公开(公告)号：US20100041833A1

公开(公告)日：2010-02-18

申请号：US12536071

申请日：2009-08-05

申请人： Satoru Wakiyama ,  Yasuhito Inagaki

发明人： Satoru Wakiyama ,  Yasuhito Inagaki

IPC分类号： C08L33/20 ,  C08F20/44 ,  C08F112/08 ,  C08F118/14 ,  C08L33/04 ,  C08L25/06

CPC分类号： C08G64/42 ,  C08F8/44 ,  C08F2800/10 ,  C08L69/00 ,  C09K3/16 ,  C08F8/36 ,  C08F112/08 ,  C08F212/10 ,  C08L101/02

摘要： An antistatic agent for a thermoplastic resin is provided and includes a sulfonate group introduced into a surface layer part of an aromatic ring-containing thermoplastic resin.

摘要翻译： 提供了一种用于热塑性树脂的抗静电剂，并且包括引入含芳香环的热塑性树脂的表面层部分中的磺酸盐基团。

公开(公告)号：US07910673B2

公开(公告)日：2011-03-22

申请号：US12536071

申请日：2009-08-05

申请人： Satoru Wakiyama ,  Yasuhito Inagaki

发明人： Satoru Wakiyama ,  Yasuhito Inagaki

IPC分类号： C08F12/30

CPC分类号： C08G64/42 ,  C08F8/44 ,  C08F2800/10 ,  C08L69/00 ,  C09K3/16 ,  C08F8/36 ,  C08F112/08 ,  C08F212/10 ,  C08L101/02

摘要： An antistatic agent for a thermoplastic resin is provided and includes a sulfonate group introduced into a surface layer part of an aromatic ring-containing thermoplastic resin.

摘要翻译： 提供了一种用于热塑性树脂的抗静电剂，并且包括引入含芳香环的热塑性树脂的表面层部分中的磺酸盐基团。

公开(公告)号：US08773583B2

公开(公告)日：2014-07-08

申请号：US13086830

申请日：2011-04-14

申请人： Satoru Wakiyama ,  Hiroshi Ozaki

发明人： Satoru Wakiyama ,  Hiroshi Ozaki

IPC分类号： H04N5/225

CPC分类号： H01L27/14636 ,  H01L21/56 ,  H01L21/563 ,  H01L23/31 ,  H01L24/05 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83104 ,  H01L2224/83365 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

摘要翻译： 本发明公开了一种半导体器件，包括：具有电子电路部分的第一半导体芯片和在其一个表面上形成的第一连接部分; 具有在其一个表面上形成的第二连接部分的第二半导体芯片，所述第二半导体芯片安装在所述第一半导体芯片上，所述第一和第二连接部分通过凸块相互连接; 形成为在所述第二半导体芯片的外缘的一部分上填充所述第一和第二半导体芯片之间的间隙的坝，所述外边缘的一部分位于所述电子电路部的形成区域的一侧; 并且填充到间隙中的底部填充树脂层，树脂层从第二半导体芯片的外边缘突出到电子电路部分的侧面被大坝阻止。

公开(公告)号：US07863741B2

公开(公告)日：2011-01-04

申请号：US12078893

申请日：2008-04-08

申请人： Hiroshi Ozaki ,  Satoru Wakiyama

发明人： Hiroshi Ozaki ,  Satoru Wakiyama

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2224/16 ,  H01L2224/75 ,  H01L2224/75301 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode. The pad electrode is covered with a nickel layer. The bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer, and the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.

摘要翻译： 形成有凸点的半导体芯片，使得该凸块对应于焊盘电极。 焊盘电极被镍层覆盖。 凸块具有设置在铟层和镍层之间的铟层和中间金属化合物层，并且通过使铟层和含有不少于0.5原子％的铜原子的铜层合金化而形成中间金属化合物层，以及 相对于铟层中的铟原子不超过5原子％。

公开(公告)号：US08841783B2

公开(公告)日：2014-09-23

申请号：US13312565

申请日：2011-12-06

申请人： Satoru Wakiyama

发明人： Satoru Wakiyama

IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11015 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/14131 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/26135 ,  H01L2224/26145 ,  H01L2224/26165 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48 ,  H01L2224/73104 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83007 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.

