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    Reduced electromigration and stressed induced migration of copper wires by surface coating
    2.
    发明授权
    Reduced electromigration and stressed induced migration of copper wires by surface coating 有权
    通过表面涂层减少电迁移和应力诱导的铜线迁移

    公开(公告)号：US07468320B2

    公开(公告)日：2008-12-23

    申请号：US11183773

    申请日：2005-07-19

    申请人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    发明人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76864 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing. We have used electroless metal coatings, such as CoWP, CoSnP and Pd, to illustrate significant reliability benefits, although chemical vapor deposition (CVD) of metals or metal forming compounds can be employed.

    摘要翻译： 本发明的想法是在沉积层间电介质之前，通过1-20nm厚的金属层将芯片上互连（BEOL）布线中的图案化Cu导线的自由表面涂覆。 该涂层足够薄，以便消除对通过抛光进行附加平面化的需要，同时提供了防止氧化和表面或Cu的扩散的保护，这已经被本发明人鉴定为导致金属线路故障的主要贡献者通过电迁移和热 压力消除。 此外，金属层增加了Cu和电介质之间的粘合强度，从而进一步增加寿命并且有助于工艺产量。 自由表面是在镶嵌工艺中的CMP（化学机械抛光）或通过图形化Cu布线的干蚀刻工艺的直接结果。 提出通过选择性方法将金属覆盖层沉积到Cu上以最小化进一步的加工。 尽管可以使用金属或金属形成化合物的化学气相沉积（CVD），但我们已经使用了无电金属涂层，例如CoWP，CoSnP和Pd来说明显着的可靠性优点。

    Electroless metal adhesion to organic dielectric material with phase separated morphology
    5.
    发明授权
    Electroless metal adhesion to organic dielectric material with phase separated morphology 失效
    无机金属与相分离形态的有机介电材料粘合

    公开(公告)号：US5310580A

    公开(公告)日：1994-05-10

    申请号：US874665

    申请日：1992-04-27

    申请人： Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Judith M. Roldan ,  Lubomyr T. Romankiw ,  Carlos J. Sambucetti ,  Ravi Saraf

    发明人： Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Judith M. Roldan ,  Lubomyr T. Romankiw ,  Carlos J. Sambucetti ,  Ravi Saraf

    IPC分类号： B05D1/34 ,  C23C18/20 ,  H05K3/18 ,  H05K3/38 ,  B05D2/06

    CPC分类号： H05K3/387 ,  B05D1/34 ,  C23C18/20 ,  C23C18/2033 ,  C23C18/208 ,  C23C18/24 ,  C23C18/30 ,  H05K2201/0154 ,  H05K2201/0212 ,  H05K2203/0759 ,  H05K2203/0773 ,  H05K2203/0793 ,  H05K3/181 ,  H05K3/381

    摘要： Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.

    摘要翻译： 沉积在具有相分离形态的有机电介质层上的化学金属的改善的粘附通过自发形成形态和形貌上粗糙的表面来实现。 在一个实施方案中，可以将不同顺序的两相分离的相同聚合物的极性溶剂和两种聚合物前体的三元溶液在基材上成膜并加热形成不同阶数的两相以自发产生粗糙表面。 在暴露于碱性溶液时，以比另一相更快的速率蚀刻一相。 在粗糙表面上的金属的接种和无电沉积导致金属对电介质层的附着力提高。 在第二个实施方案中，将极性溶剂，接种剂，可以在两相中分离的相同聚合物的两种聚合物前体的四元溶液浇铸在基材上的薄膜中，并加热形成三相。 固化前体由于相分离而导致表面粗糙化。 暴露在碱性溶液中时，以更快的速率蚀刻聚合物相之一并同时打开接种胶体。 粗糙表面用光致抗蚀剂涂覆，曝光和显影。 随后的无电金属沉积导致金属与电介质层粘附性的改善。 该方法适用于将化学镀铜选择性沉积到聚酰亚胺层上。

    Depositing a conductive metal onto a substrate
    6.
    发明授权
    Depositing a conductive metal onto a substrate 失效
    将导电金属沉积到基底上

    公开(公告)号：US5509557A

    公开(公告)日：1996-04-23

    申请号：US184930

    申请日：1994-01-24

    申请人： Lisa J. Jimarez ,  William H. Lawrence ,  Voya R. Markovich ,  Robert J. Owen ,  Carlos J. Sambucetti

    发明人： Lisa J. Jimarez ,  William H. Lawrence ,  Voya R. Markovich ,  Robert J. Owen ,  Carlos J. Sambucetti

