摘要:
In a semiconductor memory device operable in synchronism with a clock signal externally supplied thereto, there are provided a first part which detects a state of a predetermined signal after a given command is input to the semiconductor memory; and a second part which sets, on the basis of the state of the predetermined signal, the semiconductor memory device to a self-refresh mode in which a refresh operation is carried out without an external signal.
摘要:
A semiconductor system includes at least one logic chip and at least one memory chip arranged such that one side of the at least one memory chip faces one side of the at least one logic chip. The semiconductor system further includes first input/output nodes, provided for the at least one logic chip, for data transfer with an adjacent memory chip, second input/output nodes, provided for the at least one memory chip, for data transfer with an adjacent logic chip, and a package housing the at least one logic chip and the at least one memory chip, wherein the first input/output nodes are arranged along the one side of the at least one logic chip, and the second input/output nodes are arranged along the one side of the at least one memory chip.
摘要:
A memory system having a simple configuration capable of high-speed data transmission is disclosed. Data is output from a controller or a memory in synchronism with a clock or a data strobe signal. The clock or the data strobe signal is transmitted by a clock signal line or a data strobe signal line, respectively, arranged in parallel to a data signal line. A delay circuit delays by a predetermined time the signals transmitted through the clock signal line or the data strobe signal line. The clock or the data strobe signal thus assumes a phase suitable for retrieval at the destination, so that the data signal can be retrieved directly by means of the received clock or the received data strobe signal.
摘要:
A semiconductor memory device includes memory cells, word lines connected to the memory cells, bit lines connected to the memory cells, and a first circuit which resets the bit lines to a reset potential which is based on data read in a previous read cycle.
摘要:
A system and a semiconductor device for realizing such a system are disclosed. The system uses at least a semiconductor device for retrieving an input signal in synchronism with an internal clock generated from an external clock, the input signal remaining effectively in synchronism with the external clock. Even in the case where a phase difference develops between a clock and a signal at the receiving end, or even in the case where a phase difference develops between a clock input circuit and other signal input circuits in the semiconductor device at the receiving end, data can be transferred at high speed. Each input circuit of the semiconductor device at the receiving end includes an input timing adjusting circuit for adjusting the phase of the clock applied to the input circuit in such a manner that the input circuit retrieves the input signal in an effective and stable state. In the case where the skew between the input signals is small as compared with the skew between the input signals and the clock, an input timing adjusting circuit is shared by a plurality of the input circuits.
摘要:
A semiconductor wafer testing method includes a pre-test step for forming a temporary test film on a surface of a semiconductor wafer, a test step for testing the semiconductor wafer by applying a probe to the temporary test film and a post-test step for exfoliating the temporary test film from the surface of the semiconductor wafer. The temporary test film includes test electrode groups each provided with a plurality of regularly arranged test electrodes, and wiring patterns for electrically connecting the test electrodes with corresponding ones of semiconductor unit electrodes in respective semiconductor units on the semiconductor wafer. Probe pins of said probe are arranged so as to be aligned with corresponding ones of the test electrodes of the respective test electrode groups.
摘要:
Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock. The output timing control circuit includes a delay circuit for delaying the reference signal by a specified magnitude and generating an output timing signal, a phase comparison circuit for comparing the phase of the output timing signal with the phase of the reference signal, and a delay control circuit for specifying the magnitude of a delay to be produced by the delay circuit according to the result of comparison performed by the phase comparison circuit.
摘要:
Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock. The output timing control circuit includes a delay circuit for delaying the reference signal by a specified magnitude and generating an output timing signal, a phase comparison circuit for comparing the phase of the output timing signal with the phase of the reference signal, and a delay control circuit for specifying the magnitude of a delay to be produced by the delay circuit according to the result of comparison performed by the phase comparison circuit.
摘要:
Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock. The output timing control circuit includes a delay circuit for delaying the reference signal by a specified magnitude and generating an output timing signal, a phase comparison circuit for comparing the phase of the output timing signal with the phase of the reference signal, and a delay control circuit for specifying the magnitude of a delay to be produced by the delay circuit according to the result of comparison performed by the phase comparison circuit.
摘要:
The present invention relates to a word driver circuit provided in a memory circuit. The word driver circuit comprises a P channel and an N channel transistor having a gate electrode commonly connected and one source or drain electrode commonly connected. The N channeltransistor has another source or drain electrode connected to a ground. A word line is connected to the commonly connected source or drain electrode of the transistors. A first selection signal, generated by decoding a first group of address signals, whose potential is either a first potential by which the N channel transistor is rendered conductive or a second potential lower than the first power supply is supplied to the gate electrodes. And a second selection signal, generated by decoding a second group of address signals, whose potential is either a third potential of the selected word line or a fourth potential equal or lower than the first power supply is supplied to another source or drain of the P transistor.