摘要翻译： 半导体器件包括半导体元件; 形成在半导体元件上的焊盘电极; 形成在半导体元件上的对准标记; 形成在焊盘电极上的连接电极; 和形成为覆盖连接电极的底部填充树脂。 来自半导体元件的对准标记的高度大于连接电极的高度。

公开(公告)号：US20120313236A1

公开(公告)日：2012-12-13

申请号：US13487163

申请日：2012-06-02

申请人： Satoru Wakiyama ,  Masaki Minami

发明人： Satoru Wakiyama ,  Masaki Minami

IPC分类号： H01L23/48 ,  H01L21/02

CPC分类号： H01L25/50 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/1464 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/08147 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/14131 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81011 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83862 ,  H01L2224/9221 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a semiconductor element, a connection electrode formed on the semiconductor element, and alignment marks formed on the semiconductor element. At least one of the alignment marks is made of a magnetic material.

摘要翻译： 半导体器件包括半导体元件，形成在半导体元件上的连接电极和形成在半导体元件上的对准标记。 对准标记中的至少一个由磁性材料制成。

公开(公告)号：US20050189634A1

公开(公告)日：2005-09-01

申请号：US11063610

申请日：2005-02-24

申请人： Satoru Wakiyama ,  Shinji Baba

发明人： Satoru Wakiyama ,  Shinji Baba

IPC分类号： H01L21/98 ,  H01L23/02 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18

CPC分类号： H01L25/50 ,  H01L23/3128 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/1005 ,  H01L2924/15311

摘要： A method of manufacturing a semiconductor module includes the steps of producing semiconductor devices of substantially the same thickness by forming respective resin portions covering respective semiconductor elements, mounting the semiconductor devices on a module substrate, covering inner bumps of the semiconductor devices with an encapsulating resin, providing a heat radiation plate over the semiconductor devices, and providing external electrodes on the rear surface of the module substrate.

摘要翻译： 一种制造半导体模块的方法包括以下步骤：通过形成覆盖各个半导体元件的相应树脂部分来制造基本上相同厚度的半导体器件，将半导体器件安装在模块衬底上，用封装树脂覆盖半导体器件的内部凸块， 在半导体器件上提供散热板，并在模块基板的后表面上提供外部电极。

公开(公告)号：US09548290B2

公开(公告)日：2017-01-17

申请号：US13487163

申请日：2012-06-02

申请人： Satoru Wakiyama ,  Masaki Minami

发明人： Satoru Wakiyama ,  Masaki Minami

IPC分类号： H01L23/544 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L27/146

CPC分类号： H01L25/50 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/1464 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/08147 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/14131 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81011 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83862 ,  H01L2224/9221 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device includes a semiconductor element, a connection electrode formed on the semiconductor element, and alignment marks formed on the semiconductor element. At least one of the alignment marks is made of a magnetic material.

摘要翻译： 半导体器件包括半导体元件，形成在半导体元件上的连接电极和形成在半导体元件上的对准标记。 对准标记中的至少一个由磁性材料制成。

公开(公告)号：US20120153462A1

公开(公告)日：2012-06-21

申请号：US13312565

申请日：2011-12-06

申请人： Satoru Wakiyama

发明人： Satoru Wakiyama

IPC分类号： H01L23/498 ,  H01L23/52 ,  H01L21/50 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11015 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/14131 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/26135 ,  H01L2224/26145 ,  H01L2224/26165 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48 ,  H01L2224/73104 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83007 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.

摘要翻译： 半导体器件包括半导体元件; 形成在半导体元件上的焊盘电极; 形成在半导体元件上的对准标记; 形成在焊盘电极上的连接电极; 以及形成为覆盖连接电极的底部填充树脂。 来自半导体元件的对准标记的高度大于连接电极的高度。

公开(公告)号：US06982489B2

公开(公告)日：2006-01-03

申请号：US10652039

申请日：2003-09-02

申请人： Satoru Wakiyama ,  Kozo Harada

发明人： Satoru Wakiyama ,  Kozo Harada

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/36 ,  H01L23/3114 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A semiconductor device has a plurality of laminated semiconductor elements 2, and highly water-absorbing resin films 3 formed between the semiconductor elements. Here, the highly water-absorbing resin films 3 preferably contain water or a low-boiling-point organic solvent. Alternatively, the highly water-absorbing resin films may contain, or may be allowed to contain after packaging, an organic solvent having a boiling point equal to or higher than the reflow temperature of solder.

摘要翻译： 半导体器件具有多个叠层半导体元件2和形成在半导体元件之间的高吸水性树脂膜3。 这里，高吸水性树脂膜3优选含有水或低沸点有机溶剂。 或者，高吸水性树脂膜可以在包装后含有沸点等于或高于焊料回流温度的有机溶剂，或者可以含有。