    IPC分类号： C23C18/28 ,  C23C18/22 ,  C23C18/31 ,  H05K3/18 ,  H05K3/38 ,  B05D3/04 ,  C23F1/00

    CPC分类号： H05K3/38 ,  C23C18/22 ,  H05K3/381 ,  H05K2203/1105 ,  H05K2203/1152 ,  H05K3/181

    摘要： A method for depositing a conductive metal onto a dielectric substrate is provided. The method includes obtaining a metal sheet having a roughened surface that has the following parameters:R.sub.a =0.05-0.08 mil,R.sub.max =0.20-0.55 mil,S.sub.m =1.00-3.00 mil,R.sub.p =0.20-0.35 mil, andsurface area=0.90-1.20 square milswherein R.sub.a is the average roughness and the arithmetic mean of the departures from horizontal mean line profile;R.sub.max is the maximum peak-to-valley height;S.sub.m is the mean spacing between high spots at the mean line;R.sub.p is the maximum profile height from the mean line; andsurface area is the area under the surface profile from each measurement using a Talysurf S-120 profilometer;The sheet is laminated to the dielectric substrate surface by pressing the roughened surface of the metal sheet against the surface of the substrate and then removed from the substrate. The substrate surface is seeded to render it active for electroless plating thereon; and then a metal from an electroless plating bath is plated thereon.In another method, the dielectric substrate is seeded to render it active for electroless plating thereon. A metal is then plated thereon from an electroless plating bath. The plated metal is subjected to temperature of at least about 100 .degree. C. for a time sufficient to increase the adhesion of the metal to the substrate.

    摘要翻译： 提供了一种在电介质基片上沉积导电金属的方法。 该方法包括获得具有以下参数的粗糙表面的金属片：Ra = 0.05-0.08密耳，Rmax = 0.20-0.55密耳，Sm = 1.00-3.00密耳，Rp = 0.20-0.35密耳，表面积= 0.90 -1.20平方米，其中Ra是平均粗糙度和离开水平平均线轮廓的算术平均值; Rmax是最大峰谷高度; Sm是平均线高点之间的平均间距; Rp是距平均线的最大轮廓高度; 表面积是使用Talysurf S-120轮廓仪进行每次测量的表面轮廓下面积; 通过将金属片的粗糙表面压在衬底的表面上，然后从衬底上去除，将片层压到电介质衬底表面上。 将基材表面接种以使其活性以在其上进行无电镀; 然后将来自化学镀浴的金属镀在其上。 在另一种方法中，将电介质基底接种以使其在其上进行无电镀。 然后将金属从化学镀浴镀在其上。 将电镀金属经受至少约100℃的温度足以增加金属与基底的粘合力的时间。

    Method for conditioning a surface of a dielectric substrate for electroless plating
    10.
    发明授权
    Method for conditioning a surface of a dielectric substrate for electroless plating 失效
    用于调理用于无电镀的电介质基板的表面的方法

    公开(公告)号：US4554182A

    公开(公告)日：1985-11-19

    申请号：US696879

    申请日：1985-01-31

    申请人： James R. Bupp ,  Gary K. Lemon ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    发明人： James R. Bupp ,  Gary K. Lemon ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    IPC分类号： C23C18/28 ,  H05K3/38 ,  C23C18/24

    CPC分类号： H05K3/381 ,  C23C18/28

    摘要： Method for electroless plating metals, such as copper, onto non-conductive substrate surfaces. The method comprises bringing the surfaces into contact with an aqueous composition containing H.sub.2 SO.sub.4 and a multifunctional cationic copolymer containing at least two available cationic moieties and then activating the surfaces by treating them with a colloidal solution containing palladium chloride, stannous chloride and HCl.The inventive method is particularly useful in processes for producing metal circuits on substrates of glass, thermoplastics and thermosetting resins, such as epoxy cards and boards. The method is also applied in reworking substrates having already undergone copper plating and having been rejected due to failures.

    摘要翻译： 无电镀金属（如铜）在非导电基材表面上的方法。 该方法包括使表面与含有H 2 SO 4的水性组合物和含有至少两种可得到的阳离子部分的多官能阳离子共聚物接触，然后通过用含氯化钯，氯化亚锡和HCl的胶体溶液处理表面来活化表面。 本发明的方法特别适用于在玻璃，热塑性塑料和热固性树脂（例如环氧树脂卡和板）的基底上生产金属电路的方法。 该方法也适用于已经经过镀铜并由于故障而被拒绝的基板。