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    High performance metal cone contact
    2.
    发明授权
    High performance metal cone contact 失效
    高性能金属锥接触

    公开(公告)号：US5190463A

    公开(公告)日：1993-03-02

    申请号：US797575

    申请日：1991-11-25

    申请人： Madhav Datta ,  David E. King ,  Alan D. Knight ,  Carlos J. Sambucetti

    发明人： Madhav Datta ,  David E. King ,  Alan D. Knight ,  Carlos J. Sambucetti

    IPC分类号： H01H1/06 ,  H01L21/60 ,  H01R12/04 ,  H01R12/32 ,  H01R13/03 ,  H01R13/22 ,  H01R43/16 ,  H05K1/11 ,  H05K3/06 ,  H05K3/07 ,  H05K3/24 ,  H05K3/38 ,  H05K3/40

    CPC分类号： H05K3/07 ,  H01R13/22 ,  H05K3/4007 ,  H01L2924/0002 ,  H01R13/03 ,  H01R43/16 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2203/0369 ,  H05K3/064 ,  H05K3/383 ,  Y10T29/49222

    摘要： An electrical interconnection, which includes a method for fabricating the device, is disclosed. The interconnection comprises two contact surfaces, on at least one of which is disposed at least one solid metal conical projection in predetermined dimension and location. Rather than necessarily being permanently cojoined, the contact surfaces are attachable and detachable when desired. The conical projections on one contact surface make ohmic contact, either by wiping with an intermeshing like structure on a second contact surface or by contacting a second contact surface which is a substantially flat contact pad. An interconnection, in this invention, is the combination of at least one contact having individual conical projections and another contact, optionally having individual conical projections. The conical projections are formed in metal by electrochemical machining in neutral salt solution, optionally in a continuous foil. The conical projections are also optionally formed on the head of a contact pin.

    摘要翻译： 公开了一种包括制造该装置的方法的电互连。 互连包括两个接触表面，其中至少一个接触表面设置有至少一个预定尺寸和位置的固体金属锥形突起。 不必一定地永久地共同接合，当需要时，接触表面是可附接的和可拆卸的。 一个接触表面上的锥形突起通过在第二接触表面上用相互啮合的结构擦拭或者通过接触作为基本上平坦的接触垫的第二接触表面来进行欧姆接触。 在本发明中的互连是至少一个具有单独的锥形突起的接触件和另一个接触件的组合，可选地具有单独的锥形突出部。 锥形凸起通过在中性盐溶液中的电化学机械加工形成金属，任选地在连续的箔中。 锥形突起也可选地形成在接触销的头部上。

    Method for providing an electroless copper plating bath in the take mode
    4.
    发明授权
    Method for providing an electroless copper plating bath in the take mode 失效
    在取样模式下提供化学镀铜浴的方法

    公开(公告)号：US4534797A

    公开(公告)日：1985-08-13

    申请号：US567723

    申请日：1984-01-03

    申请人： David E. King ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    发明人： David E. King ,  Voya Markovich ,  Carlos J. Sambucetti ,  Stephen L. Tisdale ,  Donna J. Trevitt

    IPC分类号： H05K3/18 ,  C23C18/40 ,  C23C3/02

    CPC分类号： C23C18/40

    摘要： An electroless copper plating bath which is in the take mode is provided by determining the amount in the bath of at least four of the components selected from the group of oxygen, reducing agent, cyanide salt, cupric salt, and complexing agent; solving the equation:R=(CABD)/Ewherin C is the concentration of cupric salt, A is the concentration of reducing agent, B is the concentration of oxygen, D is the concentration of cyanide salt, E is the concentration of complexing agent, and R is a unitless number.The bath is provided with quantities of the above ingredients so that R in the equation is between about 5 and about 15.

