公开(公告)号：US20100167522A1

公开(公告)日：2010-07-01

申请号：US12344802

申请日：2008-12-29

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothty D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothty D. SULLIVAN

IPC分类号： H01L21/44

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming a plurality of trenches in a dielectric layer extending to an underlying metal layer. The method further includes depositing metal in the plurality of trenches to form discrete metal line islands in contact with the underlying metal layer. The method also includes forming a solder bump in electrical connection to the plurality of metal line islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在延伸到下面的金属层的电介质层中形成多个沟槽。 该方法还包括在多个沟槽中沉积金属以形成与下面的金属层接触的离散金属线岛。 该方法还包括形成与多个金属线岛电连接的焊料凸块。

公开(公告)号：US20130269974A1

公开(公告)日：2013-10-17

申请号：US13444343

申请日：2012-04-11

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01B3/30 ,  H01B13/00 ,  H01B13/06 ,  H01B7/00

CPC分类号： H01L24/05 ,  H01B3/306 ,  H01B3/307 ,  H01L21/02118 ,  H01L21/76877 ,  H01L24/03 ,  H01L2224/02166 ,  H01L2224/03462 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/48

摘要： Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The method further includes forming a protective layer over the organic insulator layer. The method further includes forming a via in the organic insulator layer over the metal wiring layer. The method further includes depositing a metal layer in the via and on the protective layer. The method further includes patterning the metal layer with an etch chemistry that is damaging to the organic insulator layer.

公开(公告)号：US20110031616A1

公开(公告)日：2011-02-10

申请号：US12908554

申请日：2010-10-20

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/498

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming a plurality of trenches in a dielectric layer extending to an underlying metal layer. The method further includes depositing metal in the plurality of trenches to form discrete metal line islands in contact with the underlying metal layer. The method also includes forming a solder bump in electrical connection to the plurality of metal line islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在延伸到下面的金属层的电介质层中形成多个沟槽。 该方法还包括在多个沟槽中沉积金属以形成与下面的金属层接触的离散金属线岛。 该方法还包括形成与多个金属线岛电连接的焊料凸块。

公开(公告)号：US20100065965A1

公开(公告)日：2010-03-18

申请号：US12624065

申请日：2009-11-23

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method comprises depositing a first metal containing layer into a trench structure, which contacts a metalized area of a semiconductor structure. The method further includes patterning at least one opening in a resist to the first metal containing layer. The opening should be in alignment with the trench structure. At least a pad metal containing layer is formed within the at least one opening (preferably by electroplating processes). The resist and the first metal layer underlying the resist are then etched (with the second metal layer acting as a mask, in embodiments). The method includes flowing solder material within the trench and on pad metal containing layer after the etching process. The structure is a controlled collapse chip connection (C4) structure comprising at least one electroplated metal layer formed in a resist pattern to form at least one ball limiting metallurgical layer. The structure further includes an underlying metal layer devoid of undercuts.

摘要翻译： 一种方法包括将第一含金属层沉积到与半导体结构的金属化区域接触的沟槽结构中。 该方法还包括将抗蚀剂中的至少一个开口图案化为第一含金属层。 开口应与沟槽结构对齐。 在至少一个开口内（优选通过电镀工艺）形成至少一垫层金属层。 然后蚀刻抗蚀剂和抗蚀剂下面的第一金属层（在实施例中第二金属层用作掩模）。 该方法包括在蚀刻工艺之后使沟槽内的焊料材料和含焊垫金属的层流动。 该结构是受控的崩溃芯片连接（C4）结构，包括至少一个以抗蚀剂图案形成的电镀金属层，以形成至少一个球限制冶金层。 该结构还包括没有底切的底层金属层。

公开(公告)号：US20140061933A1

公开(公告)日：2014-03-06

申请号：US13604878

申请日：2012-09-06

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER

IPC分类号： H01L21/768 ,  H01L23/49

CPC分类号： H01L23/481 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/061 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A splash containment structure for semiconductor structures and associated methods of manufacture are provided. A method includes: forming wire bond pads in an integrated circuit chip and forming at least one passivation layer on the chip. The at least one passivation layer includes first areas having a first thickness and second areas having a second thickness. The second thickness is greater than the first thickness. The first areas having the first thickness extend over a majority of the chip. The second areas having the second thickness are adjacent the wire bond pads.

