专利检索 ap:"Satoru Wakiyama" 第 1 页

1.

发明授权
Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法

公开(公告)号：US08841783B2

公开(公告)日：2014-09-23

申请号：US13312565

申请日：2011-12-06

申请人： Satoru Wakiyama

发明人： Satoru Wakiyama

IPC分类号： H01L23/544 , H01L23/00 , H01L21/56 , H01L25/00 , H01L25/065

CPC分类号： H01L25/0657 , H01L21/561 , H01L21/563 , H01L23/3142 , H01L23/544 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2223/54426 , H01L2224/0345 , H01L2224/03462 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/051 , H01L2224/05568 , H01L2224/056 , H01L2224/10135 , H01L2224/10165 , H01L2224/11015 , H01L2224/11462 , H01L2224/11849 , H01L2224/13014 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13166 , H01L2224/14131 , H01L2224/14515 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/26135 , H01L2224/26145 , H01L2224/26165 , H01L2224/27334 , H01L2224/27416 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/451 , H01L2224/48 , H01L2224/73104 , H01L2224/8113 , H01L2224/81132 , H01L2224/81139 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/81815 , H01L2224/81903 , H01L2224/83007 , H01L2224/8313 , H01L2224/83132 , H01L2224/83141 , H01L2224/83191 , H01L2224/83203 , H01L2224/8385 , H01L2224/83862 , H01L2224/92 , H01L2225/06513 , H01L2225/06568 , H01L2225/06593 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00 , H01L2924/00015 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： A semiconductor device includes a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.

摘要翻译： 半导体器件包括半导体元件; 形成在半导体元件上的焊盘电极; 形成在半导体元件上的对准标记; 形成在焊盘电极上的连接电极; 和形成为覆盖连接电极的底部填充树脂。来自半导体元件的对准标记的高度大于连接电极的高度。

2.

发明申请
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法

公开(公告)号：US20120313236A1

公开(公告)日：2012-12-13

申请号：US13487163

申请日：2012-06-02

申请人： Satoru Wakiyama , Masaki Minami

发明人： Satoru Wakiyama , Masaki Minami

IPC分类号： H01L23/48 , H01L21/02

CPC分类号： H01L25/50 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L27/1464 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2224/03912 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/05573 , H01L2224/05647 , H01L2224/05666 , H01L2224/08147 , H01L2224/10135 , H01L2224/10165 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/14131 , H01L2224/27416 , H01L2224/27436 , H01L2224/73104 , H01L2224/73204 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81011 , H01L2224/8113 , H01L2224/81132 , H01L2224/81141 , H01L2224/81193 , H01L2224/8121 , H01L2224/81815 , H01L2224/83193 , H01L2224/83862 , H01L2224/9221 , H01L2225/06513 , H01L2225/06565 , H01L2225/06593 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/12043 , H01L2924/13091 , H01L2924/01074 , H01L2924/01047 , H01L2224/81 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2224/05552

摘要： A semiconductor device includes a semiconductor element, a connection electrode formed on the semiconductor element, and alignment marks formed on the semiconductor element. At least one of the alignment marks is made of a magnetic material.

摘要翻译： 半导体器件包括半导体元件，形成在半导体元件上的连接电极和形成在半导体元件上的对准标记。对准标记中的至少一个由磁性材料制成。

3.

发明授权
Antistatic agent for thermoplastic resin and antistatic resin composition 有权
标题翻译：热塑性树脂抗静电剂和抗静电树脂组合物

公开(公告)号：US07910673B2

公开(公告)日：2011-03-22

申请号：US12536071

申请日：2009-08-05

申请人： Satoru Wakiyama , Yasuhito Inagaki

发明人： Satoru Wakiyama , Yasuhito Inagaki

IPC分类号： C08F12/30

CPC分类号： C08G64/42 , C08F8/44 , C08F2800/10 , C08L69/00 , C09K3/16 , C08F8/36 , C08F112/08 , C08F212/10 , C08L101/02

摘要： An antistatic agent for a thermoplastic resin is provided and includes a sulfonate group introduced into a surface layer part of an aromatic ring-containing thermoplastic resin.

摘要翻译： 提供了一种用于热塑性树脂的抗静电剂，并且包括引入含芳香环的热塑性树脂的表面层部分中的磺酸盐基团。

4.

