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公开(公告)号：US08598464B2
公开(公告)日：2013-12-03
申请号：US12999411
申请日：2010-04-19
CPC分类号： H05K3/3463 , B23K35/262 , B23K2101/36 , B32B15/01 , C22C13/00 , H05K3/3442 , H05K2201/10992 , Y02P70/613
摘要： A solder material includes 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part of an electronic component is connected to a copper-containing electrode land of a substrate by using this solder material, a part having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound can be rapidly grown from the electrode land and the electrode part to form a strong blocking structure.
摘要翻译： 焊料材料包括1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或 选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。 当通过使用该焊料将电子部件的含铜电极部分连接到基板的含铜电极焊盘时，可以在焊料连接部分中形成具有优异的应力松弛特性的部分， Sn金属间化合物可以从电极焊盘和电极部分快速生长，形成强阻挡结构。
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公开(公告)号：US20110120769A1
公开(公告)日：2011-05-26
申请号：US12999411
申请日：2010-04-19
CPC分类号： H05K3/3463 , B23K35/262 , B23K2101/36 , B32B15/01 , C22C13/00 , H05K3/3442 , H05K2201/10992 , Y02P70/613
摘要： A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop.A solder material comprises 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part (3a) of an electronic component (3) is connected to a copper-containing electrode land (1a) of a substrate (1) by using this solder material, a part (5b) having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound (5a) can be rapidly grown from the electrode land (1a) and the electrode part (3a) to form a strong blocking structure. Thus, even in a severe temperature environment, cleavage can be prevented from generating and extending, a high thermal fatigue resistance can be attained, and occurrence of connection failure can be reduced.
摘要翻译： 提供了一种无铅焊料，其显示出高耐热疲劳性，并且能够有效地减少导致产品功能停止的连接故障的发生。 焊料材料包含1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或 选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。 当使用该焊料将电子部件（3）的含铜电极部（3a）与基板（1）的含铜电极焊盘（1a）连接时，具有优异应力的部分（5b） 可以在焊料连接部中形成松弛性，并且可以从电极接合区（1a）和电极部（3a）迅速地生长Cu-Sn金属间化合物（5a），形成强阻挡结构。 因此，即使在严酷的温度环境下，也可以防止产生和延伸的裂纹，可以获得高耐热疲劳性，并且可以降低连接故障的发生。
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3.发明申请SEMICONDUCTOR BONDING STRUCTURE BODY AND MANUFACTURING METHOD OF SEMICONDUCTOR BONDING STRUCTURE BODY 有权半导体结合体结构体的半导体结合体和半导体结合体的制造方法公开(公告)号：US20130241069A1
公开(公告)日：2013-09-19
申请号：US13823463
申请日：2011-10-17
IPC分类号： H01L23/00
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译： 一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层 半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层， 类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。
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公开(公告)号：US08421246B2
公开(公告)日：2013-04-16
申请号：US12864826
申请日：2009-05-22
IPC分类号： H01L29/43
CPC分类号： B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
摘要： A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
摘要翻译： 接合结构将包括在电子部件中的电子元件12与包括在该电子部件中的电极14连接。 接头结构包括焊料层，其含有0.2〜6重量％的铜，0.02〜0.2重量％的锗和93.8〜99.78重量％的铋，设置在焊料层和电极之间的镍层，以及 设置在镍层和焊料层之间的阻挡层。 这里，在电子元件和电极通过焊料层接合之后，阻挡层形成为具有0.5至4.5μm的平均厚度。
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5.发明申请公开(公告)号：US20110108996A1
公开(公告)日：2011-05-12
申请号：US13003024
申请日：2010-06-17
CPC分类号： C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要翻译： 本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。 由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。 含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。
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公开(公告)号：US20100301481A1
公开(公告)日：2010-12-02
申请号：US12864826
申请日：2009-05-22
IPC分类号： H01L23/532
CPC分类号： B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
摘要： A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
摘要翻译： 接合结构将包括在电子部件中的电子元件12与包括在该电子部件中的电极14连接。 接头结构包括焊料层，其含有0.2〜6重量％的铜，0.02〜0.2重量％的锗和93.8〜99.78重量％的铋，设置在焊料层和电极之间的镍层，以及 设置在镍层和焊料层之间的阻挡层。 这里，在电子元件和电极通过焊料层接合之后，阻挡层形成为具有0.5至4.5μm的平均厚度。
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公开(公告)号：US08691377B2
公开(公告)日：2014-04-08
申请号：US13259009
申请日：2010-04-22
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译： 本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料 第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。 在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％ 中心部分。
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公开(公告)号：US08268718B2
公开(公告)日：2012-09-18
申请号：US13007693
申请日：2011-01-17
IPC分类号： H01L21/44
CPC分类号： H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要翻译： 一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上 加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含有Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。
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公开(公告)号：US20120018890A1
公开(公告)日：2012-01-26
申请号：US13259009
申请日：2010-04-22
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译： 本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料 第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。 在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％ 中心部分。
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10.发明授权公开(公告)号：US08810035B2
公开(公告)日：2014-08-19
申请号：US13823463
申请日：2011-10-17
IPC分类号： H01L23/00 , B23K35/26 , H01L21/56 , B23K35/30 , C22C5/02 , C22C13/00 , C22C5/06 , B23K35/02 , B23K1/00 , C22C9/00 , C22C1/04
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译： 一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层 半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层， 类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。
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