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    Semiconductor device and method of forming conductive TSV with insulating annular ring
    4.
    发明授权
    Semiconductor device and method of forming conductive TSV with insulating annular ring 有权
    用绝缘环形成导电TSV的半导体器件和方法

    公开(公告)号：US08349735B2

    公开(公告)日：2013-01-08

    申请号：US12887811

    申请日：2010-09-22

    申请人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

    发明人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

    IPC分类号： H01L21/44

    CPC分类号： H01L23/5384 ,  H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014

    摘要： A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.

    摘要翻译： 半导体晶片具有在晶片的有效表面上形成的绝缘层。 在绝缘层上形成导电层。 第一通孔从半导体晶片的背面通过半导体晶片和绝缘层形成到导电层。 导电材料沉积在第一通孔中以形成导电TSV。 可以在第一通孔中沉积绝缘材料，以在导电通孔内形成绝缘芯。 在形成导电TSV之后，通过半导体晶片和绝缘层从导电TSV周围形成第二通孔，从半导体晶片的背表面到导电层。 绝缘材料沉积在第二通孔中以形成绝缘环形环。 导电通孔可以凹入半导体管芯的表面内或延伸到半导体管芯的表面之上。

    Semiconductor device and method of forming conductive TSV with insulating annular ring
    7.
    发明申请
    Semiconductor device and method of forming conductive TSV with insulating annular ring 有权
    用绝缘环形成导电TSV的半导体器件和方法

    公开(公告)号：US20120068313A1

    公开(公告)日：2012-03-22

    申请号：US12887811

    申请日：2010-09-22

    申请人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

    发明人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L23/5384 ,  H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014

    摘要： A semiconductor wafer has an insulating layer formed over an active surface of the wafer. A conductive layer is formed over the insulating layer. A first via is formed from a back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. A conductive material is deposited in the first via to form a conductive TSV. An insulating material can be deposited in the first via to form an insulating core within the conductive via. After forming the conductive TSV, a second via is formed around the conductive TSV from the back surface of the semiconductor wafer through the semiconductor wafer and insulating layer to the conductive layer. An insulating material is deposited in the second via to form an insulating annular ring. The conductive via can be recessed within or extend above a surface of the semiconductor die.

    摘要翻译： 半导体晶片具有在晶片的有效表面上形成的绝缘层。 在绝缘层上形成导电层。 第一通孔从半导体晶片的背面通过半导体晶片和绝缘层形成到导电层。 导电材料沉积在第一通孔中以形成导电TSV。 可以在第一通孔中沉积绝缘材料，以在导电通孔内形成绝缘芯。 在形成导电TSV之后，通过半导体晶片和绝缘层从导电TSV周围形成第二通孔，从半导体晶片的背表面到导电层。 绝缘材料沉积在第二通孔中以形成绝缘环形环。 导电通孔可以凹入半导体管芯的表面内或延伸到半导体管芯的表面之上。