号： G03F7/7055 ,  G02B26/0816 ,  G02B27/0972 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70058 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/036 ,  H01S3/041 ,  H01S3/0971 ,  H01S3/136 ,  H01S3/137 ,  H01S3/225 ,  H01S3/2333 ,  H01S3/2366

    摘要： The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source with a beam delivery to a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. Preferred embodiments include equipment for beam attenuation, equipment for automatic feedback beam alignment and equipment for accurate optics module positioning at installation and during maintenance. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.

    摘要翻译： 本发明提供了一种向生产线机器输送光束的模块化高重复率紫外线气体放电激光光源。 该系统包括具有光束指向控制的封闭和清除的光束路径，用于将激光束传送到期望的位置，例如生产线机器的入口。 优选实施例包括用于光束衰减的设备，用于自动反馈光束对准的设备和用于在安装和维护期间精确的光学模块定位的设备。 在优选实施例中，生产线机器是光刻机，并且提供两个单独的放电室，其中之一是主振荡器的一部分，其产生在第二放电室中放大的非常窄的带状晶体束。 该MOPA系统能够以大大提高的光束质量将输出脉冲能量大约增加到相当的单室激光器系统的两倍。 与现有技术的激光系统相比，脉冲放大器使输出脉冲长度加倍，导致脉冲功率（mJ / ns）的降低。 该优选实施例能够在光刻系统晶片平面处提供照明，其在光刻系统的整个使用寿命期间大致恒定，尽管光学部件的实质性劣化。

    Laser Produced Plasma EUV Light Source
    6.
    发明申请
    Laser Produced Plasma EUV Light Source 有权
    激光产生的等离子体EUV光源

    公开(公告)号：US20100294953A1

    公开(公告)日：2010-11-25

    申请号：US12721317

    申请日：2010-03-10

    申请人： Georgiy O. Vaschenko ,  Alexander I. Ershov ,  Richard L. Sandstrom

    发明人： Georgiy O. Vaschenko ,  Alexander I. Ershov ,  Richard L. Sandstrom

    IPC分类号： H05G2/00

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

    摘要： A device is disclosed herein which may include a plasma generating system comprising a source of target material droplets and a laser producing a beam irradiating the droplets at an irradiation region, the plasma producing EUV radiation, wherein the droplet source comprises a fluid exiting an orifice and a sub-system producing a disturbance in the fluid which generates droplets having differing initial velocities causing the spacing between at least some adjacent droplets to decrease as the droplets travel to the irradiation region.

    摘要翻译： 本文公开了一种装置，其可以包括等离子体产生系统，其包括目标材料液滴源和产生在照射区域照射液滴的光束的激光器，等离子体产生EUV辐射，其中液滴源包括离开孔口的流体， 产生流体中的扰动的子系统产生具有不同初始速度的液滴，导致至少一些相邻液滴之间的间隔随着液滴行进到照射区域而减小。

    High resolution spectral measurement device
    10.
    发明授权
    High resolution spectral measurement device 有权
    高分辨率光谱测量装置

    公开(公告)号：US06713770B2

    公开(公告)日：2004-03-30

    申请号：US10098975

    申请日：2002-03-15

    申请人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith ,  Daniel J. W. Brown

    发明人： Richard L. Sandstrom ,  Alexander I. Ershov ,  William N. Partlo ,  Igor V. Fomenkov ,  Scott T. Smith ,  Daniel J. W. Brown

    IPC分类号： G01J314

    CPC分类号： G01J3/26 ,  G01J1/4257 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/12 ,  G01J3/1804 ,  G01J3/22 ,  G01J9/02

    摘要： A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiod array and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array. Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer, and the etalon can be scanned.

    摘要翻译： 高分辨率光谱测量装置。 优选的实施例在紫外线范围内呈现非常窄的狭缝功能，并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。 来自激光的光被聚焦成漫射器，并且离开扩散器的漫射光照射标准具。 将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。 通过狭缝的光线被准直，并且准直光照射位于大约Littrow配置中的光栅，其根据波长散发光。 表示对应于所选择的标准具条纹的波长的调度光​​的一部分通过第二狭缝并由光检测器监视。 当标准具和光栅调谐到相同的精确波长时，定义狭缝功能，其极窄，例如约0.034μm（FWHM）和约0.091μm（95％积分）。 通过激光束的引导部分进入绝缘体并且在包括单色器狭缝波长的范围内扫描激光波长，可以非常精确地测量激光束的带宽。 在第二实施例中，第二狭缝和光检测器由光电二极管阵列替代，并且通过分析来自光电二极管阵列的一组扫描数据来确定激光束的带宽。 或者，激光波长可以固定在光栅光谱仪的光谱范围附近，可以扫描标准具。