    摘要翻译： 通过确定浴中至少四种选自氧，还原剂，氰化物盐，铜盐和络合剂的组分中的量来提供处于取样模式的化学镀铜浴; 求解方程：R =（CABD）/ E，C是铜盐的浓度，A是还原剂的浓度，B是氧的浓度，D是氰化物盐的浓度，E是络合剂的浓度 ，R是无单位数。 浴中提供了上述成分的数量，使得方程式中的R为约5至约15。

    Reduced electromigration and stressed induced migration of copper wires by surface coating
    5.
    发明授权
    Reduced electromigration and stressed induced migration of copper wires by surface coating 有权
    通过表面涂层减少电迁移和应力诱导的铜线迁移

    公开(公告)号：US07468320B2

    公开(公告)日：2008-12-23

    申请号：US11183773

    申请日：2005-07-19

    申请人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    发明人： Chao-Kun Hu ,  Robert Rosenberg ,  Judith M. Rubino ,  Carlos J. Sambucetti ,  Anthony K. Stamper

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76864 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The idea of the invention is to coat the free surface of patterned Cu conducting lines in on-chip interconnections (BEOL) wiring by a 1-20 nm thick metal layer prior to deposition of the interlevel dielectric. This coating is sufficiently thin so as to obviate the need for additional planarization by polishing, while providing protection against oxidation and surface, or interface, diffusion of Cu which has been identified by the inventors as the leading contributor to metal line failure by electromigration and thermal stress voiding. Also, the metal layer increases the adhesion strength between the Cu and dielectric so as to further increase lifetime and facilitate process yield. The free surface is a direct result of the CMP (chemical mechanical polishing) in a damascene process or in a dry etching process by which Cu wiring is patterned. It is proposed that the metal capping layer be deposited by a selective process onto the Cu to minimize further processing. We have used electroless metal coatings, such as CoWP, CoSnP and Pd, to illustrate significant reliability benefits, although chemical vapor deposition (CVD) of metals or metal forming compounds can be employed.

    摘要翻译： 本发明的想法是在沉积层间电介质之前，通过1-20nm厚的金属层将芯片上互连（BEOL）布线中的图案化Cu导线的自由表面涂覆。 该涂层足够薄，以便消除对通过抛光进行附加平面化的需要，同时提供了防止氧化和表面或Cu的扩散的保护，这已经被本发明人鉴定为导致金属线路故障的主要贡献者通过电迁移和热 压力消除。 此外，金属层增加了Cu和电介质之间的粘合强度，从而进一步增加寿命并且有助于工艺产量。 自由表面是在镶嵌工艺中的CMP（化学机械抛光）或通过图形化Cu布线的干蚀刻工艺的直接结果。 提出通过选择性方法将金属覆盖层沉积到Cu上以最小化进一步的加工。 尽管可以使用金属或金属形成化合物的化学气相沉积（CVD），但我们已经使用了无电金属涂层，例如CoWP，CoSnP和Pd来说明显着的可靠性优点。

    Electroless metal adhesion to organic dielectric material with phase separated morphology
    8.
    发明授权
    Electroless metal adhesion to organic dielectric material with phase separated morphology 失效
    无机金属与相分离形态的有机介电材料粘合

    公开(公告)号：US5310580A

    公开(公告)日：1994-05-10

    申请号：US874665

    申请日：1992-04-27

    申请人： Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Judith M. Roldan ,  Lubomyr T. Romankiw ,  Carlos J. Sambucetti ,  Ravi Saraf

    发明人： Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Judith M. Roldan ,  Lubomyr T. Romankiw ,  Carlos J. Sambucetti ,  Ravi Saraf

    IPC分类号： B05D1/34 ,  C23C18/20 ,  H05K3/18 ,  H05K3/38 ,  B05D2/06

    CPC分类号： H05K3/387 ,  B05D1/34 ,  C23C18/20 ,  C23C18/2033 ,  C23C18/208 ,  C23C18/24 ,  C23C18/30 ,  H05K2201/0154 ,  H05K2201/0212 ,  H05K2203/0759 ,  H05K2203/0773 ,  H05K2203/0793 ,  H05K3/181 ,  H05K3/381

    摘要： Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.