摘要翻译： 提供了一种用于半导体结构和相关制造方法的防溅结构。 一种方法包括：在集成电路芯片中形成引线接合焊盘并在芯片上形成至少一个钝化层。 至少一个钝化层包括具有第一厚度的第一区域和具有第二厚度的第二区域。 第二厚度大于第一厚度。 具有第一厚度的第一区域延伸超过芯片的大部分。 具有第二厚度的第二区域与引线接合焊盘相邻。

公开(公告)号：US20120280399A1

公开(公告)日：2012-11-08

申请号：US13098816

申请日：2011-05-02

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02126 ,  H01L2224/02141 ,  H01L2224/02145 ,  H01L2224/0401 ,  H01L2224/05018 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05664 ,  H01L2224/061 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/141 ,  H01L2224/14104 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552

摘要： Structures are provided with raised buffer pads for solder bumps. Methods are also provided for forming the raised buffer pads for solder bumps. The method includes forming a raised localized buffer pad structure on a tensile side of a last metal layer of a solder bump connection. The raised localized buffer pad structure increases a height of a portion of a pad structure of the solder bump connection with respect to a compressive side of the last metal layer.

摘要翻译： 结构提供有用于焊料凸块的凸起缓冲垫。 还提供了用于形成用于焊料凸块的凸起缓冲垫的方法。 该方法包括在焊料凸块连接的最后金属层的拉伸侧上形成升高的局部缓冲垫结构。 凸起的局部缓冲垫结构相对于最后一个金属层的压缩侧增加焊料凸块连接的焊盘结构的一部分的高度。

公开(公告)号：US20100164104A1

公开(公告)日：2010-07-01

申请号：US12344774

申请日：2008-12-29

申请人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

发明人： Timothy H. DAUBENSPECK ,  Jeffrey P. GAMBINO ,  Christopher D. MUZZY ,  Wolfgang SAUTER ,  Timothy D. SULLIVAN

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05088 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.

摘要翻译： 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该方法包括在电介质层中形成上布线层，并在上布线层上淀积一层或多层介电层。 该方法还包括在延伸到上布线层的一个或多个电介质层中形成多个离散的沟槽。 该方法还包括在多个离散的沟槽中沉积限制极限的冶金或凸块下的冶金，以形成与上部绞合层接触的离散的金属岛。 形成与多个离散金属岛电连接的焊料凸块。

公开(公告)号：US20130146846A1

公开(公告)日：2013-06-13

申请号：US13324246

申请日：2011-12-13

申请人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH

发明人： James W. ADKISSON ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Molly J. LEITCH

IPC分类号： H01L29/78 ,  H01L21/336 ,  B82Y99/00

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L27/1222 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

摘要： Manufacturing a semiconductor structure including: forming a seed material on a sidewall of a mandrel; forming a graphene field effect transistor (FET) on the seed material; and removing the seed material.

摘要翻译： 制造半导体结构，包括：在心轴的侧壁上形成种子材料; 在种子材料上形成石墨烯场效应晶体管（FET）; 并移除种子材料。

公开(公告)号：US20130119440A1

公开(公告)日：2013-05-16

申请号：US13293795

申请日：2011-11-10

申请人： Kristin M. ACKERSON ,  John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Yen L. LIM

发明人： Kristin M. ACKERSON ,  John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Yen L. LIM

IPC分类号： H01L29/772 ,  H01L21/335

CPC分类号： G01N27/4145 ,  H01L29/772

摘要： A biosensor with a microfluidic structure surrounded by an electrode and methods of forming the electrode around the microfluidic structure of the biosensor are provided. A method includes forming a gate or electrode in a first layer. The method further includes forming a trench in a second layer. The method further includes forming a first metal layer in the trench such that the first metal layer is in electrical contact with the gate or the electrode. The method further includes forming a sacrificial material in the trench. The method further includes forming a second metal layer over the sacrificial material and in contact with the first metal layer. The method further includes removing the sacrificial material such that a microfluidic channel is formed surrounded by the first and the second metal layers.

摘要翻译： 提供了由电极包围的微流体结构的生物传感器和围绕生物传感器的微流体结构形成电极的方法。 一种方法包括在第一层中形成栅极或电极。 该方法还包括在第二层中形成沟槽。 该方法还包括在沟槽中形成第一金属层，使得第一金属层与栅极或电极电接触。 该方法还包括在沟槽中形成牺牲材料。 该方法还包括在牺牲材料上形成第二金属层并与第一金属层接触。 该方法还包括去除牺牲材料，使得由第一和第二金属层围绕的微流体通道形成。

公开(公告)号：US20120319237A1

公开(公告)日：2012-12-20

申请号：US13163922

申请日：2011-06-20

申请人： Edward C. COONEY, III ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Thomas L. MCDEVITT ,  Gary L. MILO

发明人： Edward C. COONEY, III ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Thomas L. MCDEVITT ,  Gary L. MILO

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L23/528 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： Corner-rounded structures and methods of manufacture are provided. The method includes forming at least two conductive wires with rounded corners on a substrate. The method further includes forming a insulator film on the substrate and between the at least two conductive wires with the rounded corners.

摘要翻译： 提供了圆角结构和制造方法。 该方法包括在基底上形成具有圆角的至少两根导线。 所述方法还包括在所述基板上和所述至少两个具有圆角的导线之间形成绝缘膜。