摘要:
A semiconductor package may include a semiconductor chip, a molding layer which molds the semiconductor chip, and an interconnection which extends crossing an interface between the semiconductor chip and the molding layer and connects the semiconductor chip to an outside, wherein a shape of the interconnection is changed along the extended length thereof. According to the present invention, even if a mechanical stress or a thermal stress is applied to an interconnection, a crack does not occur in the interconnection or the interconnection is not disconnected. Therefore, a reliability of the semiconductor package is improved.
摘要:
A semiconductor chip package including a semiconductor chip including a first surface having bonding pads, a second surface facing the first surface, and sidewalls; a molding extension part surrounding the second surface and the sidewalls of the semiconductor chip; redistribution patterns extending from the bonding pads over the molding extension part, and electrically connected to the bonding pads; bump solder balls on the redistribution patterns; and a molding layer configured to cover the first surface of the semiconductor chip and the molding extension part, while exposing portions of each of the bump solder balls. The molding layer has concave meniscus surfaces between the bump solder balls adjacent to each other.
摘要:
In one embodiment, a semiconductor package disclosed herein can be generally characterized as including a resin substrate having a first recess, a first interconnection disposed on a surface of the first recess, a first semiconductor chip disposed in the first recess, and an underfill resin layer substantially filling the first recess and covering a side surface of the first semiconductor chip. The first semiconductor chip is electrically connected to the first interconnection.
摘要:
In one embodiment, a semiconductor package disclosed herein can be generally characterized as including a resin substrate having a first recess, a first interconnection disposed on a surface of the first recess, a first semiconductor chip disposed in the first recess, and an underfill resin layer substantially filling the first recess and covering a side surface of the first semiconductor chip. The first semiconductor chip is electrically connected to the first interconnection.
摘要:
A semiconductor package using a chip-embedded interposer substrate is provided. The chip-embedded interposer substrate includes a chip including a plurality of chip pads; a substrate having the chip mounted thereon and including a plurality of redistribution pads for redistributing the chip pads; bonding wires for connecting the chip pads to the redistribution pads; a protective layer having via holes for exposing the redistribution pads while burying the chip and the substrate; and vias connected to the redistribution pads through the via holes. The semiconductor package including chips of various sizes is fabricated using the chip-embedded interposer substrate.
摘要:
A device includes a base substrate, a package including an encapsulated die, the package at least partially embedded in the base substrate, and a wiring portion on the package and extending across at least a portion of the base substrate adjacent to the package.
摘要:
A flip-chip assembly comprises a semiconductor chip, a substrate, a first buffer layer, a second buffer layer and a conductive bump. The semiconductor chip includes a first region and a second region adjacent to the first region. The substrate is disposed under the semiconductor chip. The first buffer layer is disposed between the first region of the semiconductor chip and the substrate. The second buffer layer is disposed between the second region of the semiconductor chip and the substrate. The conductive bump is formed through the second buffer layer and electrically connects the semiconductor chip to the substrate.
摘要:
A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.
摘要:
Example embodiments relate to semiconductor packages and methods of forming the same. A semiconductor package according to example embodiments may include a printed circuit board (PCB), a first semiconductor chip mounted on the PCB, and a chip package mounted on the first semiconductor chip. The chip package may be in direct contact with the first semiconductor chip.
摘要:
A semiconductor package includes a first package substrate, a first semiconductor chip disposed on the first package substrate, the semiconductor chip including first through hole vias, and a chip package disposed on the first semiconductor chip, the chip package including a second package substrate and a second semiconductor chip disposed on the second package substrate, wherein a first conductive terminal is disposed on a first surface of the semiconductor chip and a second conductive terminal is disposed on a first surface of the second package substrate, the first conductive terminal disposed on the second conductive terminal.