    摘要翻译： 沉积在具有相分离形态的有机电介质层上的化学金属的改善的粘附通过自发形成形态和形貌上粗糙的表面来实现。 在一个实施方案中，可以将不同顺序的两相分离的相同聚合物的极性溶剂和两种聚合物前体的三元溶液在基材上成膜并加热形成不同阶数的两相以自发产生粗糙表面。 在暴露于碱性溶液时，以比另一相更快的速率蚀刻一相。 在粗糙表面上的金属的接种和无电沉积导致金属对电介质层的附着力提高。 在第二个实施方案中，将极性溶剂，接种剂，可以在两相中分离的相同聚合物的两种聚合物前体的四元溶液浇铸在基材上的薄膜中，并加热形成三相。 固化前体由于相分离而导致表面粗糙化。 暴露在碱性溶液中时，以更快的速率蚀刻聚合物相之一并同时打开接种胶体。 粗糙表面用光致抗蚀剂涂覆，曝光和显影。 随后的无电金属沉积导致金属与电介质层粘附性的改善。 该方法适用于将化学镀铜选择性沉积到聚酰亚胺层上。

    Depositing a conductive metal onto a substrate
    9.
    发明授权
    Depositing a conductive metal onto a substrate 失效
    将导电金属沉积到基底上

    公开(公告)号：US5509557A

    公开(公告)日：1996-04-23

    申请号：US184930

    申请日：1994-01-24

    申请人： Lisa J. Jimarez ,  William H. Lawrence ,  Voya R. Markovich ,  Robert J. Owen ,  Carlos J. Sambucetti

    发明人： Lisa J. Jimarez ,  William H. Lawrence ,  Voya R. Markovich ,  Robert J. Owen ,  Carlos J. Sambucetti

    IPC分类号： C23C18/28 ,  C23C18/22 ,  C23C18/31 ,  H05K3/18 ,  H05K3/38 ,  B05D3/04 ,  C23F1/00

    CPC分类号： H05K3/38 ,  C23C18/22 ,  H05K3/381 ,  H05K2203/1105 ,  H05K2203/1152 ,  H05K3/181

    摘要： A method for depositing a conductive metal onto a dielectric substrate is provided. The method includes obtaining a metal sheet having a roughened surface that has the following parameters:R.sub.a =0.05-0.08 mil,R.sub.max =0.20-0.55 mil,S.sub.m =1.00-3.00 mil,R.sub.p =0.20-0.35 mil, andsurface area=0.90-1.20 square milswherein R.sub.a is the average roughness and the arithmetic mean of the departures from horizontal mean line profile;R.sub.max is the maximum peak-to-valley height;S.sub.m is the mean spacing between high spots at the mean line;R.sub.p is the maximum profile height from the mean line; andsurface area is the area under the surface profile from each measurement using a Talysurf S-120 profilometer;The sheet is laminated to the dielectric substrate surface by pressing the roughened surface of the metal sheet against the surface of the substrate and then removed from the substrate. The substrate surface is seeded to render it active for electroless plating thereon; and then a metal from an electroless plating bath is plated thereon.In another method, the dielectric substrate is seeded to render it active for electroless plating thereon. A metal is then plated thereon from an electroless plating bath. The plated metal is subjected to temperature of at least about 100 .degree. C. for a time sufficient to increase the adhesion of the metal to the substrate.

    摘要翻译： 提供了一种在电介质基片上沉积导电金属的方法。 该方法包括获得具有以下参数的粗糙表面的金属片：Ra = 0.05-0.08密耳，Rmax = 0.20-0.55密耳，Sm = 1.00-3.00密耳，Rp = 0.20-0.35密耳，表面积= 0.90 -1.20平方米，其中Ra是平均粗糙度和离开水平平均线轮廓的算术平均值; Rmax是最大峰谷高度; Sm是平均线高点之间的平均间距; Rp是距平均线的最大轮廓高度; 表面积是使用Talysurf S-120轮廓仪进行每次测量的表面轮廓下面积; 通过将金属片的粗糙表面压在衬底的表面上，然后从衬底上去除，将片层压到电介质衬底表面上。 将基材表面接种以使其活性以在其上进行无电镀; 然后将来自化学镀浴的金属镀在其上。 在另一种方法中，将电介质基底接种以使其在其上进行无电镀。 然后将金属从化学镀浴镀在其上。 将电镀金属经受至少约100℃的温度足以增加金属与基底的粘合力的时间。