摘要:
A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.
摘要:
A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.
摘要:
There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a joint comprising a phase of Al particles and another phase of a Al—Mg—Ge—Zn alloy, said Al particles being connected to each other by said Al—Mg—Ge—Zn alloy phase.
摘要:
An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0˜2.0 mass %, In: 0.1˜10 mass %, and Sn: remaining amount.
摘要:
An electronic equipment is capable of improving falling down shock resistance or impact resistance in an electronic equipment and of improving reliability of a solder joint in a semiconductor device die-bonded Si chip or the like to which thermal shock causing large deformation may act, bump mounting of BGA, CSP, WPP, flip-chip and so forth, a power module acting large stress and so forth. The electronic equipment has a circuit board and an electronic parts to be electrically connected to an electrode of the circuit board. The electrode of the circuit board and an electrode of the electronic part are connected by soldering using a lead free solder consisted of Cu: 0-2.0 mass %, In: 0.1-10 mass %, and Sn: remaining amount.
摘要:
This invention relates to a packaging method using lead-free solder, characterized by including a reflow-soldering step in which a surface mount device is soldered to a circuit board with a lead-free solder paste; an inserting step in which the lead or terminal of a insertion mount device is inserted into the circuit board; a step in which a warp preventing jig is attached to the circuit board; a flux applying step in which flux is applied to the foregoing circuit board; a preheating step in which, after applying flux, the lower surface of the circuit board is preheated; a flow-soldering step in which the upper surface of the circuit board the lower surface of which was preheated in the preheating step is heated, and by applying lead-free solder paste to the lower surface of the circuit board, the lead or terminal of the insertion mount device is flow-soldered to the circuit board; and a temperature controlling step where temperatures of both surfaces of a circuit board are adjusted, the upper surface of the circuit board is cooled or heated and the lower surface of the said circuit board is cooled, immediately after soldering in the flow-soldering step.
摘要:
The present invention relates to a wave soldering method and a wave soldering apparatus using lead-free solder comprising a wave soldering step in which the lower side of a substrate with leads of component parts inserted in through-holes formed in the substrate from the upper side is wave soldered by contact with a molten lead-free solder blowout at a wave soldering portion provided in a chamber, and a cooling step in which an inert gas in the chamber is recirculated and cooled and is blown to the lower side of the substrate wave soldered with the lead-free solder in the wave soldering step and being conveyed, to cool the lower side of the substrate, at a blowing portion provided adjacently to the wave soldering portion in the chamber, and an apparatus therefor.
摘要:
A packaging method using lead-free solder, characterized by including a reflow-soldering step in which a surface mount device is soldered to a circuit board with a lead-free solder paste; an inserting step in which the lead or terminal of a insertion mount device is inserted into the circuit board; a step in which a warp preventing jig is attached to the circuit board; a flux applying step in which flux is applied to the foregoing circuit board; a preheating step in which, after applying flux, the lower surface of the circuit board is preheated; a flow-soldering step in which the upper surface of the circuit board the lower surface of which was preheated in the preheating step is heated, and by applying lead-free solder paste to the lower surface of the circuit board, the lead or terminal of the insertion mount device is flow-soldered to the circuit board; and a temperature controlling step where temperatures of both surfaces of a circuit board are adjusted, the upper surface of the circuit board is cooled or heated and the lower surface of the circuit board is cooled, immediately after soldering in the flow-soldering step.
摘要:
Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.
摘要:
Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.