Memory subsystem operated in synchronism with a clock
    3.
    发明授权
    Memory subsystem operated in synchronism with a clock 失效
    内存子系统与时钟同步运行

    公开(公告)号:US06397312B1

    公开(公告)日:2002-05-28

    申请号:US08970086

    申请日:1997-11-13

    IPC分类号: G06F1200

    CPC分类号: G06F13/4243

    摘要: A memory system having a simple configuration capable of high-speed data transmission is disclosed. Data is output from a controller or a memory in synchronism with a clock or a data strobe signal. The clock or the data strobe signal is transmitted by a clock signal line or a data strobe signal line, respectively, arranged in parallel to a data signal line. A delay circuit delays by a predetermined time the signals transmitted through the clock signal line or the data strobe signal line. The clock or the data strobe signal thus assumes a phase suitable for retrieval at the destination, so that the data signal can be retrieved directly by means of the received clock or the received data strobe signal.

    摘要翻译: 公开了一种具有能够进行高速数据传输的简单配置的存储器系统。 与时钟或数据选通信号同步地从控制器或存储器输出数据。 时钟或数据选通信号分别通过与数据信号线并联布置的时钟信号线或数据选通信号线来发送。 延迟电路在预定时间内延迟通过时钟信号线或数据选通信号线发送的信号。 因此,时钟或数据选通信号采取适合在目的地检索的相位,使得可以通过接收的时钟或接收的数据选通信号直接检索数据信号。

    Word driver circuit and a memory circuit using the same
    10.
    发明授权
    Word driver circuit and a memory circuit using the same 失效
    字驱动电路和使用其的存储电路

    公开(公告)号:US5640359A

    公开(公告)日:1997-06-17

    申请号:US686385

    申请日:1996-07-25

    CPC分类号: G11C8/14 G11C8/08

    摘要: The present invention relates to a word driver circuit provided in a memory circuit. The word driver circuit comprises a P channel and an N channel transistor having a gate electrode commonly connected and one source or drain electrode commonly connected. The N channeltransistor has another source or drain electrode connected to a ground. A word line is connected to the commonly connected source or drain electrode of the transistors. A first selection signal, generated by decoding a first group of address signals, whose potential is either a first potential by which the N channel transistor is rendered conductive or a second potential lower than the first power supply is supplied to the gate electrodes. And a second selection signal, generated by decoding a second group of address signals, whose potential is either a third potential of the selected word line or a fourth potential equal or lower than the first power supply is supplied to another source or drain of the P transistor.

    摘要翻译: 本发明涉及一种设在存储器电路中的字驱动器电路。 字驱动器电路包括P沟道和N沟道晶体管,其具有共同连接的栅极电极和通常连接的一个源极或漏极电极。 N沟道晶体管具有连接到地的另一个源极或漏极。 字线连接到晶体管的共同连接的源极或漏极。 通过解码第一组地址信号而产生的第一选择信号被提供给栅极电极,该第一组地址信号的电位是N沟道晶体管导通的第一电位或低于第一电源的第二电位。 并且通过解码第二组地址信号而产生的第二选择信号被提供给P的另一个源或漏极,该第二组地址信号的电位是所选字线的第三电位或等于或低于第一电源的第四电位 晶体管。