发明申请
Semiconductor module and method of manufacturing thereof 审中-公开
标题翻译：半导体模块及其制造方法

公开(公告)号：US20050189634A1

公开(公告)日：2005-09-01

申请号：US11063610

申请日：2005-02-24

申请人： Satoru Wakiyama , Shinji Baba

发明人： Satoru Wakiyama , Shinji Baba

IPC分类号： H01L21/98 , H01L23/02 , H01L25/065 , H01L25/10 , H01L25/18

CPC分类号： H01L25/50 , H01L23/3128 , H01L25/0655 , H01L25/105 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2225/1005 , H01L2924/15311

摘要： A method of manufacturing a semiconductor module includes the steps of producing semiconductor devices of substantially the same thickness by forming respective resin portions covering respective semiconductor elements, mounting the semiconductor devices on a module substrate, covering inner bumps of the semiconductor devices with an encapsulating resin, providing a heat radiation plate over the semiconductor devices, and providing external electrodes on the rear surface of the module substrate.

摘要翻译： 一种制造半导体模块的方法包括以下步骤：通过形成覆盖各个半导体元件的相应树脂部分来制造基本上相同厚度的半导体器件，将半导体器件安装在模块衬底上，用封装树脂覆盖半导体器件的内部凸块，在半导体器件上提供散热板，并在模块基板的后表面上提供外部电极。

5.

发明授权
Semiconductor device, method for manufacturing the same, and electronic device 有权
标题翻译：半导体装置及其制造方法以及电子装置

公开(公告)号：US08773583B2

公开(公告)日：2014-07-08

申请号：US13086830

申请日：2011-04-14

申请人： Satoru Wakiyama , Hiroshi Ozaki

发明人： Satoru Wakiyama , Hiroshi Ozaki

IPC分类号： H04N5/225

CPC分类号： H01L27/14636 , H01L21/56 , H01L21/563 , H01L23/31 , H01L24/05 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L25/0657 , H01L27/14605 , H01L27/14609 , H01L27/14618 , H01L27/14625 , H01L27/14634 , H01L27/14683 , H01L27/1469 , H01L2224/0401 , H01L2224/05571 , H01L2224/05624 , H01L2224/14515 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/26145 , H01L2224/26175 , H01L2224/27013 , H01L2224/29011 , H01L2224/29035 , H01L2224/32145 , H01L2224/32225 , H01L2224/73103 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/83051 , H01L2224/83104 , H01L2224/83365 , H01L2224/92125 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/15788 , H01L2924/00012 , H01L2224/05552 , H01L2924/00

摘要： Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

摘要翻译： 本发明公开了一种半导体器件，包括：具有电子电路部分的第一半导体芯片和在其一个表面上形成的第一连接部分; 具有在其一个表面上形成的第二连接部分的第二半导体芯片，所述第二半导体芯片安装在所述第一半导体芯片上，所述第一和第二连接部分通过凸块相互连接; 形成为在所述第二半导体芯片的外缘的一部分上填充所述第一和第二半导体芯片之间的间隙的坝，所述外边缘的一部分位于所述电子电路部的形成区域的一侧; 并且填充到间隙中的底部填充树脂层，树脂层从第二半导体芯片的外边缘突出到电子电路部分的侧面被大坝阻止。

6.

发明申请
SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS 有权

公开(公告)号：US20130043585A1

公开(公告)日：2013-02-21

申请号：US13568574

申请日：2012-08-07

申请人： Satoru WAKIYAMA , Hiroshi Ozaki

发明人： Satoru WAKIYAMA , Hiroshi Ozaki

IPC分类号： H01L23/48 , H01L21/58

CPC分类号： H01L24/81 , H01L21/563 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/50 , H01L27/14618 , H01L27/14683 , H01L2224/0401 , H01L2224/05567 , H01L2224/1134 , H01L2224/11416 , H01L2224/11436 , H01L2224/11825 , H01L2224/11848 , H01L2224/13019 , H01L2224/13076 , H01L2224/13147 , H01L2224/1319 , H01L2224/13562 , H01L2224/1357 , H01L2224/13655 , H01L2224/16238 , H01L2224/16503 , H01L2224/2919 , H01L2224/73104 , H01L2224/73204 , H01L2224/8102 , H01L2224/81193 , H01L2224/81355 , H01L2224/81411 , H01L2224/81413 , H01L2224/81805 , H01L2224/8181 , H01L2224/81815 , H01L2224/81951 , H01L2224/83104 , H01L2224/83191 , H01L2224/83862 , H01L2224/94 , H01L2225/06513 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/15321 , H01L2924/15788 , H01L2924/01083 , H01L2924/01049 , H01L2924/00012 , H01L2224/11 , H01L2224/27416 , H01L2224/27436 , H01L2224/05552 , H01L2924/00

摘要： A semiconductor apparatus, including: a semiconductor component; a Cu stud bump that is formed on the semiconductor component; and a solder bump configured to electrically connect to the Cu stud bump.

7.

发明申请
SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件

公开(公告)号：US20120126404A1

公开(公告)日：2012-05-24

申请号：US13359999

申请日：2012-01-27

申请人： Satoru WAKIYAMA , Shinji BABA

发明人： Satoru WAKIYAMA , Shinji BABA

IPC分类号： H01L23/498

CPC分类号： H01L23/36 , H01L23/3114 , H01L23/3128 , H01L23/3185 , H01L25/105 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2225/1023 , H01L2225/107 , H01L2225/1094 , H01L2924/00014 , H01L2924/01019 , H01L2924/15311 , H01L2924/1532 , H01L2924/16152 , H01L2924/16195 , H01L2924/3511 , H01L2924/00012 , H01L2924/00 , H01L2224/05599

摘要： In a semiconductor device comprising a semiconductor chip, electrodes formed on the major surface of the semiconductor chip, and a wiring board for mounting the semiconductor chip, for example, wirings for electrically connecting the wirings of the wiring board to the electrodes are provided. As the wirings, those relaxing stress generated between the semiconductor chip and the wiring board are used.

摘要翻译： 在包括半导体芯片的半导体器件中，形成在半导体芯片的主表面上的电极和用于安装半导体芯片的布线板，例如用于将布线板的布线电连接到电极的布线。作为布线，使用在半导体芯片和布线基板之间产生的松弛应力。

8.

发明授权
Semiconductor chip and manufacturing method thereof 有权
标题翻译：半导体芯片及其制造方法

公开(公告)号：US07863741B2

公开(公告)日：2011-01-04

申请号：US12078893

申请日：2008-04-08

申请人： Hiroshi Ozaki , Satoru Wakiyama

发明人： Hiroshi Ozaki , Satoru Wakiyama

IPC分类号： H01L23/48 , H01L23/52 , H01L29/40

CPC分类号： H01L23/49816 , H01L21/4853 , H01L24/03 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/11901 , H01L2224/13099 , H01L2224/13109 , H01L2224/16 , H01L2224/75 , H01L2224/75301 , H01L2224/81203 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01061 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014

摘要： A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode. The pad electrode is covered with a nickel layer. The bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer, and the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.

摘要翻译： 形成有凸点的半导体芯片，使得该凸块对应于焊盘电极。焊盘电极被镍层覆盖。凸块具有设置在铟层和镍层之间的铟层和中间金属化合物层，并且通过使铟层和含有不少于0.5原子％的铜原子的铜层合金化而形成中间金属化合物层，以及相对于铟层中的铟原子不超过5原子％。

9.

发明申请
ANTISTATIC AGENT FOR THERMOPLASTIC RESIN AND ANTISTATIC RESIN COMPOSITION 有权
标题翻译：用于热塑性树脂和抗静电树脂组合物的抗静电剂

公开(公告)号：US20100041833A1

公开(公告)日：2010-02-18

申请号：US12536071

申请日：2009-08-05

申请人： Satoru Wakiyama , Yasuhito Inagaki

发明人： Satoru Wakiyama , Yasuhito Inagaki

IPC分类号： C08L33/20 , C08F20/44 , C08F112/08 , C08F118/14 , C08L33/04 , C08L25/06

CPC分类号： C08G64/42 , C08F8/44 , C08F2800/10 , C08L69/00 , C09K3/16 , C08F8/36 , C08F112/08 , C08F212/10 , C08L101/02

摘要： An antistatic agent for a thermoplastic resin is provided and includes a sulfonate group introduced into a surface layer part of an aromatic ring-containing thermoplastic resin.

摘要翻译： 提供了一种用于热塑性树脂的抗静电剂，并且包括引入含芳香环的热塑性树脂的表面层部分中的磺酸